PARABOLIC CASSEGRAIN-TYPE REFLECTOR FOR ABLATION LOADING

    公开(公告)号:US20240019614A1

    公开(公告)日:2024-01-18

    申请号:US18472835

    申请日:2023-09-22

    IPC分类号: G02B5/10 G21K5/00

    CPC分类号: G02B5/10 G21K5/00

    摘要: Aspects of the present disclosure describe techniques for using a parabolic Cassegrain-type reflector for ablation. For example, a system for ablation loading of a trap is described that includes a reflector having a hole aligned with a loading aperture of the trap, and an atomic source positioned at a focal point of the reflector, where one or more laser beams are reflected from a reflective front side of the reflector and focused on a surface of the atomic source to produce an atomic plume, and the atomic plume once produced passing through the hole in the reflector and through a loading aperture of the trap for loading the trap. A method for ablation loading of a trap within a chamber in a trapped ion system is also described.

    Method of annealing reflective photomask by using laser

    公开(公告)号:US11506968B2

    公开(公告)日:2022-11-22

    申请号:US16911601

    申请日:2020-06-25

    摘要: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

    Hessian-free calculation of product of Hessian matrix and vector for lithography optimization

    公开(公告)号:US10571799B1

    公开(公告)日:2020-02-25

    申请号:US16113183

    申请日:2018-08-27

    申请人: ASML US, INC. LLC

    摘要: A method for optimizing a binary mask pattern includes determining, by a processor, an evaluation value based on a comparison between a design pattern and a substrate pattern simulated based on the binary mask pattern. The method also includes, based on the evaluation value, using, by the processor, a gradient-based optimization method to generate a first adjusted binary mask pattern. The method also includes determining, by the processor, a first updated evaluation value based on a comparison between the design pattern and a first updated substrate pattern simulated based on the first adjusted binary mask pattern. The method also includes, based on the first updated evaluation value, using, by the processor, a product of a Hessian matrix and an arbitrary vector to generate a second adjusted binary mask pattern. The method also includes simulating, by the processor, a second updated substrate pattern based on the second adjusted binary mask pattern.