公开(公告)号：US06664739B1

公开(公告)日：2003-12-16

申请号：US10030169

申请日：2002-06-21

申请人： Michael Kishinevsky ,  Andrew Shablin

发明人： Michael Kishinevsky ,  Andrew Shablin

IPC分类号： H05H102

CPC分类号： H01J37/08

摘要： The invention pertains to the use of enhanced electron emitting surfaces to increase the supply of electrons in a thin film deposition system including the ion source in order to enhance the deposition rates of thin film materials. The use of enhanced electron emitting surfaces reduces the erosion of component parts in the ion source while increasing the rate and quality of the film deposited on the substrate. Allowing for ion source operation at lower gas pressure also increases the range of cold-cathode applications and improving operation at all pressures. The cathode section of the ion source is comprised of a reactive material that upon reaction with a reactive gas forms an insulating thin film on the cathode surface that provides an addition source of electrons for the ion beam source. Also, electron emitters located outside of the ion beam source have cathode sections that comprise enhanced electron emitting surfaces to provide electron flow to the ion beam.

摘要翻译： 本发明涉及使用增强的电子发射表面来增加包括离子源在内的薄膜沉积系统中的电子供应，以增强薄膜材料的沉积速率。 使用增强的电子发射表面减少离子源中组分部分的侵蚀，同时增加沉积在基底上的膜的速率和质量。 允许在较低气体压力下的离子源操作也增加了冷阴极应用的范围并改善了在所有压力下的操作。 离子源的阴极部分包括反应性材料，反应性材料在反应气体反应时在阴极表面上形成绝缘薄膜，为离子束源提供电子加成源。 此外，位于离子束源外部的电子发射体具有包括增强的电子发射表面以提供电子流到离子束的阴极部分。