摘要:
Voltages loaded onto the bit lines in a first CA section of a memory array can be latched by enabling the BLSA between the first section and a second section adjacent to the first section causing latched voltages to propagate to bit lines in the second section. Voltages propagated to the bit lines in the second section using the latches between the second section and a third section. Voltages can be propagated sequentially from section to subsequent adjacent section until a target location is reached. The scheme can be applied as a method of page-data write access in a memory chip, of which page data can be propagated sequentially from section to subsequent adjacent section until a target location is reached, and then, activating a word line in a section of the memory comprising the target location to write voltages to the memory cells at the target location.
摘要:
Provided is a memory card. The memory card includes interconnection terminals for electric connection with an external electronic machine. The interconnection terminals may be spaced from the front side of the memory card by a distance greater than the lengths of the interconnection terminals. Alternatively, the memory card may include other interconnection terminals between its front side and the former interconnection terminals. The former and latter interconnection terminals may be used for electric connection with different kinds of electronic machines.
摘要:
An electrically erasable and programmable read only memory (EEPROM) or other memory integrated circuit (IC) includes memory cells arranged in N blocks. The number of blocks, N, is selected to maximize utilization of the space available in a standard IC package. The number of blocks need not be an even power of two. More than log2(N) address bits are used to select between the blocks. A plurality of such memory ICs forms an array addressed by a memory controller, providing a number of directly addressable memory locations that need not be an even power of two. Addressing is provided for decoding chip select lines, block select lines, and other address lines. Staggered block decode lines associated with the memory blocks allow juxtaposition of the blocks to form a row in which connections are easily verified.
摘要:
A fixture for accurately positioning magnetic memory cores in an array has a top surface for receiving agitated magnetic cores and has a bottom surface for connection to a source of vacuum. The fixture comprises a flat rigid laminar metallic plate formed from a plurality of thin flexible sheets, having etched apertures, arranged in top, middle, and bottom groups, all bonded together in precise registry. The sheets of the top group and the sheets of the bottom group are the same in having rectangular apertures each dimensioned to receive a core edgewise to a depth of up to one-half of the outer diameter of the core. The sheets of the middle group have smaller apertures. The useful life of the fixture can be doubled by turning it over when the top surface becomes worn by the abrasive cores.
摘要:
A novel memory matrix and method of making same employing a support plate having formed therein recesses for receiving annular cores. The recesses include a group of conductive bars extending in each recess and above the plate surface. A group of circumscribing recesses are then provided, of a depth exceeding the core recesses but less than the plate thickness. Cores are then inserted into the recesses, and all recesses filled with an epoxy resin, up to slightly above the surface of the plate. The insulating surface is then printed with conductors interconnecting the ends of the bars as desired. The remaining metal on the other side of the support plate is then removed so that the circumscribed areas are electrically separated.