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公开(公告)号：US09257485B2
公开(公告)日：2016-02-09
申请号：US14192371
申请日：2014-02-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-bae Kim , Kyung-min Kim , Sung-ho Kim , Seung-ryul Lee , Man Chang , Eun-ju Cho , Sae-jin Kim , Chang-jung Kim
CPC classification number: H01L27/2481 , H01L27/2409 , H01L27/2436 , H01L27/249 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.
Abstract translation: 存储器件可以包括与第一电极间隔开的第一电极和第二电极。 存储器件还可以包括设置在第一电极和第二电极之间的存储元件和设置在第一电极和第二电极之间的开关元件。 开关元件可以被配置为控制对存储器元件的信号访问。 存储器件还可以包括设置在存储器元件和开关元件之间的阻挡层，阻挡层包括绝缘材料。
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Patent Agency Ranking
公开(公告)号：US20240321690A1
公开(公告)日：2024-09-26
申请号：US18492946
申请日：2023-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngbin Lee , Man Chang
IPC: H01L23/48 , H01L21/768 , H01L23/522
CPC classification number: H01L23/481 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L23/5226 , H01L27/088
Abstract: An integrated circuit device includes a substrate, an insulating structure on a frontside surface of the substrate, a contact structure including a first plug portion that extends through the substrate, and a self-assembled organic material insulating liner between the first plug portion and the substrate.
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3.发明授权Resistive memory device, resistive memory system, and operating method thereof 有权电阻式存储器件，电阻式存储器系统及其操作方法公开(公告)号：US09514813B2
公开(公告)日：2016-12-06
申请号：US14724909
申请日：2015-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong-kyu Lee , Yeong-taek Lee , Dae-seok Byeon , In-gyu Baek , Man Chang , Lijie Zhang
CPC classification number: G11C13/0069 , G11C7/04 , G11C11/1659 , G11C11/1675 , G11C13/0097 , G11C2013/0073 , G11C2013/0088 , G11C2013/0092
Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.
Abstract translation: 一种用于操作存储器件的方法包括：感测电阻性存储器件的温度，根据温度设置用于写入存储器单元的设定电压或电流的电平，设置用于复位写入的复位电压的电平到存储器 基于温度，并且基于设定电压或电流的电平以及复位电压的电平对存储器单元执行写入操作。 存储器件可以是电阻式存储器件。
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公开(公告)号：US09153778B2
公开(公告)日：2015-10-06
申请号：US13867411
申请日：2013-04-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-min Kim , Young-bae Kim , Chang-jung Kim , Seung-ryul Lee , Man Chang , Sung-ho Kim , Eun-ju Cho
CPC classification number: H01L45/146 , G11C13/0007 , G11C13/0069 , G11C2213/32 , G11C2213/51 , G11C2213/55 , H01L27/2463 , H01L45/08 , H01L45/1233
Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.
Abstract translation: 电阻式开关器件包括在第一电极和第二电极之间的第一材料层。 第一材料层具有平行于第一区域的第一区域和第二区域。 第一区域对应于形成在第一材料层中的导电路径，并且被配置为响应于大于或等于第一电压的施加电压从低电阻状态切换到高电阻状态。 第二区域被配置为当施加的电压大于或等于第二电压时，切换到低于高电阻状态下的第一区域的电阻值的第一电阻值。 当第二区域具有第一电阻值时，第一区域保持恒定或基本恒定。
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公开(公告)号：US09728252B2
公开(公告)日：2017-08-08
申请号：US14796131
申请日：2015-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong-kyu Lee , Yeong-taek Lee , Dae-seok Byeon , In-gyu Baek , Man Chang , Lijie Zhang , Hyun-kook Park
CPC classification number: G11C13/004 , G11C7/04 , G11C11/1673 , G11C11/5607 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0064 , G11C2013/0054
Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.
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公开(公告)号：US09633727B2
公开(公告)日：2017-04-25
申请号：US14830377
申请日：2015-08-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Man Chang , In-gyu Baek , Sang-heon Lee , Hyun-sang Hwang
CPC classification number: G11C13/0069 , G11C11/5678 , G11C11/5685 , G11C13/0064 , G11C2013/0092
Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.
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