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    HIGH ELECTRON MOBILITY TRANSISTOR
    1.
    发明公开
    HIGH ELECTRON MOBILITY TRANSISTOR 审中-公开

    公开(公告)号：US20240234561A9

    公开(公告)日：2024-07-11

    申请号：US18096916

    申请日：2023-01-13

    申请人： National Yang Ming Chiao Tung University ,  National Chung-Shan Institute of Science and Technology

    发明人： Edward Yi CHANG ,  You-Chen WENG ,  Min-Lu KAO

    IPC分类号： H01L29/778 ,  H01L29/15 ,  H01L29/20

    CPC分类号： H01L29/7786 ,  H01L29/15 ,  H01L29/2003

    摘要： A high electron mobility transistor includes a growth substrate, a lattice matching layer, an back-barrier layer, an electron blocking layer, a channel layer, an active layer, a source, a gate, and a drain. The lattice matching layer and the back-barrier layer are formed on the growth substrate. The back-barrier layer includes GaN doped with C. The electron blocking layer is formed on the back-barrier layer. The electron blocking layer includes AlGaN, wherein the doping percent of Al atoms of the AlGaN is 3˜5% and the doping percent of Ga atoms of the AlGaN is 95˜97%. The electron blocking layer has a thickness of 2˜5 nm. The channel layer and the active layer are formed on the electron blocking layer. The source, the gate, and the drain are formed on the active layer.

    METHOD FOR PREPARING ALUMINUM NITRIDE POWDER BASED ON ALUMINUM METAL
    2.
    发明公开
    METHOD FOR PREPARING ALUMINUM NITRIDE POWDER BASED ON ALUMINUM METAL 审中-公开

    公开(公告)号：US20240199421A1

    公开(公告)日：2024-06-20

    申请号：US18081711

    申请日：2022-12-15

    申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： JIAN-LONG RUAN ,  CHENG-HUNG SHIH

    IPC分类号： C22C1/051

    CPC分类号： C22C1/051

    摘要： A method for preparing aluminum nitride powder, comprising: (A) providing an aluminum metal powder and a carbon source, and mixing the aluminum metal powder and the carbon source to form a mixed powder; (B) performing a medium-low-temperature nitriding reaction on the mixed powder to form a partially nitrided aluminum nitride powder containing an intermediate aluminum carbide phase; (C) subjecting the partially nitrided aluminum nitride powder to a high-temperature nitriding reaction to remove the intermediate aluminum carbide phase and form a fully nitrided aluminum nitride powder; and (D) decarbonizing the fully nitrided aluminum nitride powder in the atmosphere to form a high-purity aluminum nitride powder. Compared with the direct nitriding method of aluminum powder, although additionally introduces the carbon mixing and decarbonizing steps, the subsequent grinding steps can also be omitted, thereby avoiding the introduction of redundant impurities and improving the purity of the output aluminum nitride powder.

    METHOD OF STABILIZING TEMPERATURE SENSING IN THE PRESENCE OF TEMPERATURE-SENSING COMPONENT TEMPERATURE VARIATION
    6.
    发明公开
    METHOD OF STABILIZING TEMPERATURE SENSING IN THE PRESENCE OF TEMPERATURE-SENSING COMPONENT TEMPERATURE VARIATION 审中-公开

    公开(公告)号：US20230314238A1

    公开(公告)日：2023-10-05

    申请号：US17707997

    申请日：2022-03-30

    申请人： National Chung Shan Institute of Science and Technology

    发明人： SHIANG-FENG TANG ,  SHUN-LUNG YEN ,  KUO-JEN CHANG ,  HSIN-CHANG CHEN

    IPC分类号： G01K1/20 ,  G01J5/53 ,  G01K11/30

    CPC分类号： G01K1/20 ,  G01J5/53 ,  G01K11/30

    摘要： A method of stabilizing temperature sensing in presence of temperature-sensing component temperature variation includes steps of: obtaining response value caused by black body at first temperature of a thermal imager core chip; obtaining high-temperature first-order linear function of high-temperature black body response value versus thermal imager core chip temperature; obtaining low-temperature first-order linear function of low-temperature black body response value versus thermal imager core chip temperature; obtaining response value of high-temperature first-order linear function at first temperature, response value of high-temperature first-order linear function at second temperature of the thermal imager core chip, response value of low-temperature first-order linear function at first temperature, response value of low-temperature first-order linear function at second temperature, and response value of black body and substituting the five values into an equation for correcting the response values; and obtaining instant corrected value of the response value of the black body.

    METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD
    9.
    发明公开
    METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD 审中-公开

    公开(公告)号：US20230167579A1

    公开(公告)日：2023-06-01

    申请号：US17537521

    申请日：2021-11-30

    申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  CHIA-HUNG TAI

    IPC分类号： C30B23/06 ,  C30B29/36 ,  C30B35/00

    CPC分类号： C30B23/066 ,  C30B29/36 ,  C30B35/002

    摘要： Provided is a method of enhancing silicon carbide monocrystalline growth yield, including the steps of: (A) filling a bottom of a graphite crucible with a silicon carbide raw material selected; (B) performing configuration modification on a graphite seed crystal platform; (C) fastening a silicon carbide seed crystal to the modified graphite seed crystal platform with a graphite clamping accessory; (D) placing the graphite crucible containing the silicon carbide raw material and the silicon carbide seed crystal in an inductive high-temperature furnace; (E) performing silicon carbide crystal growth process by physical vapor transport; and (F) obtaining silicon carbide monocrystalline crystals. The geometric configuration of the surface of the graphite seed crystal platform is modified to eradicate development of peripheral grain boundary.