公开(公告)号：US20230167579A1

公开(公告)日：2023-06-01

申请号：US17537521

申请日：2021-11-30

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  CHIA-HUNG TAI

IPC分类号： C30B23/06 ,  C30B29/36 ,  C30B35/00

CPC分类号： C30B23/066 ,  C30B29/36 ,  C30B35/002

摘要： Provided is a method of enhancing silicon carbide monocrystalline growth yield, including the steps of: (A) filling a bottom of a graphite crucible with a silicon carbide raw material selected; (B) performing configuration modification on a graphite seed crystal platform; (C) fastening a silicon carbide seed crystal to the modified graphite seed crystal platform with a graphite clamping accessory; (D) placing the graphite crucible containing the silicon carbide raw material and the silicon carbide seed crystal in an inductive high-temperature furnace; (E) performing silicon carbide crystal growth process by physical vapor transport; and (F) obtaining silicon carbide monocrystalline crystals. The geometric configuration of the surface of the graphite seed crystal platform is modified to eradicate development of peripheral grain boundary.

公开(公告)号：US20220251725A1

公开(公告)日：2022-08-11

申请号：US17170896

申请日：2021-02-09

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO ,  CHIA-HUNG TAI

IPC分类号： C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

摘要： A method of growing on-axis silicon carbide single crystal includes the steps of (A) sieving a silicon carbide source material by size, and only the part that has a size larger than 1 cm is adopted for use as a sieved silicon carbide source material; (B) filling the sieved silicon carbide source material in the bottom of a graphite crucible; (C) positioning an on-axis silicon carbide on a top of the graphite crucible to serve as a seed crystal; (D) placing the graphite crucible having the sieved silicon carbide source material and the seed crystal received therein in an induction furnace for the physical vapor transport process; (E) starting a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.

公开(公告)号：US20190186043A1

公开(公告)日：2019-06-20

申请号：US15913980

申请日：2018-03-07

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： DAI-LIANG MA ,  TSAO-CHUN PENG ,  CHENG-JUNG KO ,  BANG-YING YU ,  CHIH-WEI KUO ,  YING-CONG ZHAO

IPC分类号： C30B29/36 ,  C30B29/40 ,  H01L21/324

CPC分类号： C30B29/36 ,  C30B29/403 ,  H01L21/324

摘要： A device for measuring distribution of thermal field in a crucible comprises a crucible comprising an upper lid, a body, a growth chamber and a material source zone; a thermally insulating material disposed outside the crucible; a movable heating component for heating the crucible; a plurality of thermocouples enclosed by insulating, high temperature resistant material and disposed in the crucible after being inserted into a plurality of holes on the upper lid to measure distribution of thermal field in the crucible. The thermocouples enclosed by insulating, high temperature resistant material are effective in measuring and adjusting temperature distribution in the crucible to achieve optimal temperature distribution for crystal growth in the crucible.

公开(公告)号：US20240239712A1

公开(公告)日：2024-07-18

申请号：US18096568

申请日：2023-01-13

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHIH-HSING WANG ,  CHENG-JUNG KO ,  CHUEN-MING GEE ,  CHIH-WEI KUO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO

IPC分类号： C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/645

CPC分类号： C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C30B35/002

摘要： A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

公开(公告)号：US20230227998A1

公开(公告)日：2023-07-20

申请号：US17579604

申请日：2022-01-20

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： HSUEH-I CHEN ,  CHENG-JUNG KO ,  CHIH-WEI KUO ,  JUN-BIN HUANG ,  CHIA-HUNG TAI

IPC分类号： C30B29/36 ,  H01L21/205 ,  H01L21/02

CPC分类号： C30B29/36 ,  H01L21/205 ,  H01L21/02167 ,  H01L21/02656

摘要： Provides a method for adjusting a thermal field of silicon carbide single crystal growth, and steps comprise: (A) screening a silicon carbide source, and filling into a bottom of a graphite crucible; (B) placing a guide inside the graphite crucible; (C) placing a rigid heat conductive material on the guide, so that a gap between the guide and a crucible wall of the graphite crucible is reduced; (D) fixing a seed crystal on a top of the graphite crucible; (E) placing the graphite crucible equipped with the silicon carbide source and the seed crystal in an induction high-temperature furnace used by physical vapor transport method; (F) performing a silicon carbide crystal growth process; and (G) obtaining a silicon carbide single crystal.

公开(公告)号：US20180057925A1

公开(公告)日：2018-03-01

申请号：US15353000

申请日：2016-11-16

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： DAI-LIANG MA ,  HSUEH-I CHEN ,  BO-CHENG LIN ,  CHENG-JUNG KO ,  YING-CONG ZHAO ,  CHIH-WEI KUO ,  SHU-YU YEH

IPC分类号： C23C14/24 ,  C30B23/02 ,  C30B23/06 ,  C30B29/36 ,  C30B29/40 ,  C23C14/06 ,  C23C14/26

CPC分类号： C23C14/243 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/26 ,  C30B23/00 ,  C30B23/002 ,  C30B23/025 ,  C30B23/06 ,  C30B23/066 ,  C30B29/36 ,  C30B29/403

摘要： A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.