公开(公告)号：US20160233418A1

公开(公告)日：2016-08-11

申请号：US15133018

申请日：2016-04-19

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Matthias Georg GOTTWALD ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。

公开(公告)号：US20160181508A1

公开(公告)日：2016-06-23

申请号：US14581361

申请日：2014-12-23

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

Abstract translation: 垂直磁隧道结（MTJ）的合成反铁磁（SAF）参考层的材料堆可以包括SAF耦合层。 材料堆叠还可以包括SAF耦合层上的无定形间隔层。 非晶间隔层可以包括钽和钴或钽和铁或钴以及铁和钽的合金或多层。 非晶间隔层还可以包括SAF耦合层的处理表面。

公开(公告)号：US20150311427A1

公开(公告)日：2015-10-29

申请号：US14334015

申请日：2014-07-17

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg GOTTWALD ,  Jimmy KAN ,  Kangho LEE ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

Abstract translation: 用于制造垂直磁性隧道结（pMTJ）器件的方法包括在pMTJ器件的第一电极上生长晶种层。 种子层沿生长轴具有均匀的预定晶体取向。 该方法还包括平面化种子层，同时保持种子层的均匀的预定晶体取向。

公开(公告)号：US20180212142A1

公开(公告)日：2018-07-26

申请号：US15467803

申请日：2017-03-23

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Jimmy Jianan KAN ,  Peiyuan WANG ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08

Abstract: A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.

公开(公告)号：US20160072043A1

公开(公告)日：2016-03-10

申请号：US14483104

申请日：2014-09-10

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Jimmy KAN ,  Matthias Georg Gottwald ,  Xiaochun ZHU ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

Abstract translation: 磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。 制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。 该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

公开(公告)号：US20150228891A1

公开(公告)日：2015-08-13

申请号：US14179502

申请日：2014-02-12

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ includes a fixed layer and a barrier layer on the fixed layer. Such an MTJ also includes a free layer interfacing with the barrier layer. The free layer has a crystal structure in accordance with the barrier layer. The MTJ further includes an amorphous capping layer interfacing with the free layer.

Abstract translation: 描述了磁性隧道结（MTJ）和制造MTJ的方法。 MTJ在固定层上包括固定层和阻挡层。 这样的MTJ还包括与阻挡层接合的自由层。 自由层根据阻挡层具有晶体结构。 MTJ还包括与自由层接合的非晶覆盖层。

公开(公告)号：US20180061467A1

公开(公告)日：2018-03-01

申请号：US15247791

申请日：2016-08-25

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Jianan KAN ,  Chando PARK ,  Peiyuan WANG ,  Sungryul KIM ,  Seung Hyuk KANG

IPC: G11C11/16 ,  H01L27/22

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222

Abstract: A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (pMTJ) including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer may support the free layer. A driver may be operable to set a state of at least one of the bit cells using an increased spin-transfer torque (STT) current and a spin-hall effect from the spin-hall conductive material layer. The increased STT current may be driven through the spin-hall conductive material layer and the pMTJ so that a spin current is generated from the reference layer and the spin-hall conductive material layer.

公开(公告)号：US20160133833A1

公开(公告)日：2016-05-12

申请号：US14995193

申请日：2016-01-13

Applicant: QUALCOMM INCORPORATED

Inventor： Yu LU ,  Chando PARK ,  Wei-Chuan CHEN

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask.

公开(公告)号：US20150303373A1

公开(公告)日：2015-10-22

申请号：US14255624

申请日：2014-04-17

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan CHEN ,  Xiaochun ZHU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) includes a free layer formed from a ferrimagnetic rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy. The MTJ further includes a pinned layer formed from a rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy, the pinned layer comprising one or more amorphous thin insertion layers such that a net magnetic moment of the free layer and the pinned layer is low or close to zero.

Abstract translation: 磁隧道结（MTJ）包括由铁氧体稀土 - 过渡金属（RE-TM）合金形成的自由层，其具有由RE-稀土 - 过渡金属（RE-TM）合金的稀土（RE）组成的亚晶格矩所主导的净时刻， TM合金。 MTJ还包括由稀土 - 过渡金属（RE-TM）合金形成的钉扎层，其具有以RE-TM合金的稀土（RE）组合物的亚晶格矩为主的净矩，被钉扎 层包括一个或多个非晶薄插入层，使得自由层和钉扎层的净磁矩低或接近于零。

公开(公告)号：US20190332306A1

公开(公告)日：2019-10-31

申请号：US15963668

申请日：2018-04-26

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Wei-Chuan CHEN ,  Sungryul KIM ,  Adam Edward NEWHAM ,  Seung Hyuk KANG ,  Rashid Ahmed Akbar ATTAR

IPC: G06F3/06 ,  G11C11/00 ,  G11C29/52 ,  A61N1/372

Abstract: Aspects of the present disclosure relate to protecting the contents of memory in an electronic device, and in particular to systems and methods for transferring data between memories of an electronic device in the presence of strong magnetic fields. In one embodiment, a method of protecting data in a memory in an electronic device includes storing data in a first memory in the electronic device; determining, via a magnetic sensor, a strength of an ambient magnetic field; comparing the strength of the ambient magnetic field to a threshold; transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.