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公开(公告)号：US20240251496A1
公开(公告)日：2024-07-25
申请号：US18628152
申请日：2024-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dohyung Kim , Seongchul Hong , Insung Kim , Jinhong Park , Jungchul Lee
IPC: H05G2/00 , G03F7/00 , H01L21/268
CPC classification number: H05G2/008 , H01L21/268 , G03F7/70033
Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.
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公开(公告)号：US20250139762A1
公开(公告)日：2025-05-01
申请号：US18890365
申请日：2024-09-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunchul KIM , Daewoong Choi , Ohchel Kwon , Hyunmo Kang , Taecheon Kim , Jinhong Park , Wooseok Choe
Abstract: A wafer inspection method includes: obtaining an inspection image by capturing an image of a wafer and an identification tag; obtaining an inspection profile by quantifying the identification tag in the inspection image; and performing a surface inspection of the wafer based on the obtained inspection profile.
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公开(公告)号：US12185450B2
公开(公告)日：2024-12-31
申请号：US18628152
申请日：2024-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dohyung Kim , Seongchul Hong , Insung Kim , Jinhong Park , Jungchul Lee
IPC: H05G2/00 , G03F7/00 , H01L21/268
Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.
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4.发明申请公开(公告)号：US20200348599A1
公开(公告)日：2020-11-05
申请号：US16676588
申请日：2019-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunhee Bai , Jinhong Park , Jinseok Heo , Seungmin Lee , Suntaek Lim
IPC: G03F7/20 , H01L21/268
Abstract: Disclosed are a system for fabricating a semiconductor device and a method of fabricating a semiconductor device. The system may include a chamber, an extreme ultraviolet (EUV) source in the chamber and configured to generate an EUV beam, an optical system on the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a particle collector between the reticle and the optical system and configured to allow for a selective transmission of the EUV beam and to remove a particle.
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公开(公告)号：US11908807B2
公开(公告)日：2024-02-20
申请号：US17574212
申请日：2022-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Huichul Shin , Hyungjin Lee , Jinhong Park , Mingeun Song , Euiyoung Jeong , Hiroki Fujii
IPC: H01L23/552 , H01L21/82 , H01L21/78
CPC classification number: H01L23/552
Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.
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Patent Agency Ranking
公开(公告)号：US11922298B2
公开(公告)日：2024-03-05
申请号：US16858823
申请日：2020-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinhong Park , Sungjun Kim , Keun Heo , Hyeongjun Kim , Seyong Oh
Abstract: A neuron device is described. The neuron device is based on spontaneous polarization switching which includes a plurality of gate electrodes, a plurality of drain electrodes, a plurality of source lines, a dielectric layer, and a semiconductor layer. The gate electrodes are arranged parallel to each other. The drain electrodes are arranged parallel to each other. The source lines are arranged between the gate electrodes and the drain electrodes and parallel to each other. The dielectric layer is formed at intersections between the gate electrodes and the source lines. The semiconductor layer is formed at intersections between the drain electrodes and the source electrodes. The drain electrodes function as synapse-after-neuron linking terminals. The gate electrodes adjust an arrangement direction of electrical dipoles of the dielectric layer to control a firing time point and a firing height of the neuron device.
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公开(公告)号：US10754254B1
公开(公告)日：2020-08-25
申请号：US16678274
申请日：2019-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunhee Bai , Jinhong Park , Jinseok Heo , Heeyoung Go , Seongchul Hong
Abstract: An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.
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公开(公告)号：US11979973B2
公开(公告)日：2024-05-07
申请号：US17163945
申请日：2021-02-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dohyung Kim , Seongchul Hong , Insung Kim , Jinhong Park , Jungchul Lee
IPC: H05G2/00 , G03F7/00 , H01L21/268
CPC classification number: H05G2/008 , H01L21/268 , G03F7/70033
Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.
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公开(公告)号：US20240080044A1
公开(公告)日：2024-03-07
申请号：US18461120
申请日：2023-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taesun Kim , Jinhong Park , Hwisoo So , Kyoungwoo Lee , Jinhyo Jung
IPC: H03M13/11
CPC classification number: H03M13/1111
Abstract: The method of detecting a soft error includes copying, in a program loaded into a memory, an original branch command to a copied branch command, executing, by a processor, a first command set comprising the copied branch command, executing, by a processor, a second command set comprising the original branch command, and determining, by a soft error detection circuit, whether an error exists in the execution of the original branch command based on the execution result of the first command set and the second command set.
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公开(公告)号：US20210385932A1
公开(公告)日：2021-12-09
申请号：US17163945
申请日：2021-02-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dohyung Kim , Seongchul Hong , Insung Kim , Jinhong Park , Jungchul Lee
IPC: H05G2/00 , H01L21/268
Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.
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