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    SEMICONDUCTOR WAFER EVALUATION METHOD AND SEMICONDUCTOR WAFER
    2.
    发明申请
    SEMICONDUCTOR WAFER EVALUATION METHOD AND SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20180292330A1

    公开(公告)日：2018-10-11

    申请号：US15765857

    申请日：2016-08-23

    Applicant: SUMCO CORPORATION

    Inventor： Keiichiro MORI

    IPC: G01N21/94 ,  G01N21/95 ,  G02B5/30

    CPC classification number: G01N21/94 ,  G01N21/9501 ,  G01N2021/8848 ,  G02B5/3075

    Abstract: A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second and third light-receiving systems.

    Optical system of a microlithographic projection exposure apparatus
    6.
    发明授权
    Optical system of a microlithographic projection exposure apparatus 有权

    公开(公告)号：US09817317B2

    公开(公告)日：2017-11-14

    申请号：US14513944

    申请日：2014-10-14

    Applicant: Carl Zeiss SMT GmbH

    Inventor： Ingo Saenger ,  Frank Schlesener

    IPC: G03F7/20 ,  G02B5/30

    CPC classification number: G03F7/70191 ,  G02B5/3066 ,  G02B5/3075 ,  G03F7/70075 ,  G03F7/70091 ,  G03F7/70108 ,  G03F7/70116 ,  G03F7/702 ,  G03F7/70566

    Abstract: The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising at least one polarization-influencing arrangement having a first reflection surface and a second reflection surface, wherein the first reflection surface and the second reflection surface are arranged at an angle of 0°±10° or at an angle of 90°±10° relative to one another, wherein light incident on the first reflection surface during the operation of the optical system forms an angle of 45°±5° with the first reflection surface, and wherein the polarization-influencing arrangement is rotatable about a rotation axis running parallel to the light propagation direction of light incident on the first reflection surface during the operation of the optical system.

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