公开(公告)号：US12125705B2

公开(公告)日：2024-10-22

申请号：US17441178

申请日：2020-03-17

申请人： Lam Research Corporation

发明人： Purushottam Kumar ,  Gengwei Jiang ,  Bart J. Van Schravendijk ,  Tengfei Miao ,  Joseph R. Abel ,  Adrien Lavoie

IPC分类号： H01L21/225 ,  H01L21/02

CPC分类号： H01L21/2256 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/2257

摘要： A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion barrier layer are removed.

公开(公告)号：US20220293442A1

公开(公告)日：2022-09-15

申请号：US17634214

申请日：2020-08-11

申请人： Lam Research Corporation

发明人： Purushottam Kumar ,  Tengfei Miao ,  Gengwei Jiang ,  Daniel Ho ,  Joseph R. Abel ,  Siddappa Attur ,  Pulkit Agarwal

IPC分类号： H01L21/67 ,  G05B19/418

摘要： Methods and system are provided for dynamic process control in substrate processing, for example in semiconductor manufacturing applications. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate to dynamic process control and monitoring for chamber parameter matching and gas line charge times.