公开(公告)号：US11127850B2

公开(公告)日：2021-09-21

申请号：US15879753

申请日：2018-01-25

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L21/265 ,  H03K17/16 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L21/28 ,  H01L29/40 ,  H01L21/3065 ,  H01L29/36

Abstract: A semiconductor device includes a first conductivity type semiconductor layer including an active cell portion and an outer peripheral portion around the active cell portion, a second conductivity type body region selectively formed at a surface portion of the semiconductor layer in the active cell portion, a first conductivity type source region formed at an inner part of the body region, a gate electrode that faces a part of the body region through a gate insulating film, a second conductivity type column layer straddling a boundary between the active cell portion and the outer peripheral portion inside the semiconductor layer such that the column layer is disposed at a lower part of the body region in the active cell portion, a source electrode that is electrically connected to the source region, and an outer peripheral electrode that is electrically connected to the column layer in the outer peripheral portion.

公开(公告)号：US09887279B2

公开(公告)日：2018-02-06

申请号：US15264069

申请日：2016-09-13

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L29/10 ,  H01L29/739 ,  H01L23/31 ,  H01L23/00 ,  H02P27/08 ,  H02M7/5387 ,  H02M1/00

CPC classification number: H01L29/7393 ,  H01L23/3107 ,  H01L24/09 ,  H01L29/0634 ,  H01L29/1095 ,  H01L2224/04042 ,  H02M7/5387 ,  H02M7/53875 ,  H02M2001/0048 ,  H02P27/08 ,  Y02B70/1491

Abstract: A semiconductor device includes a conductivity type drain layer, a conductivity type drift layer, conductivity type base regions located in an upper surface of the drift layer, a conductivity type source region which is disposed inside each of the base regions and is spaced apart from the periphery of the base region, and a channel region is formed between the source region and the periphery of the base region. The semiconductor device further includes a gate insulating layer covering the channel region, a gate electrode which is located on the gate insulating layer and faces the channel region, a plurality of conductivity type column regions, each extends from the plurality of base regions to the drain layer in the drift layer, a trap level forming region in the drift layer, a drain electrode electrically connected to the drain layer, and a source electrode electrically connected to the source region.

公开(公告)号：US09685505B2

公开(公告)日：2017-06-20

申请号：US14958690

申请日：2015-12-03

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L29/739

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device that includes: a semiconductor layer of a first conductivity type, having a peripheral area and a cell area inside of the peripheral area; a region of a second conductivity type in the semiconductor layer in the cell area; and a plurality of guard rings of the second conductivity type in the semiconductor layer in the peripheral area, each having a substantially same depth as the region of the second conductivity type in the cell area. The plurality of guard rings include at least one first ring that has a diffusion region in the depth profile in the semiconductor layer that is wider at a top thereof.

公开(公告)号：US10103228B2

公开(公告)日：2018-10-16

申请号：US15461018

申请日：2017-03-16

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L29/06 ,  H01L31/00 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/739 ,  H01L29/167 ,  H01L21/263 ,  H01L21/268

Abstract: A semiconductor device includes a semiconductor layer, having a drain region, a body region, and a source region, a gate electrode, facing the body region via a gate insulating film, a first pillar layer disposed inside the semiconductor layer so as to be continuous to the body region, and a trap level region, disposed inside the semiconductor layer and containing charged particles that form a trap level, and an electric field concentration portion, where an electric field concentrates in an off state in which a channel is not formed in the body region, and the trap level region are disposed at mutually different depth positions in a depth direction of the first pillar layer.

公开(公告)号：US11664369B2

公开(公告)日：2023-05-30

申请号：US17040420

申请日：2019-03-29

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L27/06 ,  H03K17/042 ,  H03K17/16 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0629 ,  H01L29/0696 ,  H01L29/7802 ,  H01L29/7804 ,  H03K17/04206 ,  H03K17/165

Abstract: A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.

公开(公告)号：US11264451B2

公开(公告)日：2022-03-01

申请号：US16823938

申请日：2020-03-19

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417

Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface, a first region of a first conductivity type formed on the first surface side of the semiconductor layer, a second region of a second conductivity type in contact with the first region, a third region of the first conductivity type that is in contact with the second region and exposed from the first surface side of the semiconductor layer, a gate electrode facing the second region through a gate insulating film, a first electrode that is physically separated from the gate electrode and faces the second region and the third region through an insulating film, a second electrode formed on the semiconductor layer and electrically connected to the first region, the second region, and the first electrode, and a third electrode electrically connected to the third region.

公开(公告)号：US10720525B2

公开(公告)日：2020-07-21

申请号：US16357823

申请日：2019-03-19

Applicant: ROHM CO., LTD.

Inventor： Yusuke Kubo

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/36 ,  H01L29/16 ,  H01L29/08 ,  H01L29/10

Abstract: A semiconductor device includes: a semiconductor layer of a first conductive type having a first surface and a second surface opposite to the first surface; a body region of a second conductive type selectively formed on the first surface of the semiconductor layer; a source region of the first conductive type formed inside the body region; a gate electrode opposing part of the body region via a gate insulating film; a column layer of the second conductive type formed at the second surface side with respect to the body region; an embedded electrode embedded in the column layer such that the embedded electrode is electrically isolated from the column layer; and a first electrode electrically connected to the embedded electrode.