公开(公告)号：US06706335B2

公开(公告)日：2004-03-16

申请号：US09865549

申请日：2001-05-29

申请人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/509 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

摘要翻译： 在使用包含硅卤化物和氢的源气体的高频等离子体CVD中，由Q = PoxPR / S / d定义的Q值为50以上，其中Po（W）为供电电力， S（cm 2）是高频引入电极的面积，d（cm）是高频引入电极和衬底之间的距离，PR（mTorr）是压力。 因此，提供了一种形成硅薄膜，硅薄膜和光电特性优异的光电元件的方法，其获得了工业实用水平的成膜速率。

公开(公告)号：US06616987B1

公开(公告)日：2003-09-09

申请号：US09676366

申请日：2000-09-29

申请人： Gregor Morfill ,  Hubertus Thomas ,  Timo Stuffler ,  Uwe Konopka

发明人： Gregor Morfill ,  Hubertus Thomas ,  Timo Stuffler ,  Uwe Konopka

IPC分类号： H05H102

CPC分类号： H01J37/32623 ,  H01J37/32321 ,  H01J37/32366

摘要： A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

摘要翻译： 用于操纵在载体或反应气体的等离子体中基本不均匀分布的颗粒的方法，其中颗粒之间的库仑相互作用非常低，使得颗粒基本上不形成等离子体结晶状态，并且颗粒以位置选择性 对外部调节力和/或等离子体条件的方式进行位置选择性改变以将至少一部分颗粒施加到无掩模的基板表面上和/或使其在载体中进行位置选择性等离子体处理 或反应气体。

公开(公告)号：US06740367B2

公开(公告)日：2004-05-25

申请号：US10328331

申请日：2002-12-23

申请人： Nobuo Matsuki ,  Yoshinori Morisada

发明人： Nobuo Matsuki ,  Yoshinori Morisada

IPC分类号： H05H102

CPC分类号： H01J37/32009 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32541

摘要： A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.

摘要翻译： 等离子体CVD膜形成装置以这样的方式在半导体衬底上形成膜，使得薄膜的膜质量和膜厚变得均匀。 用于在半导体衬底上形成薄膜的等离子体CVD膜形成装置包括真空室，位于真空室内的喷头和基本上平行于并面向真空室内的喷头的基座， 装载物体，喷头和/或基座的中心部分构成凹面电极。

公开(公告)号：US06599588B2

公开(公告)日：2003-07-29

申请号：US10051831

申请日：2002-01-16

申请人： Wen-Shan Chien

发明人： Wen-Shan Chien

IPC分类号： H05H102

CPC分类号： C23C16/0254 ,  C23C16/402

摘要： A method for treating a metal enclosure to prevent the enclosure from being contaminated, comprises the steps of: (a) sand-blasting the enclosure; (b) preheating the enclosure to a predetermined temperature, and putting the enclosure into the space in a vacuum chamber between two electrodes; (c) introducing reactive gases into the vacuum chamber, the reactive gases including 1,1,3,3-tetramethyldisiloxane and oxygen; (d) applying high electrical power to the electrodes to cause the reactive gases to become an ionized plasma, the plasma reacting with a surface of the enclosure to form a layer of silicon oxide thereon. The layer of silicon oxide resists formation of a fingerprint when it is touched by a user.

摘要翻译： 一种用于处理金属外壳以防止外壳被污染的方法，包括以下步骤：（a）对外壳进行喷砂处理; （b）将外壳预热到预定温度，并将外壳放入位于两个电极之间的真空室中的空间中; （c）将反应气体引入真空室，反应气体包括1,1,3,3-四甲基二硅氧烷和氧; （d）向电极施加高电力以使反应气体变成电离等离子体，等离子体与外壳的表面反应，在其上形成氧化硅层。 当氧化硅层被使用者触摸时，其形成指纹。

公开(公告)号：US06396213B1

公开(公告)日：2002-05-28

申请号：US09046709

申请日：1998-03-24

申请人： Paul M. Koloc

发明人： Paul M. Koloc

IPC分类号： H05H102

CPC分类号： H05H1/52 ,  H05H1/04 ,  H05H1/54

摘要： A compound plasma configuration can be formed from a device having pins, and an annular electrode surrounding the pins. A cylindrical conductor is electrically connected to, and coaxial with, the annular electrode, and a helical conductor coaxial with the cylindrical conductor. The helical conductor is composed of wires, each wire electrically connected to each pin. The annular electrode and the pins are disposed in the same direction away from the interior of the conducting cylinder.

摘要翻译： 复合等离子体构造可以由具有销的装置和围绕销的环形电极形成。 圆柱形导体与环形电极电连接并与其同轴，以及与圆柱形导体同轴的螺旋导体。 螺旋导体由导线组成，每根导线与每个引脚电连接。 环形电极和销以与导电筒的内部相同的方向设置。

公开(公告)号：US06180019B2

公开(公告)日：2001-01-30

申请号：US08979949

申请日：1997-11-26

申请人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

发明人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

IPC分类号： H05H102

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321

摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

摘要翻译： 通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。 法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除 等离子体点火后。 在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

公开(公告)号：US06664739B1

公开(公告)日：2003-12-16

申请号：US10030169

申请日：2002-06-21

申请人： Michael Kishinevsky ,  Andrew Shablin

发明人： Michael Kishinevsky ,  Andrew Shablin

IPC分类号： H05H102

CPC分类号： H01J37/08

摘要： The invention pertains to the use of enhanced electron emitting surfaces to increase the supply of electrons in a thin film deposition system including the ion source in order to enhance the deposition rates of thin film materials. The use of enhanced electron emitting surfaces reduces the erosion of component parts in the ion source while increasing the rate and quality of the film deposited on the substrate. Allowing for ion source operation at lower gas pressure also increases the range of cold-cathode applications and improving operation at all pressures. The cathode section of the ion source is comprised of a reactive material that upon reaction with a reactive gas forms an insulating thin film on the cathode surface that provides an addition source of electrons for the ion beam source. Also, electron emitters located outside of the ion beam source have cathode sections that comprise enhanced electron emitting surfaces to provide electron flow to the ion beam.

摘要翻译： 本发明涉及使用增强的电子发射表面来增加包括离子源在内的薄膜沉积系统中的电子供应，以增强薄膜材料的沉积速率。 使用增强的电子发射表面减少离子源中组分部分的侵蚀，同时增加沉积在基底上的膜的速率和质量。 允许在较低气体压力下的离子源操作也增加了冷阴极应用的范围并改善了在所有压力下的操作。 离子源的阴极部分包括反应性材料，反应性材料在反应气体反应时在阴极表面上形成绝缘薄膜，为离子束源提供电子加成源。 此外，位于离子束源外部的电子发射体具有包括增强的电子发射表面以提供电子流到离子束的阴极部分。

公开(公告)号：US06541282B1

公开(公告)日：2003-04-01

申请号：US09594187

申请日：2000-06-13

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H05H102

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O; at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O的反应制备的; 在约10W至约150W的恒定RF功率水平或在占空比的10％至30％期间从约20W至约250W的脉冲RF功率水平。

公开(公告)号：US06376028B1

公开(公告)日：2002-04-23

申请号：US09509471

申请日：2000-07-24

申请人： Jacques Laurent ,  Pierre Fayet ,  Robert Devidal

发明人： Jacques Laurent ,  Pierre Fayet ,  Robert Devidal

IPC分类号： H05H102

CPC分类号： H01J37/32623 ,  C23C16/045 ,  C23C16/402 ,  C23C16/511 ,  H01J37/3266 ,  Y10S428/926 ,  Y10T428/265 ,  Y10T428/31786

摘要： The described device is introduced into a plastic container with a narrow opening and serves a plasma enhanced process for treating the inside surface of the container. The device (2) extends between the container opening and the container bottom along the container axis (X) and comprising a gas feed tube (23) for feeding a process gas into the container and permanent magnets (24) for establishing a stationary magnetic field inside the container. The magnets (24) form a column of superimposed magnets which is arranged inside the gas feed tube (23). The north and south poles of each magnet are positioned on opposite sides of the container axis (X). The device may also comprise cooling means (25) for cooling the gas feed tube and the magnets. Preferably the plasma used in the plasma enhanced process is sustained by microwaves or radio frequency waves and the magnets (24) are preferably designed such that electron-cyclotron-resonance conditions are established in an area distanced from the container inner surface by 0 to 30 mm.

摘要翻译： 将所述装置引入具有窄开口的塑料容器中，并且用于处理容器内表面的等离子体增强方法。 装置（2）沿着容器轴线（X）在容器开口和容器底部之间延伸，并且包括用于将处理气体输送到容器中的气体供给管（23）和用于建立静止磁场的永久磁铁（24） 在容器内 磁体（24）形成排列在气体供给管（23）内的重叠磁体列。 每个磁体的北极和南极位于容器轴线（X）的相对侧。 该装置还可以包括用于冷却气体供给管和磁体的冷却装置（25）。 优选地，等离子体增强过程中使用的等离子体由微波或射频波维持，并且磁体（24）优选地被设计成使电子回旋共振条件建立在远离容器内表面的区域内0至30mm 。

公开(公告)号：US06316062B1

公开(公告)日：2001-11-13

申请号：US09508836

申请日：2000-03-17

申请人： Ryuji Sakaguchi ,  Kazuo Kobayashi ,  Hiroshi Sakai ,  Mikio Suzuki ,  Kenichi Yoneyama ,  Kazunori Ohnami

发明人： Ryuji Sakaguchi ,  Kazuo Kobayashi ,  Hiroshi Sakai ,  Mikio Suzuki ,  Kenichi Yoneyama ,  Kazunori Ohnami

IPC分类号： H05H102

CPC分类号： G11B5/85 ,  C23C16/26 ,  G11B5/72 ,  G11B5/725 ,  G11B5/8408

摘要： The present invention provides a method for manufacturing a magnetic recording medium comprising the steps of forming a carbon protective film onto a disc, the non-magnetic substrate of which is layered with a non-magnetic base film and magnetic film, using a reactant gas containing carbon atoms as a starting material, according to a plasma CVD method, wherein a mixed gas of hydrocarbon and hydrogen, in which the mixing ratio of hydrocarbon to hydrogen is in the range of 2 to 1˜1 to 100 by volume, is used as a reactant gas, during bias applying to said disc. In addition, the present invention provides a magnetic recording medium comprising a carbon protective film formed onto a disc, the non-magnetic substrate of which is layered with a non-magnetic base film and magnetic film, wherein said carbon protective film is formed according to a plasma CVD method, while applying bias.

摘要翻译： 本发明提供一种制造磁记录介质的方法，包括以下步骤：在非磁性基板上用非磁性基膜和磁性薄膜层叠形成碳保护膜，使用含有 碳原子作为起始原料，根据等离子体CVD法，其中烃与氢的混合比在烃与氢的混合比在2至1至1至100的范围内的混合气体用作 在施加到所述盘的偏压期间反应气体。 此外，本发明提供一种磁记录介质，其包含形成在盘上的碳保护膜，其非磁性基板与非磁性基膜和磁性膜层叠，其中所述碳保护膜根据 等离子体CVD法，同时施加偏压。