公开(公告)号：US20200176415A1

公开(公告)日：2020-06-04

申请号：US16633240

申请日：2018-07-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Ryuji SUGIURA ,  Yuta KONDOH ,  Naoki UCHIYAMA

IPC: H01L23/00 ,  H01L27/06 ,  H01L21/268 ,  H01L21/78

Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

公开(公告)号：US20160167355A1

公开(公告)日：2016-06-16

申请号：US15051038

申请日：2016-02-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hideki SHIMOI ,  Naoki UCHIYAMA ,  Daisuke KAWAGUCHI

IPC: B32B37/06 ,  B32B38/00

CPC classification number: B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract translation: 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

公开(公告)号：US20150111365A1

公开(公告)日：2015-04-23

申请号：US14587677

申请日：2014-12-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA ,  Toshimitsu WAKUDA

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract translation: 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US20220352026A1

公开(公告)日：2022-11-03

申请号：US17868644

申请日：2022-07-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/768 ,  B23K26/53 ,  B28D5/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/304 ,  H01L23/00 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20210057402A1

公开(公告)日：2021-02-25

申请号：US16633367

申请日：2018-07-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Ryuji SUGIURA ,  Yuta KONDOH ,  Naoki UCHIYAMA

IPC: H01L25/00 ,  H01L21/268 ,  H01L21/78 ,  H01L21/304 ,  H01L25/18

Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

公开(公告)号：US20160343619A1

公开(公告)日：2016-11-24

申请号：US15226519

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L21/306 ,  H01L21/268 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20160343617A1

公开(公告)日：2016-11-24

申请号：US15226284

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20240082959A1

公开(公告)日：2024-03-14

申请号：US18268652

申请日：2021-12-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yo SUGIMOTO ,  Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Naoki UCHIYAMA ,  Takashi KURITA ,  Ryo YOSHIMURA

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/364 ,  H01L21/268

CPC classification number: B23K26/53 ,  B23K26/032 ,  B23K26/364 ,  H01L21/268 ,  B23K2103/56

Abstract: A laser processing apparatus includes a support unit that supports a wafer including a plurality of functional elements disposed adjacent to each other via a street, an irradiation unit that irradiates the street with laser light, and a control unit that controls the irradiation unit based on information about the streets so that a first region and a second region of the street are simultaneously irradiated with the laser light, and a power of the laser light for removing a surface layer of the street in the first region is higher than a power for removing the surface layer of the street in the first region. The information about the street includes information that a processing threshold value indicating a difficulty of laser processing in the first region is lower than a processing threshold value in the second region.

公开(公告)号：US20170271210A1

公开(公告)日：2017-09-21

申请号：US15617431

申请日：2017-06-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  B28D5/00 ,  H01L21/768 ,  B23K26/40 ,  H01L23/00 ,  H01L21/306 ,  B23K26/0622 ,  B23K26/00 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20160111333A1

公开(公告)日：2016-04-21

申请号：US14984066

申请日：2015-12-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/268

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.