VAPORIZER
    3.
    发明公开
    VAPORIZER 审中-公开

    公开(公告)号:US20240353094A1

    公开(公告)日:2024-10-24

    申请号:US18689367

    申请日:2022-08-31

    Inventor: Akira Sasaki

    Abstract: This vaporizer comprises: a vaporizing unit for vaporizing a precursor to generate a material gas; a gas flow passageway for guiding the generated material gas to the outside of the vaporizing unit; a first heater for heating the vaporizing unit but not heating the gas flow passageway; and a second heater for heating both the vaporizing unit and the gas flow passageway. In variations, one of the first heater and the second heater has a planar shape, and include a portion having a large power consumption and a portion having a small power consumption per unit area.

    Apparatus and method for treating a relief plate precursor having a transport system

    公开(公告)号:US12078932B2

    公开(公告)日:2024-09-03

    申请号:US17050112

    申请日:2019-04-23

    Inventor: Bart Wattyn

    CPC classification number: G03F7/3064 B41C1/02 B41N3/00 B41N3/006 G03F7/26

    Abstract: An apparatus for treating a relief plate precursor, such as a printing plate precursor, preferably with a liquid. The apparatus includes a transport system with at least one, preferably at least two transport bars; a plate coupling station configured for coupling a relief plate precursor to the transport bar; a treatment compartment configured for treating the relief plate precursor; and a plate decoupling station configured for decoupling the treated relief plate precursor from the transport bar. The transport system is configured to automatically move each transport bar, after being coupled to a relief plate precursor in the plate coupling station, from the plate coupling station through the treatment station to the plate decoupling station, and, after being decoupled from a treated relief plate precursor, from the plate decoupling station back to the plate coupling station, such that the transport bar moves in a closed loop through the apparatus.

    PHOTORESIST UNDERLAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

    公开(公告)号:US20230393474A1

    公开(公告)日:2023-12-07

    申请号:US18231447

    申请日:2023-08-08

    CPC classification number: G03F7/094 G03F7/039 C08L101/02 G03F7/0042 G03F7/26

    Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

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