公开(公告)号：US11877508B2

公开(公告)日：2024-01-16

申请号：US18169541

申请日：2023-02-15

Applicant: DUK SAN NEOLUX CO., LTD. ,  SAMSUNG DISPLAY CO., LTD.

Inventor： Ki Won Kim ,  Kyung Hwan Oh ,  Bu Yong Yun ,  Hyung Dong Lee ,  Jin Woo Shin ,  Soung Yun Mun ,  Jae Duk Yoo ,  Jung Geun Lee ,  Joon Gu Lee ,  Yeon Hwa Lee ,  Mi Kyung Kim ,  Ji Hyun Seo ,  Kwan Hee Lee

IPC: H01L51/50 ,  H10K85/60 ,  C09K11/06 ,  C07D213/26 ,  C07D251/24 ,  C07C211/56 ,  C07D333/76 ,  C07D307/77 ,  C07C43/29 ,  C07C323/09 ,  C07F7/08 ,  H10K85/40 ,  C07D209/86 ,  C07D307/91 ,  C07D311/96 ,  C07D487/04 ,  H10K50/816 ,  C07C22/08

CPC classification number: H10K85/622 ,  C07C22/08 ,  C07C43/29 ,  C07C211/56 ,  C07C323/09 ,  C07D209/86 ,  C07D213/26 ,  C07D251/24 ,  C07D307/77 ,  C07D307/91 ,  C07D311/96 ,  C07D333/76 ,  C07D487/04 ,  C07F7/081 ,  C07F7/0816 ,  C09K11/06 ,  H10K50/816 ,  H10K85/40 ,  H10K85/60 ,  H10K85/615 ,  H10K85/631 ,  H10K85/636 ,  H10K85/654 ,  H10K85/6572 ,  H10K85/6574 ,  H10K85/6576 ,  C07C2603/18 ,  C07C2603/24 ,  C07C2603/42 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

公开(公告)号：US11856841B2

公开(公告)日：2023-12-26

申请号：US18169524

申请日：2023-02-15

Applicant: DUK SAN NEOLUX CO., LTD. ,  SAMSUNG DISPLAY CO., LTD.

Inventor： Ki Won Kim ,  Kyung Hwan Oh ,  Bu Yong Yun ,  Hyung Dong Lee ,  Jin Woo Shin ,  Soung Yun Mun ,  Jae Duk Yoo ,  Jung Geun Lee ,  Joon Gu Lee ,  Yeon Hwa Lee ,  Mi Kyung Kim ,  Ji Hyun Seo ,  Kwan Hee Lee

IPC: C07C22/08 ,  H01L51/00 ,  H01L51/50 ,  H10K85/60 ,  H10K85/40 ,  C07D213/26 ,  C07D253/02 ,  C07C211/56 ,  C07D333/76 ,  C07D307/92 ,  C07C43/29 ,  C07C323/09 ,  C07F7/08 ,  C07D209/86 ,  C07D307/91 ,  C07D311/96 ,  C07D487/04 ,  C07D307/93 ,  H10K50/82

CPC classification number: H10K85/615 ,  C07C22/08 ,  C07C43/29 ,  C07C211/56 ,  C07C323/09 ,  C07D209/86 ,  C07D213/26 ,  C07D253/02 ,  C07D307/91 ,  C07D307/92 ,  C07D307/93 ,  C07D311/96 ,  C07D333/76 ,  C07D487/04 ,  C07F7/081 ,  C07F7/0816 ,  H10K85/40 ,  H10K85/60 ,  H10K85/622 ,  C07C2601/16 ,  C07C2602/10 ,  C07C2603/24 ,  C07C2603/42 ,  H10K50/82

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

公开(公告)号：US20160300950A1

公开(公告)日：2016-10-13

申请号：US14887483

申请日：2015-10-20

Applicant: Samsung Display Co., Ltd.

Inventor： Hyeon Jun LEE ,  Ki Won Kim ,  Yoo Ho Kim ,  Joon Geol Kim ,  Doo Hyoung Lee

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/45 ,  H01L21/4763 ,  H01L29/22 ,  H01L29/66 ,  H01L21/44 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/44 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1259 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

Abstract: A thin film transistor array panel includes a gate line disposed on a substrate, the gate line including a gate electrode, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the substrate, the semiconductor layer including an oxide semiconductor, a data line disposed on the substrate and crossing the gate line, a data line layer including a source electrode connected to the data line and a drain electrode facing the source electrode, and a passivation layer covering the source electrode and the drain electrode. The data line layer includes copper or a copper alloy, and the semiconductor layer includes a copper doped oxide semiconductor. A content of copper doped on the oxide semiconductor is 0.2% to 0.82%.

Abstract translation: 薄膜晶体管阵列面板包括设置在基板上的栅极线，栅极线包括栅极电极，设置在栅电极上的栅极绝缘层，设置在基板上的半导体层，包括氧化物半导体的半导体层， 数据线，设置在基板上并与栅极线交叉;数据线层，包括连接到数据线的源电极和面对源电极的漏极，以及覆盖源电极和漏电极的钝化层。 数据线层包括铜或铜合金，并且半导体层包括掺铜氧化物半导体。 氧化物半导体上掺杂的铜的含量为0.2〜0.82％。

公开(公告)号：US09142680B2

公开(公告)日：2015-09-22

申请号：US13725333

申请日：2012-12-21

Applicant: Samsung Display Co., Ltd.

Inventor： Hye Young Ryu ,  Ki Won Kim ,  Jae Woo Park ,  Kap Soo Yoon ,  Young Joo Choi

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/786 ,  H01L33/08 ,  H01L27/12

CPC classification number: H01L29/786 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/08

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate line positioned on the substrate; a gate insulating layer positioned on the gate line; a semiconductor layer positioned on the gate insulating layer and having a channel portion; a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer; a passivation layer positioned on the data line and the drain electrode and having a contact hole formed therein; and a pixel electrode positioned on the passivation layer, wherein the pixel electrode contacts the drain electrode within the contact hole, and the channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：基板; 位于基板上的栅极线; 位于栅极线上的栅极绝缘层; 位于所述栅极绝缘层上且具有沟道部分的半导体层; 包括源电极和漏电极的数据线，所述源极和漏极都位于所述半导体层上; 位于数据线和漏电极上并具有形成在其中的接触孔的钝化层; 位于所述钝化层上的像素电极，其中所述像素电极在所述接触孔内接触所述漏电极，并且所述半导体层的沟道部分和所述接触孔在所述衬底的平面图中与所述栅极线重叠。