公开(公告)号：US10483086B2

公开(公告)日：2019-11-19

申请号：US14978120

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

公开(公告)号：US10037877B1

公开(公告)日：2018-07-31

申请号：US15637538

申请日：2017-06-29

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: A61N5/00 ,  H01J49/20 ,  H01J49/12 ,  H01J49/06

CPC classification number: H01J49/20 ,  H01J37/05 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/061 ,  H01J49/126 ,  H01J49/30 ,  H01J2237/15

Abstract: An ion implantation system has an ion source forming an ion beam. An mass analyzer defines and varies a mass analyzed beam along a beam path. A moveable mass resolving aperture assembly has a resolving aperture whose position is selectively varied in response to the variation of the beam path by the mass analyzer. A deflecting deceleration element positioned selectively deflects the beam path and selectively decelerate the mass analyzed beam. A controller selectively operates the ion implantation system in both a drift mode and decel mode. The controller passes the mass analyzed beam along a first path through the resolving aperture without deflection or deceleration in the drift mode and deflects and decelerates the beam along a second path in the decel mode. The position of the resolving aperture is selectively varied based on the variation in the beam path through the mass analyzer and the deflecting deceleration element.

公开(公告)号：US20160189928A1

公开(公告)日：2016-06-30

申请号：US14979663

申请日：2015-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Andy M. Ray

IPC: H01J37/304 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535

Abstract: A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

Abstract translation: 提供了一种通过确定最佳扫描宽度来提高混合扫描注入机的生产率的方法。 提供了一种调整扫描离子束的方法，其中确定期望的束电流以将具有期望特性的工件植入。 扫描的光束利用设置的法拉第杯进行调谐。 调整扫描宽度以使用设置法拉第时间信号获得最佳扫描宽度。 调整光学对应于期望剂量的期望通量值。 当获得期望的通量值时，控制通量分布的均匀性。 进一步测量离子束的角度分布。

公开(公告)号：US20130026356A1

公开(公告)日：2013-01-31

申请号：US13625277

申请日：2012-09-24

Applicant: Axcelis Technologies Inc.

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J3/14 ,  H01J49/26

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US09679739B2

公开(公告)日：2017-06-13

申请号：US14978089

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/00 ,  H01J37/12 ,  H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3171 ,  H01J2237/31705

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

公开(公告)号：US20160189926A1

公开(公告)日：2016-06-30

申请号：US14978120

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

Abstract translation: 提供离子注入系统和方法，其中离子束被调谐到第一处理配方。 沿着扫描平面以第一频率扫描离子束，限定第一扫描离子束。 光束成像设备通过第一扫描离子束平移，并且跨越第一扫描离子的宽度测量第一扫描离子束的一个或多个特性，从而限定与第一扫描离子束相关联的第一光束轮廓。 然后以第二频率扫描离子束，从而限定第二扫描离子束，其中第二频率小于第一频率。 至少部分地基于第一光束轮廓确定与第二扫描离子束相关联的第二光束轮廓。 随后通过第二扫描离子束将离子植入工件。

公开(公告)号：US20160189912A1

公开(公告)日：2016-06-30

申请号：US14978089

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/12 ,  H01J37/20 ,  H01J37/05 ,  H01J37/30 ,  H01J37/147

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3171 ,  H01J2237/31705

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

Abstract translation: 提供了一种用于将低能量离子注入工件的系统和方法。 提供了一种被配置为产生离子束的离子源，其中质量分辨磁体构造成质量分辨离子束。 离子束可以是带状束或扫描的点离子束。 位于质量分辨磁体下游的质量分辨孔径从离子束过滤不期望的物质。 组合的静电透镜系统位于质量分析器的下游，其中离子束的路径被偏转并且污染物通常从离子束过滤掉，同时使离子束同时减速和平行化。 工件扫描系统还位于组合的静电透镜系统的下游，并且被配置为在一个或多个方向上选择性地平移通过离子束的工件，其中将离子注入到工件中。

公开(公告)号：US08502173B2

公开(公告)日：2013-08-06

申请号：US13625277

申请日：2012-09-24

Applicant: Axcelis Technologies Inc.

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J37/317

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US09711329B2

公开(公告)日：2017-07-18

申请号：US14979663

申请日：2015-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Andy M. Ray

IPC: G21K5/04 ,  H01J37/304 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535

Abstract: A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

公开(公告)号：US20160189917A1

公开(公告)日：2016-06-30

申请号：US14979653

申请日：2015-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: H01J37/147 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/1475 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1478 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

Abstract translation: 离子注入系统采用质量分析仪进行质量分析和角度校正。 离子源沿着光束路径产生离子束。 质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。 孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。 分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。 角度测量系统位于分辨孔径的下游，并获得离子束的入射角。 控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。