公开(公告)号：US20240093355A1

公开(公告)日：2024-03-21

申请号：US17950046

申请日：2022-09-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Zheyuan CHEN ,  Irena H. WYSOK ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Avinash NAYAK ,  Jianxin LEI

IPC: C23C14/34 ,  C23C14/50

CPC classification number: C23C14/3421 ,  C23C14/3435 ,  C23C14/3485 ,  C23C14/50

Abstract: Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a glassy carbon shutter disk on a substrate support of the PVD chamber; energizing an oxygen-containing cleaning gas disposed in the inner volume of the PVD chamber to create a plasma reactive with carbon-based materials; and heating the process kit having a carbon-based material adhered thereto while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.

公开(公告)号：US20230122956A1

公开(公告)日：2023-04-20

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  John C. FORSTER ,  Irena H. WYSOK ,  Tiefeng SHI ,  Gang FU ,  Renu WHIG ,  Keith A. MILLER ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Jianxin LEI ,  Rongjun WANG ,  Tza-Jing GUNG ,  Kirankumar Neelasandra SAVANDAIAH ,  Avinash NAYAK ,  Lei ZHOU

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US20180337052A1

公开(公告)日：2018-11-22

申请号：US16052135

申请日：2018-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam RAMALINGAM ,  Thanh X. NGUYEN ,  Zhiyong WANG ,  Jianxin LEI ,  Xianmin TANG

IPC: H01L21/285 ,  H01L21/326 ,  H01J37/34 ,  C23C14/18 ,  C23C14/35 ,  C23C14/34 ,  C23C14/56

CPC classification number: H01L21/2855 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3435 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; and generating a plasma within the plasma processing chamber to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US20230073011A1

公开(公告)日：2023-03-09

申请号：US17900318

申请日：2022-08-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  Irena H. WYSOK ,  Jianxin LEI ,  Rongjun WANG ,  Lei ZHOU ,  Kirankumar Neelasandra SAVANDAIAH ,  Sundarapandian Ramalinga Vijayalakshmi REDDY

IPC: H01J37/34 ,  C23C14/56

Abstract: Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a non-sputtering shutter disk on a substrate support of the PVD chamber; energizing an oxygen-containing cleaning gas disposed in the inner volume of the PVD chamber to create a plasma reactive with carbon-based materials; and heating the process kit having a carbon-based material adhered thereto while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.

公开(公告)号：US20170117153A1

公开(公告)日：2017-04-27

申请号：US14981190

申请日：2015-12-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam RAMALINGAM ,  Thanh X. NGUYEN ,  Zhiyong WANG ,  Jianxin LEI ,  Xianmin TANG

IPC: H01L21/285 ,  H01L21/326

CPC classification number: H01L21/2855 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3435 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.