Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines
    1.
    发明授权
    Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines 有权
    减少用于边缘字线的3D非易失性存储器中的热电子注入类型的读取干扰

    公开(公告)号:US09412463B1

    公开(公告)日:2016-08-09

    申请号:US14728634

    申请日:2015-06-02

    摘要: Read disturb due to hot electron injection is reduced in a 3D memory device by controlling the magnitude and timing of word line and select gate ramp down voltages at the end of a sensing operation. In an example read operation, a predefined subset of word lines includes source-side and drain-side word lines. For the predefined subset of word lines, word line voltages are ramped down before the voltages of the select gates are ramped down. Subsequently, for a remaining subset of word lines, word line voltages are ramped down, but no later than the ramping down of the voltages of the select gates. The timing of the ramp down of the selected word line depends on whether it is among the predefined subset or the remaining subset. The predefined subset can include a number of adjacent or non-adjacent word lines.

    摘要翻译: 通过控制字线的幅度和时序并在感测操作结束时选择栅极斜坡下降电压,在3D存储器件中减少了由于热电子注入引起的读取干扰。 在示例性读取操作中,字线的预定义子集包括源侧和漏极字线。 对于字线的预定义子集,字线电压在选择门的电压下降之前下降。 随后,对于字线的剩余子集,字线电压下降,但不迟于选择栅极的电压的斜降。 所选字线的斜坡下降的时间取决于它是否在预定义的子集或剩余子集之间。 预定义子集可以包括多个相邻或不相邻的字线。

    Computer system with addressable storage medium
    3.
    发明授权
    Computer system with addressable storage medium 失效
    具有可寻址存储介质的计算机系统

    公开(公告)号:US07969773B2

    公开(公告)日:2011-06-28

    申请号:US12270411

    申请日:2008-11-13

    申请人: Ching-Hsi Yang

    发明人: Ching-Hsi Yang

    IPC分类号: G11C11/14

    摘要: A computer system with an addressable medium is disclosed. The computer system comprises an addressable medium subsystem, a microprocessor and at least one input/output device. The addressable medium subsystem includes: a control logic which has a control circuit with an address table for storing a plurality of addresses, and an access logic with a storage medium layer and an electromagnetic induction circuit. The electromagnetic induction circuit includes a plurality of coils and a plurality of rods. Each rod is surrounded by one of the coils and corresponds to one of a plurality of regions on the storage medium layer. The access logic controls the coils to access the data stored on the regions for the control logic. Each region corresponds to one of the addresses on the address table. The microprocessor and the input/output device electrically couple with the control logic. Both the microprocessor accesses instructions for executing and the input/output device accesses data via the control logic.

    摘要翻译: 公开了一种具有可寻址介质的计算机系统。 计算机系统包括可寻址介质子系统,微处理器和至少一个输入/输出设备。 可寻址介质子系统包括:具有控制电路的控制逻辑,具有用于存储多个地址的地址表,以及具有存储介质层和电磁感应电路的存取逻辑。 电磁感应电路包括多个线圈和多个杆。 每个杆被一个线圈包围,并且对应于存储介质层上的多个区域中的一个。 访问逻辑控制线圈以访问存储在控制逻辑的区域上的数据。 每个区域对应于地址表上的一个地址。 微处理器和输入/输出设备与控制逻辑电气耦合。 微处理器访问用于执行的指令,并且输入/输出设备经由控制逻辑访问数据。

    Read-and-write assembly for fixed-address digital data access system
    4.
    发明授权
    Read-and-write assembly for fixed-address digital data access system 失效
    固定地址数字数据访问系统的读写组件

    公开(公告)号:US07697352B2

    公开(公告)日:2010-04-13

    申请号:US11558862

    申请日:2006-11-10

    申请人: Ching-Hsi Yang

    发明人: Ching-Hsi Yang

    IPC分类号: G11C7/00

    CPC分类号: G11C11/04

    摘要: A read-and-write assembly is described. The read-and-write assembly includes one or more coils and magnetizable pillars. The magnetizable pillar has a flask shape and a neck wrapped in the coil.

    摘要翻译: 描述了一个读写程序集。 读写组件包括一个或多个线圈和可磁化柱。 可磁化柱具有烧瓶形状,颈部缠绕在线圈中。

    Method of making a memory plane with powdered keepered material
    5.
    发明授权
    Method of making a memory plane with powdered keepered material 失效
    用粉状保存材料制作记忆板的方法

    公开(公告)号:US3696506A

    公开(公告)日:1972-10-10

    申请号:US3696506D

    申请日:1970-11-16

    IPC分类号: G11C11/04 H01F7/06

    CPC分类号: G11C11/04 Y10T29/49069

    摘要: A memory plane includes a keepered word line structure formed by two cooperating molded assemblies, both having recesses for accommodating loose particles of magnetically conductive, but electrically non-conductive material. A contoured word strap assembly is partially disposed in each of said molded assemblies, after which the molded assemblies are joined together whereby the peaks of the contoured word strap assemblies define tunnels in which magnetically coated wires may be inserted, thereby completing the construction of the keepered memory plane.

    摘要翻译: 存储器平面包括由两个协作的模制组件形成的保持字线结构,两个配合的模制组件都具有用于容纳导磁的但不导电的材料的松散颗粒的凹部。 一个轮廓字形带组合件部分地设置在每个所述模制组件中,之后模制组件被连接在一起,由此轮廓字形组件的顶点限定了可以插入磁性涂层的电线的隧道,从而完成了保持架 记忆平面

    Method of making a batch fabricated magnetic wire memory
    6.
    发明授权
    Method of making a batch fabricated magnetic wire memory 失效
    制造批量制造的磁条存储器的方法

    公开(公告)号:US3685145A

    公开(公告)日:1972-08-22

    申请号:US3685145D

    申请日:1969-10-08

    申请人: BUNKER RAMO

    摘要: A magnetic wire memory construction and method of making in which the memory comprises a plurality of stacked memory planes having memory wires inserted in aligned holes thereof. Each memory plane is fabricated using precision batch fabricated selective chemical etching techniques on a single self-supporting metal sheet so as to form pairs of insulated drive lines within the sheet looping around respective rows of a row-column matrix of memory wire receiving holes. Additional metal and magnetic layers may be provided over the surfaces of the sheets for increasing shielding and reducing memory cell disturbances.

    Method of fabricating a magnetic memory matrix
    7.
    发明授权
    Method of fabricating a magnetic memory matrix 失效
    制造磁记忆矩阵的方法

    公开(公告)号:US3676924A

    公开(公告)日:1972-07-18

    申请号:US3676924D

    申请日:1970-07-13

    IPC分类号: G11C11/04 H01F7/06 G11B5/62

    CPC分类号: G11C11/04 Y10T29/49069

    摘要: A method of fabricating a magnetic memory device having spaced, parallel, magnetically coated wires received within tunnels and spaced parallel word conductors crossing the magnetically coated wires at right angles and in close proximity thereto, in which a substrate is formed to have a contoured surface of elongated parallel recesses for receiving the magnetically coated wires and the word conductors are electroplated directly onto the contoured surface of the substrate to follow the shape of the substrate surface. The exposed conductive surfaces of the plated word conductors are then coated with a thin film of insulative material and the completed structure forms one side of the memory that is joined to an identical, similarly formed mating opposite dise.

    摘要翻译: 一种制造磁性存储器件的方法,其具有接收在隧道内的间隔开的平行的磁性涂层线,并且间隔开的并行字形导体以直角和非常接近的方式与磁性涂覆的线交叉,其中衬底被形成为具有 将用于接收磁性涂覆的线和字形导体的细长的平行凹槽直接电镀到衬底的轮廓表面上以跟随衬底表面的形状。 然后,镀覆文字导体的暴露的导电表面涂覆有绝缘材料的薄膜,并且完成的结构形成存储器的一侧,其连接到相同的类似形状的配对相反的形状。

    Batch fabricated magnetic memory
    8.
    发明授权
    Batch fabricated magnetic memory 失效
    批量制造磁性记忆体

    公开(公告)号:US3623037A

    公开(公告)日:1971-11-23

    申请号:US3623037D

    申请日:1969-10-08

    申请人: BUNKER RAMO

    发明人: PARKS HOWARD L

    摘要: A magnetic wire memory construction comprising a plurality of stacked memory planes, each memory plane being formed from two like-formed self-supporting and rigid metal sheets in opposed relation. The sheets have channels formed therein using precision batch fabricated metal sculpturing techniques, with certain of the channels being filled with insulative material. The dimensions and locations of the channels are chosen so that precisely located memory wire receiving tunnels and corresponding insulated drive line strips perpendicular thereto are formed when the sheets are placed together in opposed relation. Memory wire elements are inserted into the tunnels which protect and shield the elements and maintain them accurately positioned with respect to one another and to the drive line strips so as to permit achieving a memory of increased density and speed of operation.

    Strip line,folded array,thin film magnetic rod memory
    9.
    发明授权
    Strip line,folded array,thin film magnetic rod memory 失效
    条纹线,折叠阵列,薄膜磁条记忆

    公开(公告)号:US3609715A

    公开(公告)日:1971-09-28

    申请号:US3609715D

    申请日:1966-10-24

    申请人: NCR CO

    发明人: MEIER DONAL A

    CPC分类号: G11C5/04 G11C5/02 G11C11/04

    摘要: A memory unit is disclosed in which a planar array of thin film magnetic rod structures is sandwiched between a pair of magnetic sheets. Solenoid windings wound along the length of the rod structure serve as word windings and conductive wires disposed perpendicular to the rod structures and between the sheets serve as digit windings or the plurality of bistable magnetic storage elements formed along the rod structures at the intersections of the conductive wires. The magnetization of each of the storage elements is axially switched to a predetermined one of its two stable states by simultaneously passing appropriate currents through the relevant solenoid winding and conductive wires. A plurality of such units are assembled together to form a threedimensional memory matrix. In constructing such a memory a number of magnetic sheets are placed side by side and a plurality of unbroken conductive wires are laid in grooves in the sheets each of the wires running across all the sheets. The memory is then formed by appropriate folding of the conductive wires and the sheets with the magnetic rod structures sandwiched between the sheets and the conductive wires acting as hinges.

    Information storage element
    10.
    发明授权
    Information storage element 失效
    信息存储元素

    公开(公告)号:US3585616A

    公开(公告)日:1971-06-15

    申请号:US3585616D

    申请日:1968-12-24

    申请人: IBM

    发明人: MAZZEO NICHOLAS J

    CPC分类号: G11C11/04 G01L19/08 G11C11/15

    摘要: A coupled film magnetic memory element is disclosed which incorporates a field applying element which is disposed between a substrate and the lower of two orthogonally disposed conductors. In a preferred embodiment, a pair of closed easy axis (CEA) magnetic films are disposed about a bit conductor. These elements are disposed orthogonally relative to a word conductor and a field applying magnetic material which is disposed in underlying and coextensive relationships with the word line. A conductive substrate is disposed adjacent the field applying film and supports all the above described elements. In arrangements having fast pulse rise times, a pulse applied to the word line produces a high field in the field applying film such that for a given amount flux to be made available for switching a storage film, a substantially smaller word current is required. In addition, because the bit line is spaced further from the substrate, it presents a high impedance and consequently provides a higher sense voltage at the input of a sense amplifier.