公开(公告)号：US20170260618A1

公开(公告)日：2017-09-14

申请号：US15451995

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Laksheswar KALITA ,  Prerna A. GORADIA ,  Geetika BAJAJ ,  Yogita PAREEK ,  Yixing LIN ,  Dmitry LUBOMIRSKY ,  Ankur KADAM ,  Bipin THAKUR ,  Kevin A. PAPKE ,  Kaushik VAIDYA

IPC: C23C8/12 ,  C22F1/16 ,  C23C8/16 ,  C25D3/54 ,  C25D5/50

CPC classification number: C23C8/12 ,  C22F1/16 ,  C23C8/02 ,  C23C8/16 ,  C25D3/54 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D11/08 ,  C25D11/34

Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

公开(公告)号：US20170260639A1

公开(公告)日：2017-09-14

申请号：US15452062

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Yogita PAREEK ,  Laksheswar KALITA ,  Geetika BAJAJ ,  Kevin A. PAPKE ,  Ankur KADAM ,  Bipin THAKUR ,  Yixing LIN ,  Dmitry LUBOMIRSKY ,  Prerna A. GORADIA

IPC: C25D3/44 ,  C25D5/50 ,  H01L21/67 ,  C25D5/18

CPC classification number: C25D3/44 ,  C25D3/66 ,  C25D5/022 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D11/04 ,  H01L21/67023

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

公开(公告)号：US20180330929A1

公开(公告)日：2018-11-15

申请号：US15591908

申请日：2017-05-10

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao ARNEPALLI ,  Bipin THAKUR ,  Kevin A. PAPKE ,  Yogita PAREEK

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32449 ,  H01J37/32522

Abstract: Embodiments of the disclosure generally relate to methods for removal of accumulated process byproducts from components of a semiconductor processing chamber. In one embodiment of the disclosure, a method for cleaning components within a processing chamber is disclosed. The method includes heating the components within the processing chamber to a temperature between about 150-300 degrees Celsius, exposing the components of the chamber to one or more precursor gases and removing a product of a reaction between a fluorine-based compound disposed on the components and the one or more precursor gases. The one or more precursor gases include trimethyl aluminum or tin acetylacetonate.

公开(公告)号：US20160258064A1

公开(公告)日：2016-09-08

申请号：US14705659

申请日：2015-05-06

Applicant: Applied Materials, Inc.

Inventor： Yogita PAREEK ,  Ankur KADAM ,  Laksheswar KALITA ,  Bipin THAKUR ,  Dmitry LUBOMIRSKY

IPC: C23C16/50 ,  C25D11/08 ,  C25D11/10

CPC classification number: C23C16/50 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/4581 ,  C25D11/06 ,  C25D11/08 ,  C25D11/10

Abstract: The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes an aluminum body having an anodized coating disposed on the aluminum body formed from a neutral electrolyte solution, wherein the anodized coating has a film density higher than 3.1 g/cm−2.

Abstract translation: 本发明涉及室等离子体处理室装置中使用的腔室部件或制造室部件的方法。 在一个实施例中，用于等离子体处理装置的腔室部件包括铝本体，其具有设置在由中性电解质溶液形成的铝体上的阳极氧化涂层，其中阳极氧化涂层的膜密度高于3.1g / cm -2。