公开(公告)号：US10573634B2

公开(公告)日：2020-02-25

申请号：US15870072

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Jeong ,  Kwan Young Chun

IPC: H01L21/00 ,  H01L27/02 ,  H01L27/092 ,  H01L23/535 ,  H01L23/522 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.

公开(公告)号：US20180358347A1

公开(公告)日：2018-12-13

申请号：US15870072

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Jeong ,  Kwan Young Chun

IPC: H01L27/02 ,  H01L27/092 ,  H01L23/522 ,  H01L23/535

Abstract: A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.

公开(公告)号：US11205645B2

公开(公告)日：2021-12-21

申请号：US16800070

申请日：2020-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Jeong ,  Kwan Young Chun

IPC: H01L21/00 ,  H01L27/02 ,  H01L27/092 ,  H01L23/535 ,  H01L23/522 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.