公开(公告)号：US09076775B2

公开(公告)日：2015-07-07

申请号：US14017635

申请日：2013-09-04

Applicant: QUALCOMM Incorporated

Inventor： Ming Cai ,  Samit Sengupta ,  Chock Hing Gan ,  PR Chidambaram

IPC: H01L27/088 ,  H01L21/70 ,  H01L21/8238 ,  H01L29/49 ,  H01L21/28 ,  G06F17/50 ,  H01L21/66

CPC classification number: H01L27/088 ,  G06F17/5068 ,  H01L21/28035 ,  H01L21/823456 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L29/4916

Abstract: A method includes forming a first poly-silicon gate of a first transistor, the first poly-silicon gate having a first length. The first transistor is located in a first core. The method also includes forming a second poly-silicon gate of a second transistor, the second poly-silicon gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core.

Abstract translation: 一种方法包括形成第一晶体管的第一多晶硅栅极，第一多晶硅栅极具有第一长度。 第一晶体管位于第一芯中。 该方法还包括形成第二晶体管的第二多晶硅栅极，第二多晶硅栅极具有比第一长度短的第二长度。 第二晶体管位于第二核心中。 第一芯位于比第二芯更靠近半导体晶粒的中心的位置。

公开(公告)号：US20150091060A1

公开(公告)日：2015-04-02

申请号：US14040366

申请日：2013-09-27

Applicant: QUALCOMM Incorporated

Inventor： Bin Yang ,  PR Chidambaram ,  John Jianhong Zhu ,  Jihong Choi ,  Da Yang ,  Ravi Mahendra Todi ,  Giridhar Nallapati ,  Chock Hing Gan ,  Ming Cai ,  Samit Sengupta

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/778 ,  H01L29/7834

Abstract: In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel

Abstract translation: 在特定实施例中，半导体器件包括源极区和漏极区之间的高迁移率沟道。 高迁移率通道基本上延伸了一个门的长度。 半导体器件还包括从源极区域或漏极区域向高迁移率通道延伸的掺杂区域。 衬底的一部分位于掺杂区域和高迁移率通道之间

公开(公告)号：US09425296B2

公开(公告)日：2016-08-23

申请号：US14021795

申请日：2013-09-09

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Ming Cai ,  Bin Yang

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L29/66977 ,  H01L29/66356 ,  H01L29/66795 ,  H01L29/7391 ,  H01L29/7827

Abstract: A tunnel field transistor (TFET) device includes a fin structure that protrudes from a substrate surface. The fin structure includes a base portion proximate to the substrate surface, a top portion, and a first pair of sidewalls extending from the base portion to the top portion. The first pair of sidewalls has a length corresponding to a length of the fin structure. The fin structure also includes a first doped region having a first dopant concentration at the base portion of the fin structure. The fin structure also includes a second doped region having a second dopant concentration at the top portion of the fin structure. The TFET device further includes a gate including a first conductive structure neighboring a first sidewall of the first pair of sidewalls. A dielectric layer electrically isolates the first conductive structure from the first sidewall.

Abstract translation: 隧道场晶体管（TFET）器件包括从衬底表面突出的鳍结构。 翅片结构包括靠近基底表面的基部，顶部和从基部延伸到顶部的第一对侧壁。 第一对侧壁的长度对应于翅片结构的长度。 翅片结构还包括在鳍结构的基部处具有第一掺杂剂浓度的第一掺杂区域。 鳍结构还包括在鳍结构的顶部具有第二掺杂剂浓度的第二掺杂区。 TFET器件还包括栅极，其包括与第一对侧壁的第一侧壁相邻的第一导电结构。 电介质层将第一导电结构与第一侧壁电隔离。

公开(公告)号：US09245971B2

公开(公告)日：2016-01-26

申请号：US14040366

申请日：2013-09-27

Applicant: QUALCOMM Incorporated

Inventor： Bin Yang ,  P R Chidambaram ,  John Jianhong Zhu ,  Jihong Choi ,  Da Yang ,  Ravi Mahendra Todi ,  Giridhar Nallapati ,  Chock Hing Gan ,  Ming Cai ,  Samit Sengupta

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/8238

CPC classification number: H01L29/66431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/778 ,  H01L29/7834

Abstract: In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.

Abstract translation: 在特定实施例中，半导体器件包括源极区和漏极区之间的高迁移率沟道。 高迁移率通道基本上延伸了一个门的长度。 半导体器件还包括从源极区域或漏极区域向高迁移率通道延伸的掺杂区域。 衬底的一部分位于掺杂区域和高迁移率通道之间。

公开(公告)号：US09461040B2

公开(公告)日：2016-10-04

申请号：US14792363

申请日：2015-07-06

Applicant: QUALCOMM Incorporated

Inventor： Ming Cai ,  Samit Sengupta ,  Chock Hing Gan ,  PR Chidambaram

IPC: H01L21/00 ,  H01L21/66 ,  H01L27/00 ,  H01L29/00 ,  G06F17/50 ,  H01L27/088 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/02

CPC classification number: H01L27/088 ,  G06F17/5068 ,  H01L21/28035 ,  H01L21/823456 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L29/4916

Abstract: A method includes forming a first gate of a first transistor, the first gate having a first length. The first transistor is located in a first core. The method also includes forming a second gate of a second transistor, the second gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core. The second transistor and the first transistor are corresponding transistors.

Abstract translation: 一种方法包括形成第一晶体管的第一栅极，第一栅极具有第一长度。 第一晶体管位于第一芯中。 该方法还包括形成第二晶体管的第二栅极，第二栅极具有比第一长度短的第二长度。 第二晶体管位于第二核心中。 第一芯位于比第二芯更靠近半导体晶粒的中心的位置。 第二晶体管和第一晶体管是相应的晶体管。

公开(公告)号：US20150311198A1

公开(公告)日：2015-10-29

申请号：US14792363

申请日：2015-07-06

Applicant: QUALCOMM INCORPORATED

Inventor： Ming Cai ,  Samit Sengupta ,  Chock Hing Gan ,  PR Chidambaram

IPC: H01L27/088 ,  H01L27/02 ,  H01L21/66 ,  H01L21/8234

CPC classification number: H01L27/088 ,  G06F17/5068 ,  H01L21/28035 ,  H01L21/823456 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L29/4916

Abstract: A method includes forming a first gate of a first transistor, the first gate having a first length. The first transistor is located in a first core. The method also includes forming a second gate of a second transistor, the second gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core. The second transistor and the first transistor are corresponding transistors.

Abstract translation: 一种方法包括形成第一晶体管的第一栅极，第一栅极具有第一长度。 第一晶体管位于第一芯中。 该方法还包括形成第二晶体管的第二栅极，第二栅极具有比第一长度短的第二长度。 第二晶体管位于第二核心中。 第一芯位于比第二芯更靠近半导体晶粒的中心的位置。 第二晶体管和第一晶体管是相应的晶体管。

公开(公告)号：US20150069458A1

公开(公告)日：2015-03-12

申请号：US14021795

申请日：2013-09-09

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Ming Cai ,  Bin Yang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66977 ,  H01L29/66356 ,  H01L29/66795 ,  H01L29/7391 ,  H01L29/7827

Abstract: A tunnel field transistor (TFET) device includes a fin structure that protrudes from a substrate surface. The fin structure includes a base portion proximate to the substrate surface, a top portion, and a first pair of sidewalls extending from the base portion to the top portion. The first pair of sidewalls has a length corresponding to a length of the fin structure. The fin structure also includes a first doped region having a first dopant concentration at the base portion of the fin structure. The fin structure also includes a second doped region having a second dopant concentration at the top portion of the fin structure. The TFET device further includes a gate including a first conductive structure neighboring a first sidewall of the first pair of sidewalls. A dielectric layer electrically isolates the first conductive structure from the first sidewall.

Abstract translation: 隧道场晶体管（TFET）器件包括从衬底表面突出的鳍结构。 翅片结构包括靠近基底表面的基部，顶部和从基部延伸到顶部的第一对侧壁。 第一对侧壁的长度对应于翅片结构的长度。 翅片结构还包括在鳍结构的基部处具有第一掺杂剂浓度的第一掺杂区域。 鳍结构还包括在鳍结构的顶部具有第二掺杂剂浓度的第二掺杂区。 TFET器件还包括栅极，其包括与第一对侧壁的第一侧壁相邻的第一导电结构。 电介质层将第一导电结构与第一侧壁电隔离。

公开(公告)号：US20150061037A1

公开(公告)日：2015-03-05

申请号：US14017635

申请日：2013-09-04

Applicant: QUALCOMM Incorporated

Inventor： Ming Cai ,  Samit Sengupta ,  Chock Hing Gan ,  PR Chidambaram

IPC: H01L29/49 ,  G06F17/50 ,  H01L21/66 ,  H01L21/28

CPC classification number: H01L27/088 ,  G06F17/5068 ,  H01L21/28035 ,  H01L21/823456 ,  H01L22/14 ,  H01L22/20 ,  H01L27/0207 ,  H01L29/4916

Abstract: A method includes forming a first poly-silicon gate of a first transistor, the first poly-silicon gate having a first length. The first transistor is located in a first core. The method also includes forming a second poly-silicon gate of a second transistor, the second poly-silicon gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core.

Abstract translation: 一种方法包括形成第一晶体管的第一多晶硅栅极，第一多晶硅栅极具有第一长度。 第一晶体管位于第一芯中。 该方法还包括形成第二晶体管的第二多晶硅栅极，第二多晶硅栅极具有比第一长度短的第二长度。 第二晶体管位于第二核心中。 第一芯位于比第二芯更靠近半导体晶粒的中心的位置。