公开(公告)号：US08425786B2

公开(公告)日：2013-04-23

申请号：US12700903

申请日：2010-02-05

申请人： Makoto Satake ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Tsutomu Tetsuka ,  Tatehito Usui ,  Ryoji Nishio

发明人： Makoto Satake ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Tsutomu Tetsuka ,  Tatehito Usui ,  Ryoji Nishio

IPC分类号： B44C1/22 ,  C25F3/00

CPC分类号： G11B5/84 ,  C23F4/00 ,  H01F10/14 ,  H01F10/16 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L43/12

摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

摘要翻译： 在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属， 用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时 功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

公开(公告)号：US20100294315A1

公开(公告)日：2010-11-25

申请号：US12849255

申请日：2010-08-03

申请人： Kazuyuki Ikenaga ,  Tsutomu Tetsuka ,  Muneo Furuse

发明人： Kazuyuki Ikenaga ,  Tsutomu Tetsuka ,  Muneo Furuse

IPC分类号： B08B5/04

CPC分类号： H01L21/67028 ,  C23C16/4407 ,  H01L21/67092

摘要： A cleaning method using a cleaning apparatus having an adhesive sheet, a conductive sheet in contact with a base material of the adhesive sheet, and a pressing member for pressing the conductive sheet onto the adhesive sheet. The pressing member includes a voltage applier, and a pressing force controller which presses the adhesive sheet onto a curved surface of a portion to be cleaned of a vacuum processing apparatus from above the conductive sheet. The method includes pressing the pressing member by a pressing force controlled via the pressing force controller to press the conductive sheet and the adhesive sheet to adhere an adhesive surface of the adhesive sheet to the curved surface of the portion to be cleaned, and applying a voltage to the conductive sheet or applying a voltage having a temporally changed polarity.

摘要翻译： 使用具有粘合片的清洁装置，与粘合片的基材接触的导电片的清洁方法和用于将导电片压在粘合片上的按压部件。 按压构件包括电压施加器和压力控制器，该压力控制器从导电片的上方将粘合片压在真空处理设备的待清洁部分的弯曲表面上。 该方法包括：通过压力控制器控制的按压力来按压按压部件，按压导电片和粘合片，将粘合片的粘合面粘合到被清扫部的弯曲面上， 或者施加具有时间上改变的极性的电压。

公开(公告)号：US20090165951A1

公开(公告)日：2009-07-02

申请号：US12400266

申请日：2009-03-09

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

IPC分类号： C23F1/08

CPC分类号： H01J37/3299 ,  H01J37/32183 ,  H01J37/32211 ,  H01J37/32935

摘要： A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.

摘要翻译： 等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。 高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。 用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。 匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

公开(公告)号：US20080180030A1

公开(公告)日：2008-07-31

申请号：US11680011

申请日：2007-02-28

申请人： Tsutomu Tetsuka ,  Tadayoshi Kawaguchi

发明人： Tsutomu Tetsuka ,  Tadayoshi Kawaguchi

IPC分类号： H05H1/00

CPC分类号： H01J37/32467 ,  H01J37/32495 ,  H01J37/32522

摘要： A plasma processing apparatus includes a vacuum container, a processing chamber arranged in the vacuum container and supplied with a processing gas, a holding electrode arranged in the processing chamber for holding a sample to be processed, on the upper surface thereof, an electric field supply unit for supplying an electric field and a magnetic field supply unit for supplying a magnetic field to form the plasma in the space above the holding electrode in the processing chamber, and a grounded wall member making up the inner wall, substantially in the shape of a truncated cone, of the processing chamber above the holding electrode.

摘要翻译： 一种等离子体处理装置，包括真空容器，设置在真空容器中并供给处理气体的处理室，设置在处理室中用于保持待处理样品的保持电极，其上表面具有电场供给 用于提供电场的单元和用于在处理室中的保持电极上方的空间中提供磁场以形成等离子体的磁场供应单元，以及构成内壁的接地壁构件，基本上为 处理室的截头锥体在保持电极上方。

公开(公告)号：US06899766B2

公开(公告)日：2005-05-31

申请号：US10781689

申请日：2004-02-20

申请人： Go Miya ,  Junichi Tanaka ,  Tsutomu Tetsuka ,  Hideyuki Yamamoto

发明人： Go Miya ,  Junichi Tanaka ,  Tsutomu Tetsuka ,  Hideyuki Yamamoto

IPC分类号： C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/00 ,  B08B3/12 ,  C23C16/00 ,  H05H1/00

CPC分类号： H01L21/67288 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32935

摘要： A method of diagnosing a semiconductor processing apparatus for imparting plasma treatment to a sample arranged in a vacuum process chamber, which apparatus includes a plasma generator for generating plasma inside the vacuum process chamber and process gas introducer for introducing a process gas into the vacuum process chamber, includes the steps of imparting mechanical oscillation to the semiconductor processing apparatus and detecting mechanical oscillation generated by the step of imparting mechanical oscillation inside the semiconductor processing apparatus.

摘要翻译： 一种诊断用于对设置在真空处理室中的样品施加等离子体处理的半导体处理装置的方法，该装置包括用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室 包括以下步骤：向半导体处理装置施加机械振荡，并且检测通过在半导体处理装置内部施加机械振荡的步骤产生的机械振荡。

公开(公告)号：US06755935B2

公开(公告)日：2004-06-29

申请号：US09793443

申请日：2001-02-27

申请人： Hideyuki Kazumi ,  Ichiro Sasaki ,  Kenji Maeda ,  Tsutomu Tetsuka ,  Hironobu Kawahara

发明人： Hideyuki Kazumi ,  Ichiro Sasaki ,  Kenji Maeda ,  Tsutomu Tetsuka ,  Hironobu Kawahara

IPC分类号： H01L213065

CPC分类号： H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.

摘要翻译： 等离子体处理装置具有真空容器，设置在真空容器中并供给气体的处理室，布置在处理室中的支撑电极，以支撑被处理物体;射频提供单元，用于在UHF中提供射频 或VHF频带，以及用于在处理室中产生磁场的磁场产生单元，其中所述射频提供单元包括在其与所述处理对象相对的表面中形成有凹槽或台阶的天线，由此形成高密度和高的等离子体 可以在宽参数区域中产生均匀性。

公开(公告)号：US06716301B2

公开(公告)日：2004-04-06

申请号：US09799527

申请日：2001-03-07

申请人： Seiichiro Kanno ,  Ryoji Nishio ,  Tsutomu Tetsuka ,  Junichi Tanaka ,  Hideyuki Yamamoto ,  Kazuyuki Ikenaga ,  Saburou Kanai

发明人： Seiichiro Kanno ,  Ryoji Nishio ,  Tsutomu Tetsuka ,  Junichi Tanaka ,  Hideyuki Yamamoto ,  Kazuyuki Ikenaga ,  Saburou Kanai

IPC分类号： H01L21306

CPC分类号： H01J37/32174 ,  H01J37/321 ,  H01J37/3299 ,  H01L21/31116

摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.

公开(公告)号：US06180019B2

公开(公告)日：2001-01-30

申请号：US08979949

申请日：1997-11-26

申请人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

发明人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

IPC分类号： H05H102

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321

摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

摘要翻译： 通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。 法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除 等离子体点火后。 在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

公开(公告)号：US08926790B2

公开(公告)日：2015-01-06

申请号：US11508187

申请日：2006-08-23

申请人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

发明人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/505

CPC分类号： H01J37/32082 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32504 ,  H01J37/32559

摘要： The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.

摘要翻译： 本发明提供一种等离子体处理装置，旨在抑制由构成高频电极和气体供应单元的部件的等离子体损伤引起的反应性气体和重金属污染引起的腐蚀。 等离子体处理装置包括用于对处理基板4进行等离子体处理的处理室1，用于将气体供给到处理室1的气体供给装置17,16和11以及用于提供高频辐射的天线电极10 气体产生等离子体，其中气体供给装置包括在暴露于等离子体的表面上具有气体排放孔的气体喷淋板11和暴露于构成天线电极侧的气体的导体10的一部分或整个表面 气体供给装置经受不含重金属的陶瓷喷涂以形成保护膜12。

公开(公告)号：US20130200042A1

公开(公告)日：2013-08-08

申请号：US13840663

申请日：2013-03-15

申请人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

发明人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  C23F4/00 ,  H01F10/14 ,  H01F10/16 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L43/12

摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

摘要翻译： 在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属， 用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时 功率高，当天线功率低时，含有C和O的气体进入真空电抗器。