公开(公告)号：US12110580B2

公开(公告)日：2024-10-08

申请号：US18148197

申请日：2022-12-29

申请人： Oerlikon Surface Solutions AG, Pfäffikon

发明人： Denis Kurapov ,  Siegfried Krassnitzer

IPC分类号： C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/0057 ,  C23C14/024 ,  C23C14/0664 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3426 ,  H01J37/3467

摘要： A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas, preferably argon, and at least nitrogen gas as the reactive gas, wherein:



the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or
at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere having only nitrogen gas as the reactive gas, wherein the Ti targets are preferably operated by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.

公开(公告)号：US12105308B2

公开(公告)日：2024-10-01

申请号：US17661032

申请日：2022-04-27

申请人： HOYA Optical Labs of America, Inc.

发明人： James Mulligan ,  Michael Boulineau ,  Jeffrey Brown ,  Jared Johnson ,  Michael Marshall ,  Sandy Goebel ,  Joseph Leaman

IPC分类号： G02B5/30 ,  C23C14/08 ,  C23C14/34 ,  G02C7/12

CPC分类号： G02B5/3016 ,  C23C14/08 ,  C23C14/34 ,  G02C7/12

摘要： The present invention relates to a polarization filter for ophthalmic lenses. The polarization filter comprises a mesogen layer coated onto a retardation film, either directly or through an adhesive layer. The present invention further discloses that the polarization filter formed by employing a thin film or sheet, having a defined level of retardation between the light source and the mesogen layer, for example, a cholesteric mesogen layer, the multilayered laminate structure demonstrates linear polarization of the light transmitted through the mesogen laminate structure, and, hence, can be used in ophthalmic lenses, e.g. spectacle or eyeglass lenses. The polarization filter enhances the performance by allowing transmission of the polarization filter closer to the theoretical maximum transmission.

公开(公告)号：US20240318303A1

公开(公告)日：2024-09-26

申请号：US18580544

申请日：2022-09-20

申请人： Shibaura Machine Co., Ltd.

发明人： Kazuhiro FUKADA ,  Yoshiaki KURIHARA ,  Takeshi NAMBA ,  Satoshi FUKUYAMA ,  Mitsunori KOKUBO

IPC分类号： C23C14/56 ,  C23C14/34 ,  C23C14/50

CPC分类号： C23C14/568 ,  C23C14/34 ,  C23C14/50 ,  C23C14/566

摘要： A surface treatment apparatus includes a placement part on which a workpiece is placed, a first housing part, a second housing part, and a conveyance part. The first housing part houses the workpiece placed on the placement part. The second housing part houses the workpiece placed on the placement part. The second housing part includes a surface treatment part performing at least one type of surface treatment. The conveyance part conveys the workpiece placed on the placement part in a longitudinal direction of the first housing part or the second housing part. The surface treatment apparatus performs surface treatment on the workpiece in a state where the second housing part is a single body or in a state where the first housing part and the second housing part are plurally coupled in a conveyance direction of the conveyance part.

公开(公告)号：US12100529B2

公开(公告)日：2024-09-24

申请号：US16270354

申请日：2019-02-07

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Hideo Hosono ,  Yoshitake Toda ,  Katsuro Hayashi ,  Setsuro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Toshinari Watanabe ,  Kazuhiro Ito

IPC分类号： H01B1/08 ,  C04B35/44 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01M4/00 ,  H10K50/82

CPC分类号： H01B1/08 ,  C04B35/44 ,  C04B35/62645 ,  C23C14/08 ,  C23C14/082 ,  C23C14/3414 ,  C23C14/35 ,  H01M4/00 ,  C04B2235/3208 ,  C04B2235/664 ,  H10K50/82

摘要： Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×1018 cm−3 and less than or equal to 2.3×1021 cm−3, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material including calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.

公开(公告)号：US12091738B2

公开(公告)日：2024-09-17

申请号：US17561841

申请日：2021-12-24

申请人： MSWAY Technology Co., Ltd.

发明人： Min Soo Lee ,  Jong Chun Park

IPC分类号： G02B5/28 ,  C23C14/02 ,  C23C14/20 ,  C23C14/34 ,  G02B5/20

CPC分类号： C23C14/024 ,  C23C14/205 ,  C23C14/34 ,  G02B5/208 ,  G02B5/282 ,  G02B5/285

摘要： A low-resistance conductive thin film is disclosed. The present invention provides a low-resistance conductive thin film including: a substrate; a first capping layer disposed on the substrate; a second capping layer disposed on the first capping layer; a metal layer disposed on the second capping layer; a third capping layer disposed on the metal layer; and a fourth capping layer disposed on the third capping layer.

公开(公告)号：US12089506B2

公开(公告)日：2024-09-10

申请号：US17578347

申请日：2022-01-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen

IPC分类号： H01L43/02 ,  C23C14/34 ,  H10N50/01 ,  H10N50/80

CPC分类号： H10N50/80 ,  C23C14/3407 ,  H10N50/01

摘要： A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

公开(公告)号：US12080591B2

公开(公告)日：2024-09-03

申请号：US17887045

申请日：2022-08-12

申请人： Renesas Electronics Corporation

发明人： Kazuyuki Omori ,  Seiji Muranaka ,  Kazuyoshi Maekawa

IPC分类号： H01L21/4763 ,  C23C14/06 ,  C23C14/16 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/76843 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/34 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

摘要： Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

公开(公告)号：US12068142B2

公开(公告)日：2024-08-20

申请号：US18195887

申请日：2023-05-10

申请人： View, Inc.

发明人： Bo Neilan ,  Michael Potter ,  Dhairya Shrivastava

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  H01L21/673 ,  H01L21/677

CPC分类号： H01J37/32715 ,  C23C14/34 ,  C23C14/50 ,  C23C14/562 ,  C23C14/568 ,  H01J37/32651 ,  H01J37/32779 ,  H01L21/6734 ,  H01L21/67712 ,  H01L21/6776 ,  H01J2237/026 ,  H01J2237/2007 ,  H01J2237/20221 ,  H01J2237/332

摘要： Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

公开(公告)号：US20240274436A1

公开(公告)日：2024-08-15

申请号：US18565486

申请日：2022-06-02

申请人： TOKYO ELECTRON LIMITED

发明人： Shota ISHIBASHI ,  Toru KITADA ,  Keiichi NAGASAKA

IPC分类号： H01L21/02 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  H01L21/67 ,  H01L29/786

CPC分类号： H01L21/02565 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/541 ,  H01L21/02658 ,  H01L21/67103 ,  H01L29/7869

摘要： Provided are a film forming method in which oxygen defects are suppressed, and a substrate processing method. Provided is a film forming method having a step for cooling a substrate to a very-low-temperature state of 200 K or less, and a step for forming an oxide semiconductor film on the cooled substrate.

公开(公告)号：US20240271271A1

公开(公告)日：2024-08-15

申请号：US18326256

申请日：2023-05-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Hsi Wang ,  Yen-Yu Chen

IPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/58 ,  H01J37/34 ,  H01L21/285 ,  H01L21/321

CPC分类号： C23C14/3492 ,  C23C14/54 ,  C23C14/588 ,  H01J37/3435 ,  H01L21/2855 ,  H01L21/3212 ,  H01J2237/24585 ,  H01J2237/332

摘要： A method for fabricating semiconductor devices is disclosed. The method includes introducing a target in a chamber of a physical vapor deposition (PVD) system. The method includes depositing, on a substrate, a first portion of a film based on a first compensation function, a first value of the first compensation function being determined according to a lifetime of the target. The method includes depositing, on the first portion of the film, a second portion of the film based on a second compensation function, a second value of the second compensation function being determined according to the lifetime of the target. The first value is different from the second value.