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    Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
    1.
    发明授权
    Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers 有权
    用于抑制电子泄漏的多量子阱结构和量子级联激光器中阈值电流密度的降低

    公开(公告)号：US08848754B2

    公开(公告)日：2014-09-30

    申请号：US13591645

    申请日：2012-08-22

    Applicant: Dan Botez ,  Jae Cheol Shin

    Inventor： Dan Botez ,  Jae Cheol Shin

    IPC: H01S5/00 ,  H01S5/34 ,  H01S5/20 ,  H01S5/32

    CPC classification number: H01S5/2009 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/20 ,  H01S5/2013 ,  H01S5/3216 ,  H01S5/34 ,  H01S5/3402 ,  H01S5/3407 ,  H01S5/3412 ,  H01S5/3413 ,  H01S5/3418 ,  H01S5/3425

    Abstract: Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.

    Abstract translation: 提供了激光器件的半导体结构。 半导体结构具有包括电子注入器，有源区和电子提取器的量子级联激光器结构。 活性区域包括注入阻挡层，多量子阱结构和出口屏障。 多量子阱结构可以包括第一势垒，第一量子阱，第二势垒，第二量子阱和第三势垒。 第一和第二屏障的能量小于第三屏障的能量。 第二阻挡层的能量与第三阻挡层的能量之间的能量差可以大于150meV，并且第三阻挡层的能量与第二阻挡层的能量的比率可以大于1.26。

    QUANTUM CASCADE LASER
    4.
    发明申请
    QUANTUM CASCADE LASER 有权
    量子CASCADE激光

    公开(公告)号：US20110007768A1

    公开(公告)日：2011-01-13

    申请号：US12919289

    申请日：2009-02-24

    Applicant: Masamichi Yamanishi ,  Kazuue Fujita ,  Tadataka Edamura ,  Naota Akikusa

    Inventor： Masamichi Yamanishi ,  Kazuue Fujita ,  Tadataka Edamura ,  Naota Akikusa

    IPC: H01S5/34

    CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3418 ,  H01S5/34313

    Abstract: A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures 16 each including a quantum well emission layer 17 and an injection layer 18. Moreover, the unit laminate structure 16 has, in its subband level structure, an emission upper level 3, a lower level 2, and an injection level 4 of higher energy than the upper level 3, and light hv is generated by intersubband transition of electrons from the level 3 to the level 2 in the emission layer 17, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer 18. In addition, the emission layer 17 includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation. Accordingly, a quantum cascade laser capable of operation with high efficiency at high temperature can be realized.

    Abstract translation: 量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元叠层结构16的级联结构，每个包括量子阱发射层17和注入层18。 此外，单元叠层结构16在其子带层结构中具有比上层3更高能量的发射上层3，下层2和注入级4，并且通过电子的子带间转变产生光hv 从发光层17的3级到2级，发射转变后的电子经由注入层18注入后级的注入电平4.此外，发光层17包括两层以上的阱层， 并且最靠近前一级的注入层的第一阱层用作注入层形成的阱层。 因此，可以实现能够在高温下高效率地操作的量子级联激光器。

    Variable oscillation wavelength semiconduction laser device
    6.
    发明授权
    Variable oscillation wavelength semiconduction laser device 失效
    可变振荡波长半导体激光器件

    公开(公告)号：US4982408A

    公开(公告)日：1991-01-01

    申请号：US511921

    申请日：1990-04-16

    Applicant: Akira Shimizu

    Inventor： Akira Shimizu

    IPC: H01S5/062 ,  H01S5/34 ,  H01S5/40

    CPC classification number: B82Y20/00 ,  H01S5/34 ,  H01S5/4043 ,  H01S5/0622 ,  H01S5/3418 ,  H01S5/4087

    Abstract: In a semiconductor laser device for emitting a laser beam of a variable frequency depending on a current applied to the laser device, there are provided a semiconductor substrate, an optical waveguide structure formed on the substrate having two or more semiconductor light emission layers and barrier layers having a wider band gap then that of the light emission layers, alternately stacked, clad layers stacked on the opposite sides of the waveguide structure and having a lower refractive index than that of the waveguide structure, and a device for applying a current to the light emission layers, and the wave guide structure includes at least first and the second light emission layers which respectively emit lights having different wavelengths.

    Infrared generation in semiconductor lasers
    7.
    发明授权
    Infrared generation in semiconductor lasers 失效
    半导体激光器中的红外发生

    公开(公告)号：US06782020B2

    公开(公告)日：2004-08-24

    申请号：US09950458

    申请日：2001-09-10

    Applicant: Marlan O. Scully ,  Alexey A. Belyanin ,  Vitaly V. Kocharovsky ,  Vladimir V. Kocharovsky

    Inventor： Marlan O. Scully ,  Alexey A. Belyanin ,  Vitaly V. Kocharovsky ,  Vladimir V. Kocharovsky

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/1096 ,  H01S5/34 ,  H01S5/3412 ,  H01S5/3418 ,  H01S5/3419 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2302/00

    Abstract: Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.

    Abstract translation: 公开了红外产生。 产生具有与第一带间转变相关联的第一频率的第一激光场。 产生具有与第二带间转换相关联的第二频率的第二激光场。 第一激光场的产生与第二激光场的产生基本上同时发生。 从第一激光场和第二激光场产生第三激光场。 第三激光场具有与子带间过渡相关联的第三频率。 第三频率基本上等于第二频率和第一频率之间的差。

    Semiconductor optical filter and an optical communication system using the same
    8.
    发明授权
    Semiconductor optical filter and an optical communication system using the same 失效
    半导体光滤波器及其使用的光通信系统

    公开(公告)号：US5440581A

    公开(公告)日：1995-08-08

    申请号：US2276

    申请日：1993-01-08

    Applicant: Takeo Ono ,  Jun Nitta

    Inventor： Takeo Ono ,  Jun Nitta

    IPC: G02F1/015 ,  G02F1/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/34 ,  H01S5/50 ,  H01S3/08

    CPC classification number: B82Y20/00 ,  H01S5/5045 ,  H01S5/12 ,  H01S5/3418

    Abstract: A semiconductor optical filter that includes a semiconductor substrate and a laser structure formed on the substrate. The laser structure includes an active layer of a quantum well structure and a grating formed along the active layer. The active layer is constructed to have a ground state level and an energy level other than the ground state level. A saturation gain of the ground state level is set to a value less than an internal loss, and the other energy level is set to permit an increase in the amount of carriers injected into the laser structure. The laser structure is typically a distributed feedback type laser structure. Anti-reflection coatings may be formed on the end surfaces of the laser structure.

    Abstract translation: 一种半导体滤光器，包括半导体衬底和形成在衬底上的激光器结构。 激光器结构包括量子阱结构的有源层和沿有源层形成的光栅。 有源层被构造成具有基态状态电平和除基态电平以外的能级。 基态状态电平的饱和增益被设定为小于内部损耗的值，另一个能级被设定为允许注入到激光器结构中的载流子的量增加。 激光器结构通常是分布式反馈型激光器结构。 可以在激光结构的端面上形成防反射涂层。

    Semiconductor laser element having a plurality of layers emitting lights of different wavelengths, and its driving method
    10.
    发明授权
    Semiconductor laser element having a plurality of layers emitting lights of different wavelengths, and its driving method 失效
    具有多个发射不同波长的灯的多个层的半导体激光元件及其驱动方法

    公开(公告)号：US5124996A

    公开(公告)日：1992-06-23

    申请号：US663305

    申请日：1991-03-01

    Applicant: Sotomitsu Ikeda

    Inventor： Sotomitsu Ikeda

    IPC: G02B6/38 ,  H01S5/062 ,  H01S5/34 ,  H01S5/40

    CPC classification number: B82Y20/00 ,  G02B6/3805 ,  H01S5/0622 ,  H01S5/34 ,  H01S5/4043 ,  H01S5/3418 ,  H01S5/4087

    Abstract: A semiconductor laser element of which oscillation wavelength is variable at a wide range has a high operative efficiency. It comprises a substrate; a first light emitting layer provided on said substrate and including a resonance cavity, said first light emitting layer permitting the ground energy level and at least one high-order energy level; a second light emitting layer provided on said substrate and including a resonance cavity, said second light emitting layer permitting at least the ground energy level, the band gap of the ground energy level of said second light emitting layer being wider than that of the ground energy level of said first light emitting layer, and one of the band gaps of the high-order energy levels of the first light emitting layer being substantially equal to the band gap of the ground energy level of the second light emitting layer; a barrier layer disposed between said first light emitting layer and said second light emitting layer, said barrier layer having its band gap wider than those of said first and second light emitting layers; a pair of clad layers sandwiching therebetween said barrier layer and said first and second light emitting layers, said clad layers having lower refractive index than those of said first and second light emitting layers; and electrode means for injecting carrier into said first and second light emitting layers. Also disclosed is a driving method for the semiconductor laser element.

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