公开(公告)号：US11563069B2

公开(公告)日：2023-01-24

申请号：US17002696

申请日：2020-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Sewan Son ,  Moosoon Ko ,  Seokje Seong ,  Seongjun Lee ,  Jeongsoo Lee ,  Jiseon Lee ,  Changho Yi ,  Hyeri Cho

IPC: H01L27/14 ,  H01L27/32 ,  H01L27/12 ,  G09G3/3258

Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

公开(公告)号：US20230389397A1

公开(公告)日：2023-11-30

申请号：US18116433

申请日：2023-03-02

Applicant: Samsung Display Co., Ltd.

Inventor： Kyeongwoo Jang ,  Sungho Kim ,  Kiho Bang ,  Jinsung An ,  Minwoo Woo ,  Wangwoo Lee ,  Changho Yi ,  Hyeri Cho ,  Seunghyun Lee

IPC: H10K59/80 ,  H10K59/131 ,  H04M1/02

CPC classification number: H10K59/873 ,  H10K59/131 ,  H04M1/0266

Abstract: A display apparatus includes a display area and a non-display area, an inorganic insulating layer, display elements in the display area, an encapsulation layer including a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer, a dam in the non-display area, and a power supply line on the inorganic insulating layer in the non-display area, and a portion of the power supply line intersects the dam, an edge of the portion of the power supply line is covered by at least one transparent conductive material layer, a portion of the first inorganic encapsulation layer is on the portion of the power supply line covered by the at least one transparent conductive material layer.

公开(公告)号：US11963404B2

公开(公告)日：2024-04-16

申请号：US17375461

申请日：2021-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Changho Yi ,  Jung-Woo Ha ,  Jong-Ryuk Park ,  Ji-Eun Lee ,  Sungho Kim ,  Joonhyoung Park ,  Seokje Seong

IPC: H10K59/126 ,  G02F1/133 ,  G02F1/1362 ,  H10K59/131 ,  H10K77/10

CPC classification number: H10K59/126 ,  G02F1/133 ,  G02F1/13306 ,  G02F1/136286 ,  G02F1/13629 ,  H10K59/131 ,  H10K77/10

Abstract: A display device includes a substrate including an organic film layer, a first lower pattern which is disposed on the substrate, includes overlap patterns, first bridges, and second bridges, and has a mesh shape, a second lower pattern which is disposed in a same layer as the first lower pattern, is connected to the first lower pattern, and surrounds the first lower pattern, a first active pattern disposed on the first lower pattern, and a plurality of gate electrodes disposed on the first active pattern and overlapping the overlap patterns.

公开(公告)号：US20230157074A1

公开(公告)日：2023-05-18

申请号：US18096623

申请日：2023-01-13

Applicant: Samsung Display Co., Ltd.

Inventor： Sewan Son ,  Moosoon Ko ,  Seokje Seong ,  Seongjun Lee ,  Jeongsoo Lee ,  Jiseon Lee ,  Changho Yi ,  Hyeri Cho

IPC: H10K59/121 ,  H10K59/126 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H10K59/126 ,  H10K59/131 ,  H01L27/1225

Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

公开(公告)号：US12167641B2

公开(公告)日：2024-12-10

申请号：US18096623

申请日：2023-01-13

Applicant: Samsung Display Co., Ltd.

Inventor： Sewan Son ,  Moosoon Ko ,  Seokje Seong ,  Seongjun Lee ,  Jeongsoo Lee ,  Jiseon Lee ,  Changho Yi ,  Hyeri Cho

IPC: H10K59/12 ,  H10K59/121 ,  H10K59/126 ,  H10K59/131 ,  G09G3/3258 ,  H01L27/12 ,  H10K59/124

Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

公开(公告)号：US11997895B2

公开(公告)日：2024-05-28

申请号：US17381579

申请日：2021-07-21

Applicant: Samsung Display Co., Ltd.

Inventor： Changho Yi ,  Sungho Kim ,  Seokje Seong ,  Yoon-Jong Cho ,  Hyeri Cho

IPC: H10K59/131 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/135 ,  H10K59/12 ,  H10K59/121

CPC classification number: H10K59/131 ,  G02F1/1343 ,  G02F1/134309 ,  G02F1/1345 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/1357 ,  H10K59/1213 ,  H10K59/1201

Abstract: A display device includes a substrate, a first lower pattern disposed on the substrate, a second lower pattern disposed in a same layer as the first lower pattern and integrally formed with the first lower pattern, an etch stopper disposed on the second lower pattern, a power voltage line disposed on the first lower pattern, and a transfer pattern disposed on the etch stopper, connected to the power voltage line, and contacting the second lower pattern through a contact hole defined through the etch stopper.

公开(公告)号：US20210265437A1

公开(公告)日：2021-08-26

申请号：US17002696

申请日：2020-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Sewan Son ,  Moosoon Ko ,  Seokje Seong ,  Seongjun Lee ,  Jeongsoo Lee ,  Jiseon Lee ,  Changho Yi ,  Hyeri Cho

IPC: H01L27/32

Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.