公开(公告)号：US20220251725A1

公开(公告)日：2022-08-11

申请号：US17170896

申请日：2021-02-09

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO ,  CHIA-HUNG TAI

IPC: C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A method of growing on-axis silicon carbide single crystal includes the steps of (A) sieving a silicon carbide source material by size, and only the part that has a size larger than 1 cm is adopted for use as a sieved silicon carbide source material; (B) filling the sieved silicon carbide source material in the bottom of a graphite crucible; (C) positioning an on-axis silicon carbide on a top of the graphite crucible to serve as a seed crystal; (D) placing the graphite crucible having the sieved silicon carbide source material and the seed crystal received therein in an induction furnace for the physical vapor transport process; (E) starting a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.

公开(公告)号：US20240239712A1

公开(公告)日：2024-07-18

申请号：US18096568

申请日：2023-01-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHIH-HSING WANG ,  CHENG-JUNG KO ,  CHUEN-MING GEE ,  CHIH-WEI KUO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO

IPC: C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/645

CPC classification number: C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C30B35/002

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.