公开(公告)号：US20160150191A1

公开(公告)日：2016-05-26

申请号：US14946777

申请日：2015-11-20

Applicant: KLA-Tencor Corporation

Inventor： Laurent Karsenti ,  Kris Bhaskar ,  Mark Wagner ,  Brian Duffy ,  Vijayakumar Ramachandran

IPC: H04N7/18 ,  G06T19/00 ,  G06T7/00

CPC classification number: G06F16/9535 ,  G06T1/0007 ,  G06T7/0006 ,  G06T2207/10144 ,  G06T2207/30148 ,  H04L67/306 ,  H04N7/181

Abstract: Methods and systems for detecting defects on a specimen are provided. One system includes a storage medium configured for storing images for a physical version of a specimen generated by an inspection system. At least two dies are formed on the specimen with different values of one or more parameters of a fabrication process performed on the specimen. The system also includes computer subsystem(s) configured for comparing portions of the stored images generated at locations on the specimen at which patterns having the same as-designed characteristics are formed with at least two of the different values. The portions of the stored images that are compared are not constrained by locations of the dies on the specimen, locations of the patterns within the dies, or locations of the patterns on the specimen. The computer subsystem(s) are also configured for detecting defects at the locations based on results of the comparing.

Abstract translation: 提供了检测试样缺陷的方法和系统。 一个系统包括被配置为存储由检查系统生成的样本的物理版本的图像的存储介质。 在样品上形成至少两个模具，其具有在样品上进行的制造工艺的一个或多个参数的不同值。 该系统还包括计算机子系统，其被配置用于比较在样本上产生的存储图像的部分，其中形成具有相同设计特征的图案具有不同值中的至少两个。 被比较的存储的图像的部分不受标本上的模具的位置，模具内的图案的位置或样本上的图案的位置的约束。 计算机子系统还被配置为基于比较的结果来检测位置处的缺陷。

公开(公告)号：US20160253450A1

公开(公告)日：2016-09-01

申请号：US15082152

申请日：2016-03-28

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Mark D. Smith ,  Mark Wagner ,  Eran Amit ,  Myungjun Lee

IPC: G06F17/50 ,  G01N21/93 ,  G01N21/956

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于取决于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 替代地或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产出关键模式，其中缩小由模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。

公开(公告)号：US09612541B2

公开(公告)日：2017-04-04

申请号：US14461638

申请日：2014-08-18

Applicant: KLA-Tencor Corporation

Inventor： Rui-fang Shi ,  Mark Wagner

IPC: G03F7/20 ,  G06T7/00 ,  G03F1/84 ,  G03F1/70

CPC classification number: G03F7/7065 ,  G03F1/70 ,  G03F1/84 ,  G03F7/705 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire at least two images at different imaging configurations from each pattern area of the reticle. A reticle pattern is reconstructed based on each at least two images from each pattern area of the reticle. For each reconstructed reticle pattern, a lithographic process with two or more different process conditions is modeled on such reconstructed reticle pattern to generate two or more corresponding modeled test wafer patterns. Each two or more modelled test wafer patterns is analyzed to identify hot spot patterns of the reticle patterns that are susceptible to the different process conditions altering wafer patterns formed with such hot spot patterns.

公开(公告)号：US20160370718A1

公开(公告)日：2016-12-22

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G03F9/00

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

Abstract translation: 柔性稀疏测量样本计划的生成包括从计量工具接收来自一个或多个晶片的全套计量信号，基于全套测量信号确定一组晶片特性，并计算与该组相关联的晶片特性度量 的晶片属性，基于整套测量信号计算一个或多个独立表征度量，以及基于所述晶片属性集合，所述晶片属性度量以及所述一个或多个独立表征度量来生成柔性稀疏样本计划。 使用来自灵活稀疏采样计划的度量信号计算出的一个或多个属性的一个或多个独立特征度量，在由所述整套度量信号计算的一个或多个属性的一个或多个独立特性度量值的选定阈值内。

公开(公告)号：US20150054940A1

公开(公告)日：2015-02-26

申请号：US14461638

申请日：2014-08-18

Applicant: KLA-Tencor Corporation

Inventor： Rui-fang Shi ,  Mark Wagner

IPC: G06T7/00 ,  G03F7/20

CPC classification number: G03F7/7065 ,  G03F1/70 ,  G03F1/84 ,  G03F7/705 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire at least two images at different imaging configurations from each pattern area of the reticle. A reticle pattern is reconstructed based on each at least two images from each pattern area of the reticle. For each reconstructed reticle pattern, a lithographic process with two or more different process conditions is modeled on such reconstructed reticle pattern to generate two or more corresponding modeled test wafer patterns. Each two or more modelled test wafer patterns is analyzed to identify hot spot patterns of the reticle patterns that are susceptible to the different process conditions altering wafer patterns formed with such hot spot patterns.

Abstract translation: 公开了用于限定光刻掩模版的方法和装置。 掩模版检查工具用于从掩模版的每个图案区域获取不同成像配置的至少两个图像。 基于每个至少两个来自掩模版的图案区域的图像来重建掩模版图案。 对于每个重建的掩模版图案，具有两个或多个不同工艺条件的光刻工艺在这种重建的掩模版图案上被建模以产生两个或更多个相应的建模测试晶片图案。 分析每两个或更多个建模的测试晶片图案，以识别对不同工艺条件敏感的改变由这种热点图案形成的晶片图案的掩模版图案的热点图案。

公开(公告)号：US10402461B2

公开(公告)日：2019-09-03

申请号：US14946777

申请日：2015-11-20

Applicant: KLA-Tencor Corporation

Inventor： Laurent Karsenti ,  Kris Bhaskar ,  Mark Wagner ,  Brian Duffy ,  Vijayakumar Ramachandran

IPC: G06T1/00 ,  G06T7/00 ,  H04N7/18 ,  H04L29/08 ,  G06F16/9535

Abstract: Methods and systems for detecting defects on a specimen are provided. One system includes a storage medium configured for storing images for a physical version of a specimen generated by an inspection system. At least two dies are formed on the specimen with different values of one or more parameters of a fabrication process performed on the specimen. The system also includes computer subsystem(s) configured for comparing portions of the stored images generated at locations on the specimen at which patterns having the same as-designed characteristics are formed with at least two of the different values. The portions of the stored images that are compared are not constrained by locations of the dies on the specimen, locations of the patterns within the dies, or locations of the patterns on the specimen. The computer subsystem(s) are also configured for detecting defects at the locations based on results of the comparing.

公开(公告)号：US09903711B2

公开(公告)日：2018-02-27

申请号：US15090389

申请日：2016-04-04

Applicant: KLA-Tencor Corporation

Inventor： Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Leonid Poslavsky ,  John Robinson ,  Tal Marciano ,  Barak Bringoltz ,  Tzahi Grunzweig ,  Dana Klein ,  Tal Itzkovich ,  Nadav Carmel ,  Nuriel Amir ,  Vidya Ramanathan ,  Janay Camp ,  Mark Wagner

IPC: G01B11/14 ,  G01B11/27 ,  G01N21/95 ,  G03F7/20 ,  G01N21/21 ,  G01N21/31 ,  G01N21/41 ,  G01N21/47 ,  G01N21/64

CPC classification number: G01B11/272 ,  G01N21/211 ,  G01N21/31 ,  G01N21/41 ,  G01N21/4738 ,  G01N21/4788 ,  G01N21/6489 ,  G01N21/9501 ,  G01N2021/213 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70533 ,  G03F7/70616

Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

公开(公告)号：US09576861B2

公开(公告)日：2017-02-21

申请号：US14083126

申请日：2013-11-18

Applicant: KLA-Tencor Corporation

Inventor： Allen Park ,  Ellis Chang ,  Michael Adel ,  Kris Bhaskar ,  Ady Levy ,  Amir Widmann ,  Mark Wagner ,  Songnian Rong

IPC: G06F17/50 ,  H01L21/66

CPC classification number: H01L22/12 ,  G06F17/5081

Abstract: Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool.

Abstract translation: 通用的基于目标的检测驱动度量包括设计多个通过检测工具测量的通用度量目标并且可以用计量工具测量，使用设计数据识别晶片的至少一个管芯内的多个检查特征，将多个通用目标 在晶片的至少一个模具内，每个通用目标被设置为至少接近所识别的可检查特征之一，用检查工具检查包含一个或多个通用目标的区域，以识别一个或多个异常通用目标 检查区域具有检查工具，并且响应于在被检查区域中识别一个或多个异常通用目标，对所述一个或多个异常通用度量目标与计量工具执行一个或多个计量过程。

公开(公告)号：US10754260B2

公开(公告)日：2020-08-25

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G01C9/00 ,  G01C1/00 ,  G03F7/20

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

公开(公告)号：US10685165B2

公开(公告)日：2020-06-16

申请号：US15082152

申请日：2016-03-28

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Mark D. Smith ,  Mark Wagner ,  Eran Amit ,  Myungjun Lee

IPC: G01R31/14 ,  G06F30/398 ,  H01L21/66 ,  G01N21/93 ,  G01N21/956 ,  G06F119/18

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.