SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20240389365A1

    公开(公告)日:2024-11-21

    申请号:US18786162

    申请日:2024-07-26

    Abstract: A semiconductor device includes a first semiconductor structure including a first substrate, circuit devices disposed on the first substrate, and first metal bonding layers disposed on the circuit devices, and a second semiconductor structure including gate electrodes spaced apart from each other and stacked in a first direction, perpendicular to upper surfaces of the first metal bonding layers, channel structures passing through the gate electrodes, extending in the first direction, and respectively including a channel layer, second metal bonding layers disposed below the channel structures and the gate electrodes and connected to the first metal bonding layers, bit lines disposed below the channel structures, extending in a second direction, perpendicular to the first direction, and spaced apart from each other, and source lines disposed on the channel structures, extending in a third direction, perpendicular to the second direction, and spaced apart from each other. The channel structures are respectively disposed in intersection regions in which the bit lines and the source lines intersect each other.

    STANDARD CELL AND INTEGRATED CIRCUIT INCLUDING THE SAME

    公开(公告)号:US20230077532A1

    公开(公告)日:2023-03-16

    申请号:US17946761

    申请日:2022-09-16

    Abstract: A standard cell and an integrated circuit including the same are is provided. The standard cell is provided in first and second rows. The standard cell includes: a first circuit region provided in the first row and including a plurality of first transistors; a second circuit region provided in the second row and including a plurality of second transistors; a first input pin provided in the first circuit region and configured to receive a first input signal; and a second input pin provided in the second circuit region and configured to receive a second input signal. The first input signal is input to gate terminals of each of the plurality of first transistors, and the second input signal is input to gate terminals of each of the plurality of second transistors. The first circuit region is symmetric with respect to a second horizontal direction and the second circuit region is symmetric with respect to the second horizontal direction.

    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

    公开(公告)号:US20230005949A1

    公开(公告)日:2023-01-05

    申请号:US17720453

    申请日:2022-04-14

    Abstract: A semiconductor device includes a first structure including a peripheral circuit and a second structure on the first structure. The second structure includes: a stack structure including first and second stack structures; separation structures passing through the first stack structure; a memory vertical structure between the separation structures and passing through the first stack structure; and a capacitor including first and second capacitor electrodes passing through the second stack structure and extending parallel to each other. The first stack structure includes spaced apart gate electrodes and interlayer insulating layers alternately stacked therewith. The second stack structure includes spaced apart first insulating layers, and second insulating layers alternately stacked therewith. Each of the first and second capacitor electrodes has a linear shape. The first and second insulating layers include a different material from each other. The second insulating layers include the same material as the interlayer insulating layers.

    Display device
    7.
    发明授权

    公开(公告)号:US12237439B2

    公开(公告)日:2025-02-25

    申请号:US17238163

    申请日:2021-04-22

    Abstract: A display device with improved light-emitting efficiency is disclosed. The display device includes a plurality of pixels, a light emitting device provided in each of the pixels, the light emitting device having first and second surfaces which are opposite to each other, first and second electrodes electrically and respectively connected to the first and second surfaces of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern includes first and second regions. The first region encloses the second region, and the second region has a contact hole exposing at least a portion of the second surface. The second electrode is coupled to the second surface through the contact hole, and the first and second regions have crystalline phases different from each other.

    Refrigerator
    8.
    发明授权

    公开(公告)号:US12196482B2

    公开(公告)日:2025-01-14

    申请号:US17860324

    申请日:2022-07-08

    Abstract: A refrigerator includes: an inner case including a plurality of plates formed by injection-molding; an outer case couplable with an exterior of the inner case; and an insulation between the inner case and the outer case. A first plate of the plurality of plates includes a first coupling portion formed along an edge of the first plate, and a second plate of the plurality of plates includes a second coupling portion formed along an edge of the second plate and couplable with the first coupling portion. The first coupling portion includes an insertion protrusion. The second coupling portion includes: an accommodating portion forming an accommodating groove in which the insertion protrusion is inserted; and a catching portion configured to prevent the insertion protrusion from departing from the accommodating groove; and an inner rib protruding from an inner surface of the accommodating portion to be inserted in the insertion groove.

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