公开(公告)号：US20160260915A1

公开(公告)日：2016-09-08

申请号：US14949663

申请日：2015-11-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Ryuk Park ,  Hyun-Been Hwang ,  Sang Hun Oh ,  Keun Soo Lee ,  Sun Youl Lee ,  Gyoo Chul Jo

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0097 ,  H01L27/3276 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5281 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible display device including: a display substrate having a display area and a peripheral area surrounding the display area; a plurality of pixels formed in the display area; a passivation layer covering the pixels from the top to protect the pixels; a polarization film layer provided at the top of the passivation layer and of which an edge is extended outside an edge of the passivation layer; and a film wiring made of a flexible material of which one end is connected to the peripheral area.

Abstract translation: 一种柔性显示装置，包括：显示基板，具有显示区域和围绕所述显示区域的周边区域; 形成在所述显示区域中的多个像素; 钝化层，从顶部覆盖像素以保护像素; 设置在所述钝化层的顶部并且其边缘延伸到所述钝化层的边缘外部的偏振膜层; 以及由柔性材料制成的薄膜布线，其一端连接到周边区域。

公开(公告)号：US10147774B2

公开(公告)日：2018-12-04

申请号：US14307980

申请日：2014-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

公开(公告)号：US09508778B2

公开(公告)日：2016-11-29

申请号：US14599189

申请日：2015-01-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Nam-Hee Kim ,  Keun Soo Lee ,  Sun Youl Lee ,  Kwang-Min Kim ,  Mi Kyung Kim ,  Yang Wan Kim ,  Jong-Ryuk Park ,  Kyung Jin Lee ,  Sang Min Yi ,  Sang Shin Lee

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3246 ,  H01L27/3216 ,  H01L27/3218 ,  H01L51/0011 ,  H01L51/525

Abstract: An organic light emitting device includes: a first substrate; a plurality of electrodes on the first substrate; a pixel definition layer on the plurality of electrodes and including a plurality of openings and respectively exposing the plurality of electrodes; and a spacer on the pixel definition layer, wherein the pixel definition layer includes a first opening and a second opening adjacent to each other along a first direction by an interval for each pixel, and a third opening adjacent to the first opening and the second opening by an interval along a second direction crossing the first direction, and wherein the spacer is at a crossing point of a first imaginary line extending in the first direction and passing between the first opening and the third opening and a second imaginary line extending in the second direction and passing between the first opening and the second opening.

Abstract translation: 一种有机发光器件包括：第一衬底; 第一基板上的多个电极; 多个电极上的像素限定层，并且包括多个开口并分别暴露多个电极; 以及所述像素限定层上的间隔物，其中所述像素限定层包括第一开口和第二开口，所述第一开口和第二开口沿着第一方向彼此相邻，每个像素的间隔相邻;以及邻近所述第一开口和所述第二开口的第三开口 沿着与第一方向交叉的第二方向的间隔，并且其中间隔件处于沿第一方向延伸并在第一开口和第三开口之间延伸的第一假想线的交叉点，以及在第二方向上延伸的第二假想线 方向并且在第一开口和第二开口之间通过。

公开(公告)号：US20150311473A1

公开(公告)日：2015-10-29

申请号：US14599189

申请日：2015-01-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Nam-Hee Kim ,  Keun Soo Lee ,  Sun Youl Lee ,  Kwang-Min Kim ,  Mi Kyung Kim ,  Yang Wan Kim ,  Jong-Ryuk Park ,  Kyung Jin Lee ,  Sang Min Yi ,  Sang Shin Lee

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L27/3246 ,  H01L27/3216 ,  H01L27/3218 ,  H01L51/0011 ,  H01L51/525

Abstract: An organic light emitting device includes: a first substrate; a plurality of electrodes on the first substrate; a pixel definition layer on the plurality of electrodes and including a plurality of openings and respectively exposing the plurality of electrodes; and a spacer on the pixel definition layer, wherein the pixel definition layer includes a first opening and a second opening adjacent to each other along a first direction by an interval for each pixel, and a third opening adjacent to the first opening and the second opening by an interval along a second direction crossing the first direction, and wherein the spacer is at a crossing point of a first imaginary line extending in the first direction and passing between the first opening and the third opening and a second imaginary line extending in the second direction and passing between the first opening and the second opening.

Abstract translation: 一种有机发光器件包括：第一衬底; 第一基板上的多个电极; 多个电极上的像素限定层，并且包括多个开口并分别暴露多个电极; 以及所述像素限定层上的间隔物，其中所述像素限定层包括第一开口和第二开口，所述第一开口和第二开口沿着第一方向彼此相邻，每个像素的间隔相邻;以及邻近所述第一开口和所述第二开口的第三开口 沿着与第一方向交叉的第二方向的间隔，并且其中间隔件处于沿第一方向延伸并在第一开口和第三开口之间延伸的第一假想线的交叉点，以及在第二方向上延伸的第二假想线 方向并且在第一开口和第二开口之间通过。

公开(公告)号：US12167629B2

公开(公告)日：2024-12-10

申请号：US18355080

申请日：2023-07-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Ryuk Park ,  Keun Soo Lee ,  Sun Youl Lee ,  Yun-Mo Chung ,  Jae Beom Choi

IPC: H10K50/844 ,  H10K50/842 ,  H10K59/131 ,  H10K59/88 ,  H10K71/00 ,  H10K77/10 ,  H10K59/12 ,  H10K102/00

Abstract: A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

公开(公告)号：US11963404B2

公开(公告)日：2024-04-16

申请号：US17375461

申请日：2021-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Changho Yi ,  Jung-Woo Ha ,  Jong-Ryuk Park ,  Ji-Eun Lee ,  Sungho Kim ,  Joonhyoung Park ,  Seokje Seong

IPC: H10K59/126 ,  G02F1/133 ,  G02F1/1362 ,  H10K59/131 ,  H10K77/10

CPC classification number: H10K59/126 ,  G02F1/133 ,  G02F1/13306 ,  G02F1/136286 ,  G02F1/13629 ,  H10K59/131 ,  H10K77/10

Abstract: A display device includes a substrate including an organic film layer, a first lower pattern which is disposed on the substrate, includes overlap patterns, first bridges, and second bridges, and has a mesh shape, a second lower pattern which is disposed in a same layer as the first lower pattern, is connected to the first lower pattern, and surrounds the first lower pattern, a first active pattern disposed on the first lower pattern, and a plurality of gate electrodes disposed on the first active pattern and overlapping the overlap patterns.

公开(公告)号：US11917895B2

公开(公告)日：2024-02-27

申请号：US18178683

申请日：2023-03-06

Applicant: Samsung Display Co., LTD.

Inventor： Jiyoun Lee ,  Hyunyoung Kim ,  Rohyeon Park ,  Jong-Ryuk Park ,  Changwook Kang

IPC: H10K71/00 ,  H10K50/81 ,  H10K50/82 ,  H10K71/20

CPC classification number: H10K71/00 ,  H10K50/81 ,  H10K50/82 ,  H10K71/233

Abstract: A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

公开(公告)号：US11616214B2

公开(公告)日：2023-03-28

申请号：US17138124

申请日：2020-12-30

Applicant: Samsung Display Co., LTD.

Inventor： Il-Joo Kim ,  Gunwoo Ko ,  Yong-Hwan Kim ,  Taekon Kim ,  Hyunyoung Kim ,  Jong-Ryuk Park ,  Wangwoo Lee ,  Hyungjun Lim ,  Youngbae Jung ,  Jung-Hyun Cho

IPC: G06F3/041 ,  H01L51/52 ,  H01L27/32

Abstract: A display device includes a display layer including an active area including a plurality of pixel areas, and a peripheral area adjacent to the active area, an insulating layer disposed on the display layer, the insulating layer including at least one first opening overlapping the plurality of pixel areas, and at least one second opening in the peripheral area, a refractive index layer disposed on the insulating layer, having a refractive index greater than a refractive index of the insulating layer, and spaced apart from the at least one second opening, and a polarizing layer overlapping the refractive index layer. At least a portion of the polarizing layer overlaps the at least one second opening.

公开(公告)号：US11588122B2

公开(公告)日：2023-02-21

申请号：US16987115

申请日：2020-08-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Ryuk Park ,  Hyun-Been Hwang ,  Sang Hun Oh ,  Keun Soo Lee ,  Sun Youl Lee ,  Gyoo Chui Jo

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

Abstract: A flexible display device including: a display substrate having a display area and a peripheral area surrounding the display area; a plurality of pixels formed in the display area; a passivation layer covering the pixels from the top to protect the pixels; a polarization film layer provided at the top of the passivation layer and of which an edge is extended outside an edge of the passivation layer; and a film wiring made of a flexible material of which one end is connected to the peripheral area.

公开(公告)号：US09576797B2

公开(公告)日：2017-02-21

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477 ,  H01L27/32

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。