公开(公告)号：US20240176230A1

公开(公告)日：2024-05-30

申请号：US18462796

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hachul Shin ,  Dohyung Kim ,  Jooon Park ,  Sanghwan Lee ,  Seongchul Hong

IPC: G03F1/70

CPC classification number: G03F1/70

Abstract: There is provided an extreme ultraviolet (EUV) overlay correcting method capable of effectively correcting an overlay error in an EUV exposure process and a method of manufacturing a semiconductor device including the same. The EUV overlay correcting method includes forming a first photoresist (PR) pattern on a wafer by performing an EUV exposure process using a reticle, inspecting an EUV overlay for the first PR pattern and obtaining a first overlay for a first overlay parameter in which an overlay three-dimensionally increases away from a center to opposing sides of the first PR pattern in a first direction perpendicular to a scan direction, calculating deformation data of the reticle based on the first overlay, applying a voltage to a clamp electrode of a reticle stage to create the reticle into a deformed reticle, and forming a second PR pattern on the wafer by performing an EUV exposure process using the deformed reticle.