Abstract:
Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.
Abstract:
Embodiments of the present disclosure generally relate to methods for refurbishing aerospace components by removing corrosion and depositing protective coatings. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.
Abstract:
The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.
Abstract:
Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.
Abstract:
The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes an aluminum body having an anodized coating disposed on the aluminum body formed from a neutral electrolyte solution, wherein the anodized coating has a film density higher than 3.1 g/cm−2.
Abstract translation:本发明涉及室等离子体处理室装置中使用的腔室部件或制造室部件的方法。 在一个实施例中,用于等离子体处理装置的腔室部件包括铝本体,其具有设置在由中性电解质溶液形成的铝体上的阳极氧化涂层,其中阳极氧化涂层的膜密度高于3.1g / cm -2。
Abstract:
In one embodiment, an apparatus to identify chemical and spatial properties of nanoparticles in a semiconductor cleaning solution, comprises a broadband light source to provide an excitation beam; a focusing lens in a path of the excitation beam to form a focused excitation beam; a sample cell, the sample cell configured to hold a cleaning solution and one or more insoluble analytes-of-interest therein; a plurality of optical lens in the path of one or more fluorescence signals to focus the one or more fluorescence signals; and an imaging device, wherein the imaging device captures the one or more fluorescence signals to form a plurality of images that contain both spatial data and spectral data about the one or more insoluble analytes-of-interest.
Abstract:
The present disclosure relates to protective multilayer coatings for processing clumbers and processing clumber components. In one embodiment, a multilayer protean e coating includes a metal nitride layer and an oxide layer disposed thereon. In one embodiment, the multilayer protective coating further includes an oxynitride interlayer and/or an oxy fluoride layer. The multilayer protective coating may be formed on a metal alloy or ceramic substrate, such as a processing clumber or a processing clumber component used in tire field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, the metal nitride layer and the oxide layer are deposited on the substrate by atomic layer deposition.
Abstract:
Embodiments of the present disclosure generally relate to oxide layer compositions for turbine engine components and methods for depositing the oxide layer compositions. In one or more embodiments, a turbine engine component includes a superalloy substrate and a bond coat disposed over the superalloy substrate. The turbine engine component includes an oxide layer disposed over the bond coat, where the oxide layer includes aluminum oxide and a metal dopant. The turbine engine component includes a thermal barrier coating disposed over the oxide layer.
Abstract:
Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.
Abstract:
In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.