DOUBLE PEROVSKITE
    6.
    发明申请

    公开(公告)号:US20210230014A1

    公开(公告)日:2021-07-29

    申请号:US17167705

    申请日:2021-02-04

    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].

Patent Agency Ranking