公开(公告)号：US07638441B2

公开(公告)日：2009-12-29

申请号：US11853273

申请日：2007-09-11

申请人： Yoshinori Morisada ,  Nobuo Matsuki ,  Kamal Kishore Goundar

发明人： Yoshinori Morisada ,  Nobuo Matsuki ,  Kamal Kishore Goundar

IPC分类号： H01L21/30

CPC分类号： H01L21/0337 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3146

摘要： A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.

摘要翻译： 一种方法通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜。 该方法包括以下步骤：使沸点为约1的含烃液体单体（其中α和β为5或更多的天然数;γ为包括零的整数; X为O，N或F）的烃类液体单体 20℃至约350℃。 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。 液体单体是不饱和的，没有苯结构。

公开(公告)号：US07354873B2

公开(公告)日：2008-04-08

申请号：US11465751

申请日：2006-08-18

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02348 ,  H01L2924/12044

摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US20070065597A1

公开(公告)日：2007-03-22

申请号：US11227525

申请日：2005-09-15

申请人： Shintaro Kaido ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

发明人： Shintaro Kaido ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/5096 ,  C23C16/042 ,  H01J37/32623

摘要： A plasma CVD apparatus for forming a thin film on a wafer having diameter Dw and thickness Tw, includes: a vacuum chamber; a shower plate; a top plate; a top mask portion for covering a top surface peripheral portion of the wafer; and a side mask portion for covering a side surface portion of the wafer. The side mask portion has an inner diameter of Dw+α, and the top mask portion is disposed at a clearance of Tw+β between a bottom surface of the top mask portion and a wafer-supporting surface of the top plate, wherein α is more than zero, and β is more than zero.

摘要翻译： 在具有直径Dw和厚度Tw的晶片上形成薄膜的等离子体CVD装置包括：真空室; 淋浴板 顶板 用于覆盖晶片的顶表面周边部分的顶部掩模部分; 以及用于覆盖晶片的侧表面部分的侧面掩模部分。 侧面罩部分具有Dw +α的内径，并且顶部掩模部分设置在顶部掩模部分的底表面和顶板的晶片支承表面之间的Tw +β间隙处，其中α是 超过零，beta超过零。

公开(公告)号：US20070004204A1

公开(公告)日：2007-01-04

申请号：US11465751

申请日：2006-08-18

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02348 ,  H01L2924/12044

摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US06759344B2

公开(公告)日：2004-07-06

申请号：US10309401

申请日：2002-12-03

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC分类号： H01L2131

CPC分类号： C23C16/45523 ,  C23C16/401

摘要： An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

摘要翻译： 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

公开(公告)号：US06631692B1

公开(公告)日：2003-10-14

申请号：US09531254

申请日：2000-03-17

申请人： Nobuo Matsuki ,  Yoshinori Morisada

发明人： Nobuo Matsuki ,  Yoshinori Morisada

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32541

摘要： A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.

摘要翻译： 等离子体CVD膜形成装置以这样的方式在半导体衬底上形成膜，使得薄膜的膜质量和膜厚变得均匀。 用于在半导体衬底上形成薄膜的等离子体CVD膜形成装置包括真空室，位于真空室内的喷头和基本上平行于并面向真空室内的喷头的基座， 加工对象物，喷头和/或基座的中心部分构成凹面电极。

公开(公告)号：US06537928B1

公开(公告)日：2003-03-25

申请号：US10079078

申请日：2002-02-19

申请人： Nobuo Matsuki ,  Seijiro Umemoto ,  Yasuyoshi Hyodo

发明人： Nobuo Matsuki ,  Seijiro Umemoto ,  Yasuyoshi Hyodo

IPC分类号： H01L2131

CPC分类号： H01J37/32522 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02359

摘要： A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.

摘要翻译： CVD设备包括（i）反应室; （ii）反应气体入口; （iii）放置半导体衬底的下层; （iv）用于等离子体激发的上电极; （v）具有反应气体通过的多个孔的中间电极，其中在上部电极和中间电极之间形成反应空间; 和（vi）设置在所述中间电极和所述下层之间的冷却板，其中在所述中间电极和所述冷却板之间形成过渡空间，并且在所述冷却板和所述下层之间形成无等离子体空间。

公开(公告)号：US06432846B1

公开(公告)日：2002-08-13

申请号：US09691376

申请日：2000-10-18

申请人： Nobuo Matsuki

发明人： Nobuo Matsuki

IPC分类号： B05D306

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  C08G77/00

摘要： A method for forming a silicone polymer insulation film having low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;=3, &bgr;=3 or 4, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The next step is introducing additive gas into the reaction chamber. The residence time of the material gas is lengthened by reducing the total flow of the reaction gas, in such a way as to formed a silicone polymer film having a micropore porous structure with low relative dielectric constant.

摘要翻译： 在等离子体CVD装置上应用了在半导体衬底上形成具有低相对介电常数，高热稳定性和高耐湿性的有机硅聚合物绝缘膜的方法。 第一步是将由通式SialphaObetaCxHy（α= 3，β= 3或4，x和y为整数）表示的含硅烃化合物汽化，然后将汽化的化合物引入等离子体CVD装置的反应室 。 下一步是将添加气体引入反应室。 通过减少反应气体的总流量来延长材料气体的停留时间，以形成具有低相对介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US06383955B1

公开(公告)日：2002-05-07

申请号：US09326848

申请日：1999-06-07

申请人： Nobuo Matsuki ,  Yuichi Naito ,  Yoshinori Morisada ,  Aya Matsunoshita

发明人： Nobuo Matsuki ,  Yuichi Naito ,  Yoshinori Morisada ,  Aya Matsunoshita

IPC分类号： H01L2100

CPC分类号： C09D4/00 ,  B05D1/62 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： A method for forming a silicone polymer insulation film having a low dielectric constant, high thermal stability, high humidity-resistance, and high O2 plasma resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&agr;−1(R)2&agr;−&bgr;+2(OCnH2n+1)&bgr; (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low dielectric constant.

摘要翻译： 在等离子体CVD装置上应用了在半导体衬底上形成具有低介电常数，高热稳定性，高耐湿性和高O 2等离子体电阻的有机硅聚合物绝缘膜的方法。 第一步是引入由通式SialphaOalpha-1（R）2alpha-β+ 2（OCnH2n + 1）β（α，β，x和y是整数）表示的含硅烃化合物，然后将蒸发的 化合物到等离子体CVD装置的反应室。 通过例如减少反应气体的总流量来延长材料气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US06352945B1

公开(公告)日：2002-03-05

申请号：US09326847

申请日：1999-06-07

申请人： Nobuo Matsuki ,  Yuichi Naito ,  Yoshinori Morisada ,  Aya Matsunoshita

发明人： Nobuo Matsuki ,  Yuichi Naito ,  Yoshinori Morisada ,  Aya Matsunoshita

IPC分类号： H01L2131

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S257/914 ,  C08G77/00 ,  H01L2924/00

摘要： A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O—CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low relative dielectric constant.

摘要翻译： 在等离子体CVD装置上应用了在半导体衬底上形成具有低相对介电常数，高热稳定性和高耐湿性的有机硅聚合物绝缘膜的方法。 第一步是将通式SialphaObetaCxHy（α，β，x和y为整数）表示的含硅烃化合物引入到等离子体CVD装置的反应室中。 含硅烃化合物具有至多两个O-CnH2n + 1键和至少两个与硅结合的烃基。 通过例如降低反应气体的总流量来延长材料气体的停留时间，以形成具有低相对介电常数的微孔多孔结构的硅氧烷聚合物膜。