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公开(公告)号：US11021792B2
公开(公告)日：2021-06-01
申请号：US16104871
申请日：2018-08-17
发明人： Eli Jeon , Adrien LaVoie , Purushottam Kumar , Jeffrey Kersten , Gautam Dhar
IPC分类号： C23C16/455
摘要： A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels. A push inert gas from the push gas source is flowed into the first junction, through the common conduit and out of the second junction to the processing chamber.
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公开(公告)号：US20230220544A1
公开(公告)日：2023-07-13
申请号：US18000562
申请日：2021-06-01
发明人： Awnish Gupta , Ian John Curtin , Douglas Walter Agnew , Frank Loren Pasquale , Eli Jeon , Adrien LaVoie
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： C23C16/401 , C23C16/45527 , C23C16/45557 , C23C16/45553
摘要： Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.
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公开(公告)号：US20210238743A1
公开(公告)日：2021-08-05
申请号：US17238097
申请日：2021-04-22
发明人： Eli Jeon , Adrien LaVoie , Purushottam Kumar , Jeffrey Kersten , Gautam Dhar
IPC分类号： C23C16/455
摘要： A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels. A push inert gas from the push gas source is flowed into the first junction, through the common conduit and out of the second junction to the processing chamber.
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公开(公告)号：US20220384186A1
公开(公告)日：2022-12-01
申请号：US17755269
申请日：2020-10-29
发明人： Douglas Walter Agnew , Joseph R. Abel , Eli Jeon
IPC分类号： H01L21/02
摘要： Methods and apparatuses for depositing material into high aspect ratio features are described herein. Methods involve depositing an oxide material using a hydrogen-containing oxidizing chemistry. Methods may also involve thermally treating deposited oxide material in the presence of hydrogen to remove seams within the deposited oxide material.
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5.发明公开公开(公告)号：US20240222151A1
公开(公告)日：2024-07-04
申请号：US18557043
申请日：2022-04-28
发明人： Eli Jeon , Michael Philip Roberts , Douglas Walter Agnew , Daniel Boatright , Arun Anandhan Duraisamy , Joseph R. Abel , William Laurence McDaniel
IPC分类号： H01L21/67
CPC分类号： H01L21/67017
摘要： The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.
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公开(公告)号：US20200056288A1
公开(公告)日：2020-02-20
申请号：US16104871
申请日：2018-08-17
发明人： Eli Jeon , Adrien LaVoie , Purushottam Kumar , Jeffrey Kersten , Gautam Dhar
IPC分类号： C23C16/455
摘要： A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels. A push inert gas from the push gas source is flowed into the first junction, through the common conduit and out of the second junction to the processing chamber.
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公开(公告)号：US10242848B2
公开(公告)日：2019-03-26
申请号：US14568608
申请日：2014-12-12
IPC分类号： H01L21/67 , H01L21/687 , H01L21/683 , C23C14/50 , C23C16/452 , H01J37/32 , H01L21/285 , C23C16/458 , C23C16/455 , H01L21/02 , C23C16/52
摘要： A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.
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公开(公告)号：US20160172165A1
公开(公告)日：2016-06-16
申请号：US14568608
申请日：2014-12-12
IPC分类号： H01J37/32
CPC分类号： H01J37/32715 , C23C16/45544 , C23C16/458 , C23C16/52 , H01J37/32733 , H01L21/0228 , H01L21/0262 , H01L21/28556 , H01L21/67 , H01L21/68735
摘要： A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.
摘要翻译： 提供了一种在实施用于沉积使用该载体环的薄膜和室的腔室中的载体环。 载体环具有外边缘侧和晶片边缘侧的环形盘形状。 载体环具有在外边缘侧到晶片边缘侧之间延伸的顶部载体环表面。 晶片边缘侧包括比顶部载体环表面低的下载体环表面。 晶片边缘侧还包括多个接触支撑结构。 每个接触支撑结构位于下载体环表面的边缘处，并且具有在下载体环表面和顶部载体环表面之间的高度，并且接触支撑结构具有渐缩的边缘和拐角。 在顶部载体环表面和下部载体环表面之间限定了台阶，使得顶部面向边缘设置在台阶的顶部，下部内边缘设置在台阶的底部。 每个顶面对边缘和下内边缘都具有圆形的非锋利边缘，并且每个接触支撑结构的顶部被配置为与用于提升和降低和移动晶片的晶片的底部边缘表面接触。
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