公开(公告)号：US11963404B2

公开(公告)日：2024-04-16

申请号：US17375461

申请日：2021-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Changho Yi ,  Jung-Woo Ha ,  Jong-Ryuk Park ,  Ji-Eun Lee ,  Sungho Kim ,  Joonhyoung Park ,  Seokje Seong

IPC: H10K59/126 ,  G02F1/133 ,  G02F1/1362 ,  H10K59/131 ,  H10K77/10

CPC classification number: H10K59/126 ,  G02F1/133 ,  G02F1/13306 ,  G02F1/136286 ,  G02F1/13629 ,  H10K59/131 ,  H10K77/10

Abstract: A display device includes a substrate including an organic film layer, a first lower pattern which is disposed on the substrate, includes overlap patterns, first bridges, and second bridges, and has a mesh shape, a second lower pattern which is disposed in a same layer as the first lower pattern, is connected to the first lower pattern, and surrounds the first lower pattern, a first active pattern disposed on the first lower pattern, and a plurality of gate electrodes disposed on the first active pattern and overlapping the overlap patterns.

公开(公告)号：US11832471B2

公开(公告)日：2023-11-28

申请号：US17209498

申请日：2021-03-23

Applicant: Samsung Display Co., LTD.

Inventor： Youhan Moon ,  Deokhoi Kim ,  Swae-Hyun Kim ,  Jeongho Lee ,  Jung-Woo Ha

IPC: H10K50/844 ,  H10K59/121 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K77/10 ,  H10K59/12

CPC classification number: H10K50/844 ,  H10K59/121 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K77/111 ,  H10K59/1201

Abstract: A method includes providing an active pattern and gate metal patterns, and inorganic insulation layers respectively therebetween in a pixel area and each extending to a bending area, providing a first photoresist pattern defining a first opening in the bending area, providing by using the first photoresist pattern, at least one of the inorganic layers in the bending area which is etched, providing a remaining photoresist pattern defining a first remaining opening corresponding to the first opening and a second opening corresponding to the active pattern, and providing by using the remaining photoresist pattern, both a contact hole corresponding to the second opening and exposing the portion of the active pattern to outside the remaining photoresist pattern, and a portion of the base substrate corresponding to the first remaining opening and exposed to outside the remaining photoresist pattern.