公开(公告)号：US20170117153A1

公开(公告)日：2017-04-27

申请号：US14981190

申请日：2015-12-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam RAMALINGAM ,  Thanh X. NGUYEN ,  Zhiyong WANG ,  Jianxin LEI ,  Xianmin TANG

IPC: H01L21/285 ,  H01L21/326

CPC classification number: H01L21/2855 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3435 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US20140042016A1

公开(公告)日：2014-02-13

申请号：US14054477

申请日：2013-10-15

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Xianmin TANG ,  Srinivas GANDIKOTA ,  Wei D. WANG ,  Zhendong LIU ,  Kevin MORAES ,  Muhammad M. RASHEED ,  Thanh X. NGUYEN ,  Ananthkrishna JUPUDI

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract translation: 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

公开(公告)号：US20180337052A1

公开(公告)日：2018-11-22

申请号：US16052135

申请日：2018-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam RAMALINGAM ,  Thanh X. NGUYEN ,  Zhiyong WANG ,  Jianxin LEI ,  Xianmin TANG

IPC: H01L21/285 ,  H01L21/326 ,  H01J37/34 ,  C23C14/18 ,  C23C14/35 ,  C23C14/34 ,  C23C14/56

CPC classification number: H01L21/2855 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3435 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; and generating a plasma within the plasma processing chamber to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US20160372319A1

公开(公告)日：2016-12-22

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin ZENG ,  Thanh X. NGUYEN ,  Yana CHENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Srinivas GUGGILLA ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.

Abstract translation: 在一些实施例中，处理设置在物理气相沉积处理室中的衬底支架顶上的衬底的方法包括：（a）通过物理气相沉积工艺在介质的第一表面顶部沉积介电层至第一厚度; （b）向所述物理气相沉积处理室的处理区域提供第一等离子体形成气体，其中所述第一等离子体形成气体包括氢而不是碳; （c）向所述衬底支撑件提供第一量的偏置功率以从所述物理气相沉积处理室的处理区域内的所述第一等离子体形成气体形成第一等离子体; （d）将介电层暴露于第一等离子体; 和（e）重复（a） - （d）将电介质膜沉积到最终厚度。

公开(公告)号：US20140110248A1

公开(公告)日：2014-04-24

申请号：US14036057

申请日：2013-09-25

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Thanh X. NGUYEN ,  Muhammad M. RASHEED ,  Xianmin TANG

IPC: C23C14/34

CPC classification number: C23C14/34 ,  C23C14/0036 ,  C23C14/35

Abstract: According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.

Abstract translation: 根据实施例提供使用物理气相沉积室形成介电膜的方法。 特别地，可以执行粘贴工艺以在物理气相沉积室的内表面上施加导电涂层。 糊化过程可以在调整的工艺参数下进行，例如间隔增加和/或增加的室压力。 经调整的参数可以更有效和更有效地形成导电涂层。