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公开(公告)号：US12101083B2
公开(公告)日：2024-09-24
申请号：US17807799
申请日：2022-06-20
IPC分类号： H03K17/042 , H02M3/157 , H02M1/08
CPC分类号： H03K17/04206 , H02M3/157 , H02M1/08
摘要： A gate driver circuit includes a pulse generator that receives an input signal and generates a pulse signal in response to a switch-on command included in the input signal. The pulse signal has a pulse with a pulse length that is dependent on a level of a pulse control signal. The circuit further includes a sampling circuit that samples an output voltage subsequent to the pulse and stores a respective sampled value, and a controller that receives the sampled value of the output voltage and a reference voltage and updates the level of the pulse control signal based on the sampled value and the reference voltage. A driver circuit generates the output voltage based on the pulse signal.
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公开(公告)号：US11855618B2
公开(公告)日：2023-12-26
申请号：US17953456
申请日：2022-09-27
发明人： Hironori Akiyama , Akimasa Niwa
IPC分类号： H03K17/00 , H03K17/687 , H03K17/284 , H03K17/94 , H03K17/06 , H03K17/16 , H03K17/0812 , H03K17/042 , H03K17/081
CPC分类号： H03K17/687 , H03K17/04206 , H03K17/063 , H03K17/08104 , H03K17/08122 , H03K17/16 , H03K17/284 , H03K17/94
摘要： A gate drive device drives a gate of a semiconductor switching element and controls a transient voltage corresponding to a voltage of a main terminal of the semiconductor switching element to a target value of the transient voltage at a time of switching the semiconductor switching element. The gate drive device includes a calculation circuit, a drive circuit, a detection circuit, and a learning circuit. The calculation circuit executes a predetermined calculation mode to calculate an operation amount for operating gate drive speed of the semiconductor switching element. The drive circuit drives the gate of the semiconductor switching element according to the operation amount. The detection circuit detects the transient voltage. The learning circuit executes learning processing to change the predetermined calculation mode based on the operation amount calculated by the calculation circuit and the transient voltage detected by the detection circuit.
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3.发明公开公开(公告)号：US20230327661A1
公开(公告)日：2023-10-12
申请号：US18334412
申请日：2023-06-14
发明人： Nigel Springett
IPC分类号： H03K17/16 , H03K17/042 , H03K17/687 , H03K17/567
CPC分类号： H03K17/168 , H03K17/04206 , H03K17/687 , H03K2017/6875 , H03K17/6871 , H03K17/567 , H03K17/161
摘要： A cascode switch comprising a normally-on semiconductor device comprising a gate, a source and a drain, and a normally-off semiconductor device comprising a gate, a source and a drain. The drain of the normally-off semiconductor device coupled to the normally-on semiconductor device, the source of the normally-on semiconductor device coupled to the drain of the normally-off semiconductor device and the gate of the normally-on semiconductor device coupled to the source of the normally-off semiconductor device. The cascode switch further comprises a leakage current clamp coupled across the normally-off semiconductor device, the leakage current clamp circuit configured to prevent the drain of the normally-off semiconductor from going too high due to leakage current.
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公开(公告)号：US20230308085A1
公开(公告)日：2023-09-28
申请号：US18325875
申请日：2023-05-30
IPC分类号： H03K17/042 , H03K17/0412 , H03K17/687
CPC分类号： H03K17/04206 , H03K17/04123 , H03K17/687 , H03K2217/0054
摘要： A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.
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公开(公告)号：US20230261646A1
公开(公告)日：2023-08-17
申请号：US18303992
申请日：2023-04-20
申请人： ROHM CO., LTD.
发明人： Masanobu TSUJI
IPC分类号： H03K17/042 , H03K17/10 , H03K17/687
CPC分类号： H03K17/04206 , H03K17/102 , H03K17/6871
摘要： A controller controls multiple parallel-coupled power transistors. A correction amount calculation unit generates a reference value based on multiple detection values, each of which has a correlation with the switching loss of corresponding one of the multiple power transistors, and generates multiple correction amounts such that the multiple detection values approach the reference value. A gate signal generating unit generates multiple gate signals based on a control instruction and the multiple correction amounts.
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公开(公告)号：US20230260989A1
公开(公告)日：2023-08-17
申请号：US18303257
申请日：2023-04-19
申请人： ROHM CO., LTD.
发明人： Yusuke KUBO
IPC分类号： H01L27/06 , H03K17/042 , H03K17/16 , H01L29/06 , H01L29/78
CPC分类号： H01L27/0629 , H03K17/04206 , H03K17/165 , H01L29/0696 , H01L29/7804 , H01L29/7802
摘要： A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.
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公开(公告)号：US11716079B2
公开(公告)日：2023-08-01
申请号：US17565732
申请日：2021-12-30
发明人： Michal Olsak , Pavel Baros
IPC分类号： G05F1/565 , H03K17/12 , H03K17/042
CPC分类号： H03K17/122 , G05F1/565 , H03K17/04206
摘要： A method of operating a driver circuit includes receiving a data signal at a first input of an amplification circuit; amplifying, using the amplification circuit, the data signal to produce an output signal through an output pin; attenuating, using a feedback network, the output signal to produce a feedback signal; coupling the feedback signal to a second input of the amplification circuit; detecting, using a control circuit, a fault condition; and decoupling, responsive to detecting the fault condition, the feedback signal from the second input of the amplification circuit. In some embodiments, the driver circuit transmits a fault condition signal to an electronic control unit of an automobile.
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公开(公告)号：US11664369B2
公开(公告)日：2023-05-30
申请号：US17040420
申请日：2019-03-29
申请人： ROHM CO., LTD.
发明人： Yusuke Kubo
IPC分类号： H01L27/06 , H03K17/042 , H03K17/16 , H01L29/06 , H01L29/78
CPC分类号： H01L27/0629 , H01L29/0696 , H01L29/7802 , H01L29/7804 , H03K17/04206 , H03K17/165
摘要： A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.
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9.发明授权公开(公告)号：US11611206B2
公开(公告)日：2023-03-21
申请号：US17830402
申请日：2022-06-02
发明人： Mark D. Creech
IPC分类号： H02H3/08 , H02H9/02 , H03K17/082 , H02H3/087 , H03K17/042 , H03K17/0412 , H01L27/02 , H02M1/32 , H03K17/687
摘要： Devices having one primary transistor, or a plurality of primary transistors in parallel, protect electrical circuits from overcurrent conditions. Optionally, the devices have only two terminals and require no auxiliary power to operate. In those devices, the voltage drop across the device provides the electrical energy to power the device. A third or fourth terminal can appear in further devices, allowing additional overcurrent and overvoltage monitoring opportunities. Autocatalytic voltage conversion allows certain devices to rapidly limit or block nascent overcurrents.
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公开(公告)号：US20220239348A1
公开(公告)日：2022-07-28
申请号：US17545830
申请日：2021-12-08
IPC分类号： H04B5/00 , H02J50/80 , H03K17/042 , H03K17/082 , H02J50/10 , H04L25/02
摘要： A controller comprising a driver interface referenced to a first reference potential, a drive circuit referenced to a second reference potential, and an inductive coupling. The driver interface comprises a first receiver configured to compare a portion of signals having a first polarity on the first terminal of the inductive coupling with a first threshold, and a second receiver configured to compare a portion of signals having a second polarity on the second terminal of the inductive coupling with a third threshold. The drive circuit comprises a first transmitter configured to drive current in a first direction in the second winding to transmit first signals, and a second transmitter configured to drive current in a second direction in the second winding to transmit second signals, the second direction opposite the first direction.
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