SEMICONDUCTOR PROCESSING APPARATUS

    公开(公告)号:US20240404780A1

    公开(公告)日:2024-12-05

    申请号:US18732344

    申请日:2024-06-03

    Abstract: A plurality of load lock chambers are provided, a predetermined valve device is controlled such that the valve device is not operated during wafer processing, a signal for permitting operation of the predetermined valve device is transmitted at a timing when the wafer processing is completed, and the valve device is operated based on the signal. Thus, while a processed wafer and an unprocessed wafer are exchanged between one load lock chamber and a processing chamber, an operation sequence of the entire semiconductor processing apparatus is controlled such that a predetermined valve device in the other load lock chamber is operated, and thus vibration does not occur during the operation of an electron optical system, thereby reducing a waiting time.

    DETECTOR AND METHOD FOR OBTAINING KIKUCHI IMAGES

    公开(公告)号:US20240047174A1

    公开(公告)日:2024-02-08

    申请号:US18357869

    申请日:2023-07-24

    Inventor: Uwe ROSSEK

    CPC classification number: H01J37/244 G01N23/203 H01J37/28 H01J37/18 H01J37/22

    Abstract: The present invention refers to a detector and a method for obtaining Kikuchi images by using electron backscatter diffraction (EBSD) or transmission Kikuchi diffraction (TKD) technique. In particular, the present invention refers to a detector comprising a detector body, a detector head with a scintillation screen and a photodetector with a active surface for detecting Kikuchi patterns, and means configured to move the detector head with respect to the detector body. The method comprises obtaining a first and a second Kikuchi pattern, and moving the detector head after obtaining the first Kikuchi pattern and prior obtaining the second Kikuchi pattern.

    Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage

    公开(公告)号:US11626267B2

    公开(公告)日:2023-04-11

    申请号:US17243478

    申请日:2021-04-28

    Abstract: A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

    WORKSTATION, PREPARATION STATION AND METHOD FOR MANIPULATING AN ELECTRON MICROSCOPY GRID ASSEMBLY

    公开(公告)号:US20230073506A1

    公开(公告)日:2023-03-09

    申请号:US17797432

    申请日:2021-02-04

    Abstract: The invention relates to a workstation (1), a preparation station (2) and a method for manipulating an electron microscopy grid assembly (3). The workstation (1) comprises a first compartment (101), a first gas inlet (102) for generating an overpressure in the first compartment (101), a first glove (104) and a second glove (105), each being fixed in a respective opening (106, 107) of the workstation (1), wherein the first glove (104) and the second glove (105) are movable in the first compartment (101) to manipulate objects in the first compartment (101), wherein the workstation (1) comprises a port (109) for providing a transfer device (4) for an electron microscopy grid assembly (3) in the first compartment (101). The preparation station (2) comprises a coolant reservoir (201, 202), a first part (210) configured to hold a shuttle (6) for holding an electron microscopy grid assembly (3) in a fixed orientation, wherein the preparation station (2) is configured such that the first part (210) is submergable in the cryogenic coolant when the coolant reservoir (201, 202) contains the cryogenic coolant.

    CERAMIC COATING SYSTEM AND METHOD
    10.
    发明申请

    公开(公告)号:US20230048603A1

    公开(公告)日:2023-02-16

    申请号:US17535097

    申请日:2021-11-24

    Applicant: Chang Hoon LEE

    Inventor: Chang Hoon LEE

    Abstract: A ceramic coating system using an atmospheric pressure plasma generator is provided, which includes a vacuum chamber configured to maintain a vacuum therein, a support disposed inside the vacuum chamber and fixedly supporting a substrate, a plasma generator that generates active species through plasma discharge and includes a nozzle part wherein at least a portion of the nozzle part is disposed to face the substrate inside the vacuum chamber, and a particle providing apparatus that transfers ceramic particles to one side of the nozzle part.

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