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公开(公告)号：US20230317449A1
公开(公告)日：2023-10-05
申请号：US18003133
申请日：2021-07-27
发明人： Awnish Gupta , Bart J. Van Schravendijk , Jason Alexander Varnell , Joseph R. Abel , Jennifer Leigh Petraglia , Adrien LaVoie
IPC分类号： H01L21/02 , H01L21/311 , H01J37/32 , C23C16/52
CPC分类号： H01L21/0234 , C23C16/52 , H01J37/32449 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/31116 , H01J2237/3321
摘要： Various embodiments herein relate to methods and apparatus for depositing doped and undoped silicon-containing films having a high degree of purity. In one example, the method includes exposing the substrate to a first reactant and a second reactant; reacting the first and second reactants with one another to form a silicon-containing material and depositing a portion of the silicon-containing film on the substrate; before the silicon-containing film is complete, performing an impurity reduction operation including: (i) generating a plasma from a plasma generation gas comprising inert gas and hydrogen, where the plasma generation gas is substantially free of oxygen, and (ii) exposing the substrate to the plasma to thereby reduce a concentration of fluorine, carbon, hydrogen, and/or nitrogen in the silicon-containing film; and repeating these operations (or a subset thereof) until the silicon-containing film is deposited to a final thickness.
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2.发明申请公开(公告)号：US20190206677A1
公开(公告)日：2019-07-04
申请号：US16294783
申请日：2019-03-06
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3105
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/31055 , H01L21/31116 , H01L21/67017 , H01L21/67103 , H01L21/67248
摘要： Methods and apparatuses for depositing material into high aspect ratio features, features in a multi-laminate stack, features having positively sloped sidewalls, features having negatively sloped sidewalls, features having a re-entrant profile, and/or features having sidewall topography are described herein. Methods involve depositing a first amount of material, such as a dielectric (e.g., silicon oxide), into a feature and forming a sacrificial helmet on the field surface of the substrate, etching some of the first amount of the material to open the feature opening and/or smoothen sidewalls of the feature, and depositing a second amount of material to fill the feature. The sacrificial helmet may be the same as or different material from the first amount of material deposited into the feature.
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公开(公告)号：US20240167153A1
公开(公告)日：2024-05-23
申请号：US18283796
申请日：2022-03-25
发明人： Awnish Gupta , Douglas Walter Agnew , Bart Jan van Schravendijk , Joseph R. Abel , Frank L. Pasquale , Adrien Lavoie
IPC分类号： C23C16/455 , C23C16/56
CPC分类号： C23C16/45536 , C23C16/45512 , C23C16/45534 , C23C16/56
摘要： In one example, a method for depositing a film on a substrate comprises arranging a substrate on a substrate support in a processing chamber and setting a processing pressure, temperature and pressure in the chamber. The method includes striking a plasma and depositing and annealing the film on the substrate at a thickness in a predetermined film thickness range.
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公开(公告)号：US20210272801A1
公开(公告)日：2021-09-02
申请号：US17253602
申请日：2019-06-27
IPC分类号： H01L21/02 , H01J37/32 , C23C16/455
摘要： A method for processing a substrate is described. A first reactant in vapor phase is introduced into a reaction chamber having the substrate therein. The first reactant is allowed to be adsorb onto the substrate surface. The non-reactive portion of the first reactant is purged from the reaction chamber after a flow of the first reactant has ceased. The second reactant is introduced in vapor phase into the reaction chamber while the first reactant is adsorbed onto the substrate surface. The second reactant comprises a 1:1:1 ratio of dihydrogen (H2), a nitrogen-containing reactant, and an oxygen-containing reactant. A plasma is ignited based on the second reactant. The substrate surface is exposed to the plasma. The plasma is extinguished. Gas from the reaction chamber is purged.
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公开(公告)号：US20240347337A1
公开(公告)日：2024-10-17
申请号：US18656209
申请日：2024-05-06
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/325 , C23C16/401 , C23C16/45527 , C23C16/56 , H01L21/02112 , H01L21/02126 , H01L21/02131 , H01L21/0214 , H01L21/02211
摘要： Various embodiments include methods to produce low dielectric-constant (low-κ) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-κ materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.
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6.发明公开公开(公告)号：US20240222151A1
公开(公告)日：2024-07-04
申请号：US18557043
申请日：2022-04-28
发明人： Eli Jeon , Michael Philip Roberts , Douglas Walter Agnew , Daniel Boatright , Arun Anandhan Duraisamy , Joseph R. Abel , William Laurence McDaniel
IPC分类号： H01L21/67
CPC分类号： H01L21/67017
摘要： The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.
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公开(公告)号：US11651963B2
公开(公告)日：2023-05-16
申请号：US17204758
申请日：2021-03-17
IPC分类号： H01L21/311 , H01L21/033 , H01L21/02 , H01L21/027
CPC分类号： H01L21/0337 , H01L21/0228 , H01L21/0273 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/31144 , H01L21/31138
摘要： A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.
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公开(公告)号：US20220037146A1
公开(公告)日：2022-02-03
申请号：US17276454
申请日：2019-09-20
摘要： Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.
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公开(公告)号：US12125705B2
公开(公告)日：2024-10-22
申请号：US17441178
申请日：2020-03-17
发明人： Purushottam Kumar , Gengwei Jiang , Bart J. Van Schravendijk , Tengfei Miao , Joseph R. Abel , Adrien Lavoie
IPC分类号： H01L21/225 , H01L21/02
CPC分类号： H01L21/2256 , H01L21/02164 , H01L21/022 , H01L21/0228 , H01L21/02321 , H01L21/2257
摘要： A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion barrier layer are removed.
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公开(公告)号：US12087574B2
公开(公告)日：2024-09-10
申请号：US17253602
申请日：2019-06-27
IPC分类号： H01L21/02 , C23C16/455 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/45536 , H01J37/32082 , H01J37/32449 , H01J37/32522 , H01J37/32834 , H01L21/02164 , H01L21/02211 , H01L21/0228 , H01L21/02315 , H01L21/0234 , H01J2237/332 , H01J2237/338
摘要： A method for processing a substrate is described. A first reactant in vapor phase is introduced into a reaction chamber having the substrate therein. The first reactant is allowed to be adsorb onto the substrate surface. The non-reactive portion of the first reactant is purged from the reaction chamber after a flow of the first reactant has ceased. The second reactant is introduced in vapor phase into the reaction chamber while the first reactant is adsorbed onto the substrate surface. The second reactant comprises a 1:1:1 ratio of dihydrogen (H2), a nitro-gen-containing reactant, and an oxygen-containing reactant. A plasma is ignited based on the second reactant. The substrate surface is exposed to the plasma. The plasma is extinguished. Gas from the reaction chamber is purged.
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