摘要:
Read disturb due to hot electron injection is reduced in a 3D memory device by controlling the magnitude and timing of word line and select gate ramp down voltages at the end of a sensing operation. In an example read operation, a predefined subset of word lines includes source-side and drain-side word lines. For the predefined subset of word lines, word line voltages are ramped down before the voltages of the select gates are ramped down. Subsequently, for a remaining subset of word lines, word line voltages are ramped down, but no later than the ramping down of the voltages of the select gates. The timing of the ramp down of the selected word line depends on whether it is among the predefined subset or the remaining subset. The predefined subset can include a number of adjacent or non-adjacent word lines.
摘要:
A method for performing a holding operation to a semiconductor memory array having rows and columns of memory cells, includes: applying an electrical signal to buried regions of the memory cells, wherein each of the memory cells comprises a floating body region defining at least a portion of a surface of the memory cell, the floating body region having a first conductivity type; and wherein the buried region of each memory cell is located within the memory cell and located adjacent to the floating body region, the buried region having a second conductivity type.
摘要:
A computer system with an addressable medium is disclosed. The computer system comprises an addressable medium subsystem, a microprocessor and at least one input/output device. The addressable medium subsystem includes: a control logic which has a control circuit with an address table for storing a plurality of addresses, and an access logic with a storage medium layer and an electromagnetic induction circuit. The electromagnetic induction circuit includes a plurality of coils and a plurality of rods. Each rod is surrounded by one of the coils and corresponds to one of a plurality of regions on the storage medium layer. The access logic controls the coils to access the data stored on the regions for the control logic. Each region corresponds to one of the addresses on the address table. The microprocessor and the input/output device electrically couple with the control logic. Both the microprocessor accesses instructions for executing and the input/output device accesses data via the control logic.
摘要:
A read-and-write assembly is described. The read-and-write assembly includes one or more coils and magnetizable pillars. The magnetizable pillar has a flask shape and a neck wrapped in the coil.
摘要:
A memory plane includes a keepered word line structure formed by two cooperating molded assemblies, both having recesses for accommodating loose particles of magnetically conductive, but electrically non-conductive material. A contoured word strap assembly is partially disposed in each of said molded assemblies, after which the molded assemblies are joined together whereby the peaks of the contoured word strap assemblies define tunnels in which magnetically coated wires may be inserted, thereby completing the construction of the keepered memory plane.
摘要:
A magnetic wire memory construction and method of making in which the memory comprises a plurality of stacked memory planes having memory wires inserted in aligned holes thereof. Each memory plane is fabricated using precision batch fabricated selective chemical etching techniques on a single self-supporting metal sheet so as to form pairs of insulated drive lines within the sheet looping around respective rows of a row-column matrix of memory wire receiving holes. Additional metal and magnetic layers may be provided over the surfaces of the sheets for increasing shielding and reducing memory cell disturbances.
摘要:
A method of fabricating a magnetic memory device having spaced, parallel, magnetically coated wires received within tunnels and spaced parallel word conductors crossing the magnetically coated wires at right angles and in close proximity thereto, in which a substrate is formed to have a contoured surface of elongated parallel recesses for receiving the magnetically coated wires and the word conductors are electroplated directly onto the contoured surface of the substrate to follow the shape of the substrate surface. The exposed conductive surfaces of the plated word conductors are then coated with a thin film of insulative material and the completed structure forms one side of the memory that is joined to an identical, similarly formed mating opposite dise.
摘要:
A magnetic wire memory construction comprising a plurality of stacked memory planes, each memory plane being formed from two like-formed self-supporting and rigid metal sheets in opposed relation. The sheets have channels formed therein using precision batch fabricated metal sculpturing techniques, with certain of the channels being filled with insulative material. The dimensions and locations of the channels are chosen so that precisely located memory wire receiving tunnels and corresponding insulated drive line strips perpendicular thereto are formed when the sheets are placed together in opposed relation. Memory wire elements are inserted into the tunnels which protect and shield the elements and maintain them accurately positioned with respect to one another and to the drive line strips so as to permit achieving a memory of increased density and speed of operation.
摘要:
A memory unit is disclosed in which a planar array of thin film magnetic rod structures is sandwiched between a pair of magnetic sheets. Solenoid windings wound along the length of the rod structure serve as word windings and conductive wires disposed perpendicular to the rod structures and between the sheets serve as digit windings or the plurality of bistable magnetic storage elements formed along the rod structures at the intersections of the conductive wires. The magnetization of each of the storage elements is axially switched to a predetermined one of its two stable states by simultaneously passing appropriate currents through the relevant solenoid winding and conductive wires. A plurality of such units are assembled together to form a threedimensional memory matrix. In constructing such a memory a number of magnetic sheets are placed side by side and a plurality of unbroken conductive wires are laid in grooves in the sheets each of the wires running across all the sheets. The memory is then formed by appropriate folding of the conductive wires and the sheets with the magnetic rod structures sandwiched between the sheets and the conductive wires acting as hinges.
摘要:
A coupled film magnetic memory element is disclosed which incorporates a field applying element which is disposed between a substrate and the lower of two orthogonally disposed conductors. In a preferred embodiment, a pair of closed easy axis (CEA) magnetic films are disposed about a bit conductor. These elements are disposed orthogonally relative to a word conductor and a field applying magnetic material which is disposed in underlying and coextensive relationships with the word line. A conductive substrate is disposed adjacent the field applying film and supports all the above described elements. In arrangements having fast pulse rise times, a pulse applied to the word line produces a high field in the field applying film such that for a given amount flux to be made available for switching a storage film, a substantially smaller word current is required. In addition, because the bit line is spaced further from the substrate, it presents a high impedance and consequently provides a higher sense voltage at the input of a sense amplifier.