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    Circuit constructions
    3.
    发明申请
    Circuit constructions 有权
    电路结构

    公开(公告)号：US20040180555A1

    公开(公告)日：2004-09-16

    申请号：US10810779

    申请日：2004-03-25

    申请人： Micron Technology, Inc.

    发明人： Cem Basceri ,  Garo J. Derderian

    IPC分类号： B65D051/18

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/28061 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659 ,  Y10S977/859

    摘要： The invention includes methods of forming regions of differing composition over a substrate. A first material having a pattern of at least one substantially amorphous region and at least one substantially crystalline region is provided over the substrate. The at least one substantially amorphous region of the first material is replaced with a second material, while the at least one substantially crystalline region is not replaced. The invention also includes a circuit construction comprising an electrically conductive material extending within openings in a substantially crystalline electrically insulative material, and in which the electrically conductive material corresponds to quantum dots.

    摘要翻译： 本发明包括在衬底上形成不同组成的区域的方法。 具有至少一个基本非晶区域和至少一个基本上结晶区域的图案的第一材料设置在该基板上。 第一材料的至少一个基本无定形区域被第二材料替代，而至少一个基本上结晶的区域不被替换。 本发明还包括电路结构，其包括在基本上结晶的电绝缘材料的开口内延伸的导电材料，并且其中导电材料对应于量子点。

    Methods of Forming Regions of Differing Composition Over a Substrate
    4.
    发明申请
    Methods of Forming Regions of Differing Composition Over a Substrate 失效
    在基体上形成不同组成区域的方法

    公开(公告)号：US20040110360A1

    公开(公告)日：2004-06-10

    申请号：US10443354

    申请日：2003-05-21

    发明人： Cem Basceri ,  Garo J. Derderian

    IPC分类号： H01L021/30

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/28061 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659 ,  Y10S977/859

    摘要： The invention includes methods of forming regions of differing composition over a substrate. A first material having a pattern of at least one substantially amorphous region and at least one substantially crystalline region is provided over the substrate. The at least one substantially amorphous region of the first material is replaced with a second material, while the at least one substantially crystalline region is not replaced. The invention also includes a circuit construction comprising an electrically conductive material extending within openings in a substantially crystalline electrically insulative material, and in which the electrically conductive material corresponds to quantum dots.

    摘要翻译： 本发明包括在衬底上形成不同组成的区域的方法。 具有至少一个基本非晶区域和至少一个基本上结晶区域的图案的第一材料设置在该基板上。 第一材料的至少一个基本无定形区域被第二材料替代，而至少一个基本上结晶的区域不被替换。 本发明还包括电路结构，其包括在基本上结晶的电绝缘材料的开口内延伸的导电材料，并且其中导电材料对应于量子点。

    Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor
    5.
    发明授权
    Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor 失效
    半导体YBCO器件和由AFM尖端局部转换的超导YBCO器件及其制造方法

    公开(公告)号：US06388268B1

    公开(公告)日：2002-05-14

    申请号：US09670315

    申请日：2000-09-26

    申请人： Byong-man Kim ,  Insang Song

    发明人： Byong-man Kim ,  Insang Song

    IPC分类号： H01L2906

    CPC分类号： H01L45/00 ,  G01Q60/40 ,  G01Q80/00 ,  H01L39/225 ,  Y10S505/702 ,  Y10S977/859

    摘要： A semiconducting yttrium-barium-copper-oxygen(YBCO) device which locally converts a semiconducting YBCO film to a nonconducting YBCO film by a conductive atomic force microscope (AFM), a superconducting YBCO device which locally converts a superconducting YBCO film to nonsuperconducting YBCO by an AFM, and manufacturing methods thereof are provided. According to a method of manufacturing a semiconducting YBCO device or a superconducting YBCO device locally converted by an AFM tip, a voltage is applied to the local region of a semiconducting YBCO channel or a superconducting YBCO channel by an AFM tip. This can produce a nonconducting YBCO region or nonsuperconducting YBCO region to thereby manufacture a tunnel junction easily without any patterning process by microfabrication including photolithography and dry/wet etching.

    摘要翻译： 通过导电原子力显微镜（AFM）将半导体YBCO膜局部转换成不导电的YBCO膜的半导体钇钡钡氧（YBCO）器件，超导YBCO器件，其将超导YBCO膜局部转换为非超导YBCO，由 提供AFM及其制造方法。 根据制造由AFM尖端局部转换的半导体YBCO器件或超导YBCO器件的方法，通过AFM尖端将电压施加到半导体YBCO通道或超导YBCO通道的局部区域。 这可以产生不导电的YBCO区域或非超导YBCO区域，从而通过微加工（包括光刻和干/湿蚀刻）容易地形成隧道结，而无需任何图案化工艺。

    Method to form uniform silicide features
    6.
    发明授权
    Method to form uniform silicide features 失效
    形成均匀硅化物特征的方法

    公开(公告)号：US06281117B1

    公开(公告)日：2001-08-28

    申请号：US09425994

    申请日：1999-10-25

    申请人： Lap Chan ,  Chaw Sing Ho ,  Fong Yau Sam Li ,  Hou Tee Ng

    发明人： Lap Chan ,  Chaw Sing Ho ,  Fong Yau Sam Li ,  Hou Tee Ng

    IPC分类号： H01L214763

    CPC分类号： H01L21/28518 ,  Y10S977/859

    摘要： A method for forming uniform ultrathin silicide features in the fabrication of an integrated circuit is described. A metal layer is deposited over the surface of a silicon semiconductor substrate. An array of heated metallic tips contact the metal layer whereby the metal layer is transformed to a metal silicide where it is contacted by the metallic tips and wherein the metal layer not contacted by the metallic tips is unreacted. The unreacted metal layer is removed leaving the metal silicide as uniform ultrathin silicide features. Alternatively, a metal acetate layer is spin-coated over the surface of a silicon semiconductor substrate. An array of heated metallic tips contacts the metal acetate layer whereby the metal acetate layer is transformed to a metal silicide where the metallic tips contact the metal acetate layer and wherein the metal acetate slayer not contacted by the metallic tips is unreacted. Or the metal acetate layer is heat treated at localized regions using a multi-array of tips aligned in a specific layout. Or the metal acetate layer is contacted by heated metallic tips under vacuum so that the metal does not oxidize. The unreacted metal acetate layer is removed leaving the metal silicide as the uniform ultrathin silicide features.

    摘要翻译： 描述了在制造集成电路中形成均匀的超薄硅化物特征的方法。 金属层沉积在硅半导体衬底的表面上。 加热的金属尖端的阵列接触金属层，由此将金属层转变为金属硅化物，在金属硅化物中金属层与金属顶端接触，并且其中不与金属尖端接触的金属层是未反应的。 除去未反应的金属层，留下金属硅化物作为均匀的超薄硅化物特征。 或者，将金属乙酸盐层旋涂在硅半导体衬底的表面上。 加热的金属尖端的阵列接触金属乙酸盐层，由此金属乙酸盐层转变为金属硅化物，其中金属尖端与金属乙酸盐层接触，并且其中未与金属尖端接触的金属乙酸盐钝化剂未反应。 或者使用在特定布局中对齐的多阵列尖端在局部区域对金属乙酸盐层进行热处理。 或者金属乙酸盐层在真空下被加热的金属尖端接触，使得金属不氧化。 除去未反应的金属乙酸盐层，留下金属硅化物作为均匀的超薄硅化物特征。

    NON-MAJORITY MQCA MAGNETIC LOGIC GATES AND ARRAYS BASED ON MISALIGNED MAGNETIC ISLANDS
    9.
    发明申请
    NON-MAJORITY MQCA MAGNETIC LOGIC GATES AND ARRAYS BASED ON MISALIGNED MAGNETIC ISLANDS 有权
    非主要MQCA磁性门阵列和基于缺陷磁性岛的阵列

    公开(公告)号：US20100315123A1

    公开(公告)日：2010-12-16

    申请号：US12816777

    申请日：2010-06-16

    申请人： Michael T. Niemier ,  Mohammad T. Alam ,  Gary H. Bernstein ,  Xiaobo Sharon Hu ,  Wolfgang Porod ,  Edit Varga

    发明人： Michael T. Niemier ,  Mohammad T. Alam ,  Gary H. Bernstein ,  Xiaobo Sharon Hu ,  Wolfgang Porod ,  Edit Varga

    IPC分类号： H03K19/21 ,  H03K19/20 ,  H01L29/82

    CPC分类号： G11C11/14 ,  B82Y10/00 ,  B82Y25/00 ,  G11C19/0808 ,  Y10S977/859 ,  Y10S977/94

    摘要： A non-majority magnetic logic gate device for use in constructing compact and power efficient logical magnetic arrays is presented. The non-majority magnetic logic gate device includes a substrate, symmetrically aligned magnetic islands (SAMIs), at least one misaligned magnetic island (MAMI), magnetic field inputs (MFIs), and at least one magnetic field output (MFO). The SAMIs and MAMI are electrically isolated from each other but are magnetically coupled to one another through their respective magnetic fringe fields. The MAMI is geometrically and/or angularly configured to exhibit a magnetization ground state bias which is dependent upon which direction the applied magnetic clock field is swept. Non-majority logic gates can be made from layouts containing the SAMIs and the MAMI which contain a smaller number of components as comparable majority logic gate layouts.

    摘要翻译： 提出了一种用于构建紧凑且功率高的逻辑磁阵列的非多数磁逻辑门装置。 非多数磁逻辑门装置包括对称对准的磁岛（SAMI），至少一个不对准磁岛（MAMI），磁场输入（MFI）和至少一个磁场输出（MFO））的衬底。 SAMI和MAMI彼此电隔离，但是通过它们各自的磁性边缘磁场彼此磁耦合。 MAMI是几何和/或成角度地构造成表现出取决于施加的磁时钟域被扫描的方向的磁化基态偏置。 非多数逻辑门可以由包含较少数量的组件的SAMI和MAMI的布局构成为可比较的多数逻辑门布局。

    Positional Diamondoid Mechanosynthesis
    10.
    发明申请
    Positional Diamondoid Mechanosynthesis 有权
    位置金刚石机械合成

    公开(公告)号：US20090093659A1

    公开(公告)日：2009-04-09

    申请号：US12204642

    申请日：2008-09-04

    申请人： Robert A. Freitas, JR. ,  Ralph C. Merkle

    发明人： Robert A. Freitas, JR. ,  Ralph C. Merkle

    IPC分类号： C07C13/615 ,  B01J19/00

    CPC分类号： C07C2/00 ,  Y10S977/859 ,  Y10S977/877 ,  C07C13/615

    摘要： The invention provides methods of using positionally controlled molecular tools in an inert environment (such as ultra high vacuum) to fabricate complex atomically precise structures, including diamond, graphite, nanotubes, fullerenes, additional sets of the selfsame molecular tools, and others. Molecular tools have atomically precise tooltips which interact directly with a workpiece to add, remove, and modify specific atoms and groups of atoms, and have handles by which they can be held and positioned; tools can be recharged after use. Specific tooltips are brought into contact with and bond to specific feedstock molecules distributed on a presentation surface, and then transfer said feedstock molecules to specific atomic sites on a workpiece using mechanosynthetic chemical reactions. Specific sites on a workpiece can be made chemically reactive, facilitating the transfer of specific groups to them. Repeated applications of molecular tools at different locations on a workpiece can build a desired atomically precise structure.

    摘要翻译： 本发明提供了在惰性环境（例如超高真空）中使用位置控制的分子工具来制造复杂的原子精确结构的方法，包括金刚石，石墨，纳米管，富勒烯，附加的一系列相同的分子工具等。 分子工具具有原子精确的工具提示，其与工件直接相互作用以添加，移除和修饰特定的原子和原子团，并具有可被保持和定位的手柄; 使用后可以对工具进行充电。 特定工具提示与分布在呈现表面上的特定原料分子接触并结合，然后使用机械合成化学反应将所述原料分子转移到工件上的特定原子位点。 工件上的特定位置可以化学反应，便于将特定组转移到它们。 分子工具在工件上不同位置的重复应用可以建立所需的原子精确结构。