Abstract:
The thermal conductivity of doped germanium/silicon alloy thermo-electric material is reduced, without corresponding reduction of electrical conductivity, by a process of manufacture which results in a fine grain structure, or, more significantly, as low characteristic scattering length as possible in the range 0.01 microns to 10 microns.
Abstract:
The metallic compound AuIn2 is useful as a thermometer or a refrigerant in the temperature region below 0.1*K. Its utility extends to the submillidegree Kelvin region. The thermometric parameter is its static nuclear magnetic susceptibility, which is relatively large. The refrigerating technique of adiabatic demagnetization is also applicable to the large nuclear magnetic moments of this material. The product of temperature and spinlattice relaxation time of AuIn2 is approximately constant in this temperature range and equal to 0.09 seconds-*K giving approximately 1 second relaxation time at 0.1*K and 1 minute at 1 millidegree K.
Abstract:
An alloy for a combustion liner of a gas turbine, characterized by comprising 0.03 to 0.10 weight percent of carbon, 0.3 to 1.0 weight percent of silicon, 0.50 to 3.00 weight percent of manganese, 43.0 to 50.0 weight percent of nickel, 22.0 to 30.0 weight percent of chromium, 0.10 to 0.50 weight percent of titanium, at least one of 0.005 to 0.20 weight percent of elements of cerium group in rare earth elements and 0.20 to 0.90 weight percent of niobium, and the balance iron and impurities accompanying thereto.
Abstract:
IT IS FOUND THAT AS THE SEMICONDUCTOR COMPOSITION OF AN ELECTRONIC BISTABLE SEMICONDUCTOR SWITHCHING ELEMENT THERE MAY BE EMPLOYED SULFUR OR ANY OTHER SOLID GROUP VI ELEMENT, PREFERABLY SELENIUM, IN ADMIXTURE WITH ANTIMONY WITH LESS RIGID CONTROL WITH RESPECT TO PROPORTIONS THAN IS CONVENTIONAL FOR STIBNITE SWITCHES PROVIDED THAT THE COMPOSITION IS USED IN THE FORM OF A LAYER OF A THICKNESS NO GREATER THAN 1 MM. IT IS FOUND ADVANTAGEOUS TO PROVIDE THE LAYER ON AN ELECTRODE WHICH IS OF A HIGHLY THERMALLY CONDUCTIVE MATERIAL AND HAS A CROSS-SECTIONAL AREA GREATER THAN THE CROSS-SECT
Abstract:
A method, articles and compositions are described for the direct addition of manganese metal to molten aluminum, which provide more rapid dissolution of the manganese in the aluminum than has been possible heretofore. The manganese is added to the molten aluminum in powder form (minus 14 mesh) in intimate admixture with a flux capable of forming a molten phase at the temperature of the molten aluminum to which the mixture is added. The flux, which is employed in an amount from about 3 to about 10 percent by weight of the total manganese-flux composition, contains chlorides other than those of manganese, fluorides and mixtures of such chlorides and fluorides; the preferred flux being 40 percent sodium chloride, 40 percent potassium chloride and 20 percent cryolite (Na3AlF6).
Abstract:
AN ALLOY CONTAINING AS ESSENTIAL INGREDIENTS 18% TO 28% CHROMIUM, 25% TO 50% COBALT, 18% TO 40% NICKEL AND 12.3 TO 13.5% TANTALUM HAS HIGH STRENGTH AND AN IMPROVED BALANCE OF ELONGATION AND TOUGHNESS, MAKING THE ALLOY PARTICULARLY USEFUL FOR PARTIAL DENTURE PROSTHETICS.
Abstract:
IMPROVED ALLOYS SUITABLE FOR THERMOELECTRIC APPLICATIONS AND HAVING THE GENERAL FORMULA:
(AGSBTE2)1-X+(GETE)X
WHEREIN X HAS A VALUE OF ABOUT .80 AND .85, HAVE BEEN FOUND TO POSSESS UNEXPECTEDLY HIGH THERMOELECTRIC PROPERTIES SUCH AS EFFICIENCY INDEX, AS WELL AS OTHER IMPROVED PHYSICAL PROPERTIES.
Abstract:
THE INVENTION RELATES TO A CONTACT PIECE FOR A SEMICONDUCTOR, WHEREIN SILICON CONSTITUTES AN ALLOYING COMPONENT OF THE SEMICONDUCTOR AND OF THE CONTACT PIECE, AND TO A METHOD OF ITS PRODUCTION. THE CONTACT PIECE IS PRIMARILY USED FOR CONTACTING SEMCONDUCTOR BODIES IN THERMOELECTRIC DEVICES, PARTICULARLY THERMOGENERATORS AND HAS THE GENERAL COMPOSITION: ME(I)Y ME(II)1-Y)XSI1-X WHEREIN 0.5 $Y$0.9 AND 0.05$X$0.35 AND MEI AND MEII ARE EACH A METAL OF THE IV, V, VI, VII OR VIII SECONDARY GROUPS OF THE PERIODIC TABLE WITH THE EXCEPTION OF TECHNETIUM.