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公开(公告)号:US12009508B2
公开(公告)日:2024-06-11
申请号:US17717931
申请日:2022-04-11
Applicant: HHeLi, LLC
Inventor: Paige L. Johnson , Jonathan G. Neff
IPC: H01M4/36 , C01G15/00 , C01G19/02 , C01G23/04 , C01G23/047 , C01G25/02 , C01G29/00 , C01G30/00 , C01G49/00 , C01G49/02 , H01M4/02 , H01M4/48 , H01M4/485 , H01M4/505 , H01M4/52 , H01M4/525 , H01M10/0525
CPC classification number: H01M4/366 , C01G15/00 , C01G19/02 , C01G23/04 , C01G23/047 , C01G25/02 , C01G29/00 , C01G30/004 , C01G49/0027 , C01G49/02 , H01M4/483 , H01M4/485 , H01M4/505 , H01M4/523 , H01M4/525 , C01P2002/50 , C01P2002/54 , C01P2004/64 , C01P2004/80 , C01P2006/40 , H01M2004/021 , H01M10/0525
Abstract: Described herein is a battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH −12, at least on its surface.
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公开(公告)号:US11958997B2
公开(公告)日:2024-04-16
申请号:US17230212
申请日:2021-04-14
Applicant: Avantama AG
Inventor: Norman Albert Lüchinger , Lin Fangjian , Tom Mitchell-Williams , Stefan Loher
IPC: H01L51/50 , C01D13/00 , C01D15/00 , C01D17/00 , C01G17/00 , C01G19/00 , C01G21/00 , C01G29/00 , C01G30/00 , C09D5/22 , C09K11/02 , C09K11/06 , C09K11/66 , F21V3/12 , F21V9/38 , G02F1/13357 , H01L33/50 , H01L33/56 , H10K50/125 , G02F1/1335
CPC classification number: C09K11/02 , C01D13/00 , C01D15/00 , C01D17/003 , C01G17/00 , C01G19/00 , C01G21/00 , C01G29/00 , C01G30/00 , C09D5/22 , C09K11/025 , C09K11/06 , C09K11/664 , F21V3/12 , F21V9/38 , G02F1/133617 , H01L33/502 , H01L33/56 , H10K50/125 , G02F1/133614 , H01L2933/0041
Abstract: Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.
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公开(公告)号:US11866629B2
公开(公告)日:2024-01-09
申请号:US17147057
申请日:2021-01-12
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor: Moungi Bawendi , Daniel Franke , Matthias Ginterseder
IPC: C09K11/88 , C09K11/08 , H01L29/06 , C01G28/00 , C01B19/04 , C01B17/20 , C01G30/00 , C01B21/072 , C01B21/06 , B82Y40/00
CPC classification number: C09K11/883 , B82Y40/00 , C01B17/20 , C01B19/04 , C01B21/0632 , C01B21/072 , C01G28/00 , C01G30/00 , C09K11/0883 , H01L29/0665
Abstract: A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.
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公开(公告)号:US20230250114A1
公开(公告)日:2023-08-10
申请号:US18165870
申请日:2023-02-07
Applicant: DNF CO., LTD.
Inventor: Yong Hee KWONE , Young Jae IM , Sang Yong JEON , Tae Seok BYUN , Sang Chan LEE , Sang Ick LEE
CPC classification number: C07F7/2284 , C01G19/02 , C01G30/005 , C07F9/902 , C23C16/407 , C23C16/45536 , C23C16/45553 , C23C16/40
Abstract: Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.
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公开(公告)号:US20220310993A1
公开(公告)日:2022-09-29
申请号:US17717931
申请日:2022-04-11
Applicant: HHeLi, LLC
Inventor: Paige L. Johnson , Jonathan G. Neff
IPC: H01M4/36 , H01M4/525 , H01M4/505 , C01G19/02 , C01G49/02 , C01G29/00 , C01G25/02 , C01G23/04 , C01G30/00 , C01G15/00 , C01G49/00 , H01M4/48 , H01M4/485 , C01G23/047 , H01M4/52
Abstract: A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH −12, at least on its surface.
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公开(公告)号:US20210230014A1
公开(公告)日:2021-07-29
申请号:US17167705
申请日:2021-02-04
Applicant: OXFORD UNIVERSITY INNOVATION LIMITED
Inventor: HENRY JAMES SNAITH , AMIR ABBAS HAGIGHIRAD , FELICIANO GIUSTINO , MARINA FILIP , GEORGE VOLONAKIS
Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
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公开(公告)号:US10944065B2
公开(公告)日:2021-03-09
申请号:US15746860
申请日:2016-07-28
Applicant: NEXDOT
Inventor: Emmanuel Lhuillier
IPC: H01L29/06 , H01L51/42 , C01B19/00 , C01G11/02 , C01G13/00 , C01G28/00 , C01G30/00 , G01J5/08 , G01J5/20 , H01L27/30 , H01L37/02 , H01L51/00 , H01L51/44
Abstract: Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S2−, HS−, Se2−, Te2−, OH−, BF4−, PF6−, Cl−, Br−, I−, As2Se3, Sb2S3, Sb2Te3, Sb2Se3, As2S3 or a mixture thereof; and wherein the absorption of the C—H bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.
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公开(公告)号:US10777363B2
公开(公告)日:2020-09-15
申请号:US15848969
申请日:2017-12-20
Inventor: Tae-Hyuk Kwon , HyeonOh Shin , Byung-Man Kim
Abstract: Provided are a hole transport material composite including a lead-free perovskite (Cs2SnI6), a liquid ionic conductor and a solvent that is a solid at a room temperature, a solar cell, and a method of manufacturing the lead-free perovskite-based hole transport material composite.
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公开(公告)号:US10381671B2
公开(公告)日:2019-08-13
申请号:US15622054
申请日:2017-06-13
Inventor: Guowang Zhou , Rujun Tao , Guanglv Yu , Hao Yu , Xiaodong Lin
IPC: H01M8/06 , H01M8/04 , H01M12/06 , H01M4/92 , H01M8/04119 , C02F1/463 , C02F1/467 , C01G30/00 , C08F14/26 , C02F1/461 , C02F101/10 , C02F101/20
Abstract: The present invention provides a method for removing pentavalent antimony contaminants in water without adding a DC power supply and also provides a fuel cell capable of removing the pentavalent antimony contaminants in water by utilizing self-generated electric energy. A technical solution of the present invention is as follows: waste water is pumped into a reactor for reaction after a pH value of the waste water containing the pentavalent antimony contaminants adjusted to 3-6.5; the inside of a reactor is an anaerobic environment; and an iron anode is arranged in the reactor, a through hole is formed in a side wall of the reactor, a cathode for reducing oxygen by electrons and protons sealed and inlaid in the through hole, and a resistor is connected between the iron anode and the cathode in series. The present invention is suitable for a water treatment technology.
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公开(公告)号:US20180282175A1
公开(公告)日:2018-10-04
申请号:US15765230
申请日:2016-09-20
Applicant: SUMITOMO METAL MINING CO., LTD.
Inventor: Hirofumi TSUNEMATSU , Kenji FUKUDA , Kenichi FUJITA
Abstract: ATO infrared absorbing fine particles having high coloring property (high light absorption property) which has both excellent dispersibility and solar radiation shielding properties and can reduce a use amount of ATO infrared ray absorbing fine particles can be provided, wherein crystal lattice constant a is 4.736 Å or more and 4.743 or less, crystal lattice constant c is 3.187 Å or more and 3.192 Å or less, and a crystallite size is 5.5 nm or more and 10.0 nm or less, which are analyzed by an X-ray diffraction measurement result.
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