公开(公告)号：US12274085B2

公开(公告)日：2025-04-08

申请号：US17354605

申请日：2021-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Dong Won Kim ,  Geum Jong Bae ,  Kwan Young Chun

IPC: H10D30/67 ,  H10B10/00 ,  H10D62/10 ,  H10D84/85

Abstract: A semiconductor device is provided. The semiconductor device includes: a first wire pattern disposed on a substrate and extending in a first direction; a first gate electrode surrounding the first wire pattern and extending in a second direction, the first direction intersecting the second direction perpendicularly; a first transistor including the first wire pattern and the first gate electrode; a second wire pattern disposed on the substrate and extending in the first direction; a second gate electrode surrounding the second wire pattern and extending in the second direction; and a second transistor including the second wire pattern and the second gate electrode, wherein a width of the first wire pattern in the second direction is different from a width of the second wire pattern in the second direction.

公开(公告)号：US20230361036A1

公开(公告)日：2023-11-09

申请号：US18140356

申请日：2023-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung Ju KANG ,  Kwan Young Chun ,  Ji Wook Kwon ,  Chul Hong Park ,  Azmat Raheel ,  Suhyeong Choi

IPC: H01L23/528 ,  H01L23/48

CPC classification number: H01L23/5286 ,  H01L23/481

Abstract: A semiconductor device includes a substrate including a first side and a second side opposite to the first side, a first power rail and a second power rail provided on the first side of the substrate, the first power rail and the second power rail extending in a first direction and being separated in a second direction, a first active region and a second active region provided on the first side of the substrate, the first active region and the second active region being defined by an element separation film between the first power rail and the second power rail and being separated in the second direction, a power delivery network provided on the second side of the substrate, and a first power through via penetrating the element separation film and the substrate, the first power through via connecting the power delivery network and the first power rail.

公开(公告)号：US11205645B2

公开(公告)日：2021-12-21

申请号：US16800070

申请日：2020-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Jeong ,  Kwan Young Chun

IPC: H01L21/00 ,  H01L27/02 ,  H01L27/092 ,  H01L23/535 ,  H01L23/522 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.

公开(公告)号：US11069818B2

公开(公告)日：2021-07-20

申请号：US16435657

申请日：2019-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Dong Won Kim ,  Geum Jong Bae ,  Kwan Young Chun

IPC: H01L29/786 ,  H01L27/092 ,  H01L27/11 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor device is provided. The semiconductor device includes: a first wire pattern disposed on a substrate and extending in a first direction; a first gate electrode surrounding the first wire pattern and extending in a second direction, the first direction intersecting the second direction perpendicularly; a first transistor including the first wire pattern and the first gate electrode; a second wire pattern disposed on the substrate and extending in the first direction; a second gate electrode surrounding the second wire pattern and extending in the second direction; and a second transistor including the second wire pattern and the second gate electrode, wherein a width of the first wire pattern in the second direction is different from a width of the second wire pattern in the second direction.

公开(公告)号：US10573634B2

公开(公告)日：2020-02-25

申请号：US15870072

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Jeong ,  Kwan Young Chun

IPC: H01L21/00 ,  H01L27/02 ,  H01L27/092 ,  H01L23/535 ,  H01L23/522 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.

公开(公告)号：US10546855B2

公开(公告)日：2020-01-28

申请号：US15473913

申请日：2017-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rajeev Ranjan ,  Deepak Sharma ,  Subhash Kuchanuri ,  Chul Hong Park ,  Jae Seok Yang ,  Kwan Young Chun

IPC: H01L27/088 ,  H01L23/528 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L23/522

Abstract: Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.

公开(公告)号：US20180358347A1

公开(公告)日：2018-12-13

申请号：US15870072

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Jeong ,  Kwan Young Chun

IPC: H01L27/02 ,  H01L27/092 ,  H01L23/522 ,  H01L23/535

Abstract: A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.

公开(公告)号：US20230282703A1

公开(公告)日：2023-09-07

申请号：US17894269

申请日：2022-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun KIM ,  Jin Beom Park ,  Kwan Young Chun

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/0673 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/775

Abstract: A semiconductor device is provided. The semiconductor device includes a lower substrate; a lower active pattern which extends in a first direction on the lower substrate; a first lower gate electrode which extends in a second direction on the lower active pattern; an upper substrate on the first lower gate electrode; an upper active pattern which extends in the first direction on the upper substrate, wherein the upper active pattern is spaced apart from the lower active pattern in each of the second direction and a vertical direction; a first upper gate electrode which extends in the second horizontal direction on the upper active pattern, wherein the first upper gate electrode at least partially overlaps the first lower gate electrode in the vertical direction; and a first gate contact which is spaced apart from the first upper gate electrode in the second horizontal direction.

公开(公告)号：US10699998B2

公开(公告)日：2020-06-30

申请号：US15936882

申请日：2018-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sidharth Rastogi ,  Subhash Kuchanuri ,  Jae Seok Yang ,  Kwan Young Chun

IPC: H01L23/522 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends. An upper surface of the insulator is higher than an upper surface of the first fin pattern and an upper surface of the second fin pattern.

公开(公告)号：US10304819B2

公开(公告)日：2019-05-28

申请号：US15838840

申请日：2017-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jin Kim ,  Kwan Young Chun

IPC: H01L27/02 ,  H01L29/66 ,  H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L21/8234

Abstract: A semiconductor device includes a cell region that includes a first active region and a second active region extending in a first direction and a separation region between the first active region and the second active region. The cell region has a first width. A first gate structure and a second gate structure are disposed on the cell region, are spaced apart from each other in the first direction, and extend in the second direction. A first metal line and a second metal line are disposed on the cell region, extend in the first direction, and are spaced apart from each other by a first pitch. Each of the first and second metal lines has a second width. A first gate contact electrically connects the first gate structure and the first metal line. At least a portion of the first gate contact overlaps the separation region. A second gate contact electrically connects the second gate structure and the second metal line. At least a portion of the second gate contact overlaps the separation region. The first width divided by a sum of the first pitch and the second width is six or less.