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49 条记录 (耗时 0.021 秒)

    Laser ablation for integrated circuit fabrication
    7.
    发明授权
    Laser ablation for integrated circuit fabrication 有权
    激光烧蚀用于集成电路制造

    公开(公告)号：US08419895B2

    公开(公告)日：2013-04-16

    申请号：US12788843

    申请日：2010-05-27

    申请人： Bing Dang ,  John Knickerbocker ,  Aparna Prabhakar ,  Peter Sorce ,  Robert E. Trzcinski ,  Cornelia K. Tsang

    发明人： Bing Dang ,  John Knickerbocker ,  Aparna Prabhakar ,  Peter Sorce ,  Robert E. Trzcinski ,  Cornelia K. Tsang

    IPC分类号： B32B38/10

    CPC分类号： H01L21/6835 ,  B23K26/361 ,  H01L2221/68381 ,  Y10T156/1111 ,  Y10T156/1158 ,  Y10T156/1917

    摘要： A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC) includes attaching the handler to the wafer using an adhesive comprising a polymer; performing edge processing to remove an excess portion of the adhesive from an edge of the handler and wafer; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer. A system for releasing a handler from a wafer, the wafer comprising an IC includes a handler attached to a wafer using an adhesive comprising a polymer; an edge processing module, the edge processing module configured to remove an excess portion of the adhesive from the edge of the handler and wafer; and a laser, the laser configured to ablate the adhesive through the handler.

    摘要翻译： 一种用于从晶片释放处理器的方法，包括集成电路（IC）的晶片包括使用包含聚合物的粘合剂将处理器附接到晶片; 执行边缘处理以从处理器和晶片的边缘去除多余的粘合剂部分; 使用激光器通过处理器烧蚀粘合剂，其中基于处理材料的透明度选择激光的波长; 并将处理器与晶片分离。 一种用于从晶片释放处理器的系统，包括IC的晶片包括使用包含聚合物的粘合剂附接到晶片的处理器; 边缘处理模块，所述边缘处理模块被配置为从所述处理器和晶片的边缘去除所述粘合剂的多余部分; 和激光器，激光器被配置为通过处理器消融粘合剂。

    METHODS OF SEPARATING INTEGRATED CIRCUIT CHIPS FABRICATED ON A WAFER
    9.
    发明申请
    METHODS OF SEPARATING INTEGRATED CIRCUIT CHIPS FABRICATED ON A WAFER 审中-公开
    在波形上分离集成电路芯片的方法

    公开(公告)号：US20090311849A1

    公开(公告)日：2009-12-17

    申请号：US12140492

    申请日：2008-06-17

    申请人： Paul S. Andry ,  Bing Dang ,  Matthew J. Farinelli ,  Cornelia K. Tsang

    发明人： Paul S. Andry ,  Bing Dang ,  Matthew J. Farinelli ,  Cornelia K. Tsang

    IPC分类号： H01L21/00

    CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68381 ,  H01L2224/16 ,  H01L2924/14

    摘要： Improved methods of separating integrated circuit chips fabricated on a single wafer are provided. In an embodiment, a method of separating integrated circuit chips fabricated on a wafer comprises: attaching a support to a back surface of the wafer; dicing the wafer to form individual integrated circuit chips attached to the support; attaching a carrier comprising a releasable adhesive material to a front surface of the wafer opposite from the back surface; separating the support from the back surface of the wafer; subjecting the carrier to an effective amount of heat, radiation, or both to reduce the adhesiveness of the adhesive material to allow for removal of at least one of the integrated circuit chips from the carrier; and picking up and moving at least one of the integrated circuit chips using a tool configured to handle the integrated circuit chips.

    摘要翻译： 提供了分离在单个晶片上制造的集成电路芯片的改进的方法。 在一个实施例中，分离在晶片上制造的集成电路芯片的方法包括：将支撑件附接到晶片的背面; 切割晶片以形成附接到支撑件的单个集成电路芯片; 将包含可释放粘合剂材料的载体附接到所述晶片的与所述后表面相对的前表面; 将支撑体从晶片的背面分离; 使载体经受有效量的热量，辐射或两者以降低粘合剂材料的粘附性，以允许将集成电路芯片中的至少一个从载体上移除; 以及使用构造成处理集成电路芯片的工具来拾取和移动至少一个集成电路芯片。

    Silicon Carrier Including An Integrated Heater For Die Rework And Wafer Probe
    10.
    发明申请
    Silicon Carrier Including An Integrated Heater For Die Rework And Wafer Probe 审中-公开
    包括用于芯棒返修和晶片探头的集成加热器的硅载体

    公开(公告)号：US20090178275A1

    公开(公告)日：2009-07-16

    申请号：US12348115

    申请日：2009-01-02

    申请人： Bing Dang ,  Steven L. Wright

    发明人： Bing Dang ,  Steven L. Wright

    IPC分类号： H05K3/00

    CPC分类号： H01L23/345 ,  H01L23/147 ,  H01L23/5384 ,  H01L24/81 ,  H01L24/98 ,  H01L25/0655 ,  H01L2224/16235 ,  H01L2224/81234 ,  H01L2224/81815 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/14 ,  Y10T29/4913 ,  H01L2924/00

    摘要： Forming a silicon carrier interposer having an integrated heater includes forming a multi-layer silicon member having a main body portion including a first surface, a second surface and an intermediate portion, and attaching first and second electronic components to the first surface of the multi-layer silicon member. A plurality of vias extend between the first surface and the second surface and are adapted to provide an interface between the first and second electronic components and a substrate. In addition, a plurality of heating elements are integrated into the main body portion of the multi-layer silicon member. The heating elements are selectively activated to create a reflow of solder to facilitate one of an attachment of one of the first and second electronic components to the multi-layer silicon member and a detachment of the one of the first and second electronic components from the multi-layer silicon member.

    摘要翻译： 形成具有集成加热器的硅载体插入件包括形成具有包括第一表面，第二表面和中间部分的主体部分的多层硅元件，以及将第一和第二电子元件附接到多层硅片的第一表面， 层硅构件。 多个通孔在第一表面和第二表面之间延伸并且适于提供第一和第二电子部件与基板之间的界面。 另外，多层加热元件集成在多层硅构件的主体部分中。 加热元件被选择性地激活以产生焊料的回流，以促进第一和第二电子元件中的一个附着到多层硅元件中的一个以及第一和第二电子元件中的一个与多层硅元件的分离 层硅构件。