公开(公告)号：US20160370718A1

公开(公告)日：2016-12-22

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G03F9/00

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

Abstract translation: 柔性稀疏测量样本计划的生成包括从计量工具接收来自一个或多个晶片的全套计量信号，基于全套测量信号确定一组晶片特性，并计算与该组相关联的晶片特性度量 的晶片属性，基于整套测量信号计算一个或多个独立表征度量，以及基于所述晶片属性集合，所述晶片属性度量以及所述一个或多个独立表征度量来生成柔性稀疏样本计划。 使用来自灵活稀疏采样计划的度量信号计算出的一个或多个属性的一个或多个独立特征度量，在由所述整套度量信号计算的一个或多个属性的一个或多个独立特性度量值的选定阈值内。

公开(公告)号：US10754260B2

公开(公告)日：2020-08-25

申请号：US15184612

申请日：2016-06-16

Applicant: KLA-Tencor Corporation

Inventor： Onur Demirer ,  Roie Volkovich ,  William Pierson ,  Mark Wagner ,  Dana Klein

IPC: G01C9/00 ,  G01C1/00 ,  G03F7/20

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.