- 专利标题： Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film
-
申请号： US17204758申请日： 2021-03-17
-
公开(公告)号： US11651963B2公开(公告)日： 2023-05-16
- 发明人: Ishtak Karim , Pulkit Agarwal , Joseph R. Abel , Purushottam Kumar , Adrien Lavoie
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 分案原申请号： US15974172 2018.05.08
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/033 ; H01L21/02 ; H01L21/027
摘要：
A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.
公开/授权文献
信息查询
IPC分类:
