-
公开(公告)号：US11362577B2
公开(公告)日：2022-06-14
申请号：US16828747
申请日：2020-03-24
IPC分类号： H02M1/08 , H02M3/158 , H03K17/081
摘要： A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.
-
公开(公告)号：US10461161B1
公开(公告)日：2019-10-29
申请号：US15878309
申请日：2018-01-23
发明人： Daniel Marvin Kinzer
IPC分类号： H01L29/40 , H01L29/778 , H01L29/20
摘要： A lateral transistor includes a source a gate and a drain connection to a transition layer within a semiconductor substrate. One or more capacitively coupled floating field plates are connected to the source connection such that the source voltage is uniformly distributed across the field plates.
-
公开(公告)号：US10044350B1
公开(公告)日：2018-08-07
申请号：US15700039
申请日：2017-09-08
发明人： Thomas Ribarich , Ju Zhang
IPC分类号： H02M7/217 , H03K17/082 , H03K17/691 , H03K17/06 , H03K9/08 , H03K17/62
摘要： A power drive circuit is disclosed. The power circuit includes: a pulse detector, configured to generate first and second control signals in response to first and second pulse signals, respectively. The power drive circuit also includes a state storage device, configured to generate first and second driver input signals in response to the first and second control signals, respectively. The power drive circuit also includes a driver configured to generate first and second gate drive signals in response to the first and second driver input signals, respectively. The power drive circuit also includes a power switch, configured to receive the first and second gate drive signals, where the first and second gate drive signals control the power switch to selectively conduct or not conduct current between first and second terminals.
-
公开(公告)号：US09859732B2
公开(公告)日：2018-01-02
申请号：US14667319
申请日：2015-03-24
发明人： Daniel M. Kinzer , Santosh Sharma , Ju Jason Zhang
IPC分类号： H02J7/00 , H02M1/088 , H02M3/158 , H03K3/012 , H01L29/20 , H03K17/10 , H03K19/0185 , H01L25/07 , H02M3/157 , H03K3/356 , H01L27/088 , H02M1/00
CPC分类号： H02J7/0052 , H01L23/528 , H01L25/072 , H01L27/088 , H01L27/0883 , H01L29/1033 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L2924/00 , H01L2924/0002 , H02M1/088 , H02M3/155 , H02M3/157 , H02M3/1584 , H02M3/1588 , H02M2001/0048 , H03K3/012 , H03K3/356017 , H03K17/102 , H03K19/018507 , Y02B70/1466 , Y02B70/1483
摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
-
公开(公告)号：US09640471B2
公开(公告)日：2017-05-02
申请号：US15050338
申请日：2016-02-22
发明人： Daniel M. Kinzer
CPC分类号： H01L23/49575 , H01L21/561 , H01L23/3107 , H01L23/3114 , H01L23/49503 , H01L23/49541 , H01L23/49548 , H01L23/49562 , H01L23/49589 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L25/0655 , H01L25/072 , H01L25/16 , H01L25/50 , H01L2224/04042 , H01L2224/05014 , H01L2224/05554 , H01L2224/0612 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/4814 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48479 , H01L2224/49113 , H01L2224/49175 , H01L2224/85051 , H01L2224/85186 , H01L2924/00014 , H01L2924/1033 , H01L2924/1304 , H01L2924/1306 , H01L2924/14 , H01L2924/1425 , H01L2924/1426 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H02M3/158 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599 , H01L2924/00
摘要： Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ “L” shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.
-
公开(公告)号：US09577530B1
公开(公告)日：2017-02-21
申请号：US15356425
申请日：2016-11-18
发明人： Tom Ribarich , Jason Zhang
CPC分类号： H02M3/158 , H02M3/1588 , H02M2001/0058 , Y02B70/1466 , Y02B70/1491
摘要： A power converter circuit is disclosed. The circuit includes a capacitor connected across first and second output terminals, an inductor configured to receive current from a power source, and a main switch configured to selectively conduct current from the inductor to a ground. The circuit also includes a diode configured to conduct current from the inductor to the capacitor, and a second switch connected in parallel with the diode, where the second switch is configured to selectively conduct current from the capacitor to the inductor.
摘要翻译： 公开了一种功率转换器电路。 电路包括连接在第一和第二输出端子之间的电容器，被配置为从电源接收电流的电感器和被配置为选择性地将电流从电感器导通到地的主开关。 电路还包括被配置为将电流从电感器传导到电容器的二极管，以及与二极管并联连接的第二开关，其中第二开关被配置为选择性地将电流从电容器传导到电感器。
-
公开(公告)号：US09570927B2
公开(公告)日：2017-02-14
申请号：US14728874
申请日：2015-06-02
发明人： Daniel M. Kinzer , Santosh Sharma , Ju Jason Zhang
IPC分类号： H03L5/00 , H02J7/00 , H02M1/088 , H02M3/158 , H03K3/012 , H01L29/20 , H03K17/10 , H03K19/0185 , H01L25/07 , H02M3/157 , H03K3/356 , H02M1/00
CPC分类号： H02J7/0052 , H01L23/528 , H01L25/072 , H01L27/088 , H01L27/0883 , H01L29/1033 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L2924/00 , H01L2924/0002 , H02M1/088 , H02M3/155 , H02M3/157 , H02M3/1584 , H02M3/1588 , H02M2001/0048 , H03K3/012 , H03K3/356017 , H03K17/102 , H03K19/018507 , Y02B70/1466 , Y02B70/1483
摘要： GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
摘要翻译： 基于GaN的半桥功率转换电路采用单片集成在与功率晶体管相同的器件上的控制，支持和逻辑功能。 在一些实施例中，低边GaN器件通过一个或多个电平移位电路与高侧GaN器件通信。 高侧和低侧设备都可以具有一个或多个集成的控制，支持和逻辑功能。 一些器件采用在基于GaN的器件中形成的静电放电电路和特征，以提高半桥功率转换电路的可靠性和性能。
-
公开(公告)号：US20160218623A1
公开(公告)日：2016-07-28
申请号：US15089249
申请日：2016-04-01
发明人： Ju Jason Zhang , Daniel M. Kinzer
CPC分类号： H02M3/158 , H02M1/44 , H02M3/335 , H02M3/33507 , H02M3/33569 , H02M2001/0058 , Y02B70/1491
摘要： A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.
-
公开(公告)号：US20160164346A1
公开(公告)日：2016-06-09
申请号：US15007132
申请日：2016-01-26
发明人： Ju Jason Zhang
摘要： A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).
摘要翻译： 无线电能传输电路的控制方案和架构采用两个固态开关和零电压开关（ZVS）拓扑来为天线网络供电。 开关以其谐振频率驱动天线网络，同时使具有低于天线电路的谐振频率的单独谐振电路通电。 谐振电路产生异相电压和电流波形，使开关能够（ZVS）工作。
-
公开(公告)号：US10811951B1
公开(公告)日：2020-10-20
申请号：US16748777
申请日：2020-01-21
IPC分类号： H02M1/08 , H03K3/356 , H03K17/081 , H02M1/36 , H02M3/158
摘要： A GaN driver circuit is disclosed. The circuit includes a low side switch causing the voltage at an output node to be a first voltage, a high side switch causing the voltage at the output node to be a second voltage in response to a control signal, and a high side switch driver circuit configured to cause the high side switch to apply the second voltage to the output node. The high side switch driver includes a pull-down switch configured to turn off the high side switch in response to an input signal, and a pass gate configured to cause the high side switch to apply the second voltage to the output node by causing the voltage of the control signal to become substantially equal to the second voltage plus a third voltage.
-
-
-
-
-
-
-
-
-
搜索结果
81 条记录 (耗时 0.016 秒)
