公开(公告)号：US20240363742A1

公开(公告)日：2024-10-31

申请号：US18309320

申请日：2023-04-28

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Debdas Pal ,  Parshant Kumar ,  Stephen Bilotta ,  Timothy E. Boles

IPC分类号： H01L29/737 ,  H01L29/06

CPC分类号： H01L29/737 ,  H01L29/0619

摘要： The reduction of feedback capacitance in active semiconductor devices, such as the reduction in collector to base capacitance in transistors, is described. In one example, a transistor includes a substrate, an active region of the transistor in the substrate, a dielectric layer over a top surface of the substrate, and an interconnect region. The active region includes a base contact over the active region. The interconnect region includes a conductive interconnect that extends over the dielectric layer and is electrically coupled with the base contact. The interconnect region also includes a semiconductor junction region extending under the conductive interconnect in an area of the substrate outside of the active region. The addition of the semiconductor junction region under the conductive interconnect reduces the total collector to base capacitance in the transistor.

公开(公告)号：US12100630B2

公开(公告)日：2024-09-24

申请号：US17097294

申请日：2020-11-13

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Marvin Marbell ,  Melvin Nava ,  Jeremy Fisher ,  Alexander Komposch

IPC分类号： H01L23/047 ,  H01L21/48 ,  H01L23/66

CPC分类号： H01L23/047 ,  H01L21/4817 ,  H01L23/66 ,  H01L2223/6611 ,  H01L2223/6655

摘要： A radio frequency (RF) transistor amplifier includes a package submount. a package frame comprising an electrically insulating member and one or more conductive layers on the package submount and exposing a surface thereof, a transistor die on the surface of the package submount and comprising respective terminals that are electrically connected to the package frame, a protective member covering the transistor die, and one or more electrical components that are attached to the package frame outside the protective member. Related RF power device packages and fabrication methods are also discussed.

公开(公告)号：US12082342B2

公开(公告)日：2024-09-03

申请号：US17807037

申请日：2022-06-15

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Rathnait Long ,  Richard Allen Cory ,  Gerald Comtois ,  Scott Donahue

IPC分类号： H05K1/18 ,  H05K1/02

CPC分类号： H05K1/184 ,  H05K1/0224 ,  H05K2201/09227 ,  H05K2201/10984

摘要： Examples of printed circuit boards (PCBs) with board configuration blocks and board edge projections are described. In one example, a PCB includes a core material and a metal layer comprising a plurality of metal traces on the core material. The plurality of metal traces can include component interconnect traces and a board configuration block. The board configuration block can include a plan diagram for the PCB, an operational diagram for the PCB, or a combination of plan and operational diagrams. In other examples, a PCB can include a core material having a peripheral edge. The peripheral edge can include one or more board edge scheme projections positioned within projection edge regions of the peripheral edge. The scheme projections have a projection shape based on operational characteristics for the PCB. In some cases, the board configuration blocks can be located on the board edge scheme projections.

公开(公告)号：US12074123B2

公开(公告)日：2024-08-27

申请号：US17031745

申请日：2020-09-24

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Richard Wilson ,  Madhu Chidurala

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L23/498 ,  H01L25/18

CPC分类号： H01L23/66 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/08 ,  H01L24/48 ,  H01L25/18 ,  H01L2223/6672 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/16145 ,  H01L2224/48137 ,  H01L2224/48157

摘要： A multi-level radio frequency (RF) integrated circuit component includes an upper level including at least one inductor, and a lower level including at least one conductive element that provides electrical connection to the at least one inductor. The lower level separates the at least one inductor from a lower surface that is configured to be attached to a conductive pad. Related integrated circuit device packages are also discussed.

公开(公告)号：US20240283122A1

公开(公告)日：2024-08-22

申请号：US18649368

申请日：2024-04-29

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Andrzej Rozbicki ,  Paul Hogan ,  Gary Pepelis ,  Scott Donahue

IPC分类号： H01P5/08 ,  H01P5/02

CPC分类号： H01P5/085 ,  H01P5/028

摘要： Aspects of coaxial to microstrip transitional housings are described. A method of forming a transitional housing includes forming a channel to a first depth into a housing block from a top surface of the housing block, forming a first annular opening to a second depth into the housing block from the top surface of the housing block at a first end of the channel, forming a second annular opening to the second depth into the housing block from the top surface of the housing block at a second end of the channel, inserting a first cylindrical plug into the first annular opening, and inserting a second cylindrical plug into the second annular opening. The second depth can be greater than the first depth in some cases.

公开(公告)号：US20240235501A9

公开(公告)日：2024-07-11

申请号：US18048225

申请日：2022-10-20

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Duy P. Nguyen ,  Nguyen L.K. Nguyen ,  Thanh T. Pham ,  Trong Phan ,  Stefano D'Agostino ,  Wayne Kennan

IPC分类号： H03F3/45 ,  H03G3/30

CPC分类号： H03F3/4508 ,  H03G3/30 ,  H03F2200/447 ,  H03F2200/468 ,  H03G2201/103

摘要： Amplifiers with temperature-adaptive gain and peaking gain control are described. In one example, a temperature-adaptive amplifier includes an amplifier, a temperature sense circuit, and a peaking control level shifter to bias shift the output of the amplifier and adjust a peaking gain of the amplifier based on the temperature control signal. The peaking control level shifter can adjust a peaking gain of the amplifier based on the temperature control signal. The temperature-adaptive control can help to compensate for peaking gain in amplifiers based on the operating temperature of the amplifier. The control can help to compensate for unwanted changes in amplifier peaking gain, over time, resulting in more consistent peaking gain over the full operating frequency range of amplifiers.

公开(公告)号：US12021038B2

公开(公告)日：2024-06-25

申请号：US17345086

申请日：2021-06-11

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Margaret Barter ,  Timothy Boles

IPC分类号： H01L23/544 ,  H01L21/48 ,  H01L21/67 ,  H01L23/488

CPC分类号： H01L23/544 ,  H01L21/4814 ,  H01L21/67282 ,  H01L23/488 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/54433

摘要： A technique for marking semiconductor devices with an identifiable mark or alphanumeric text yields a high-contrast, easily distinguishable mark on an electrical terminal of the device without impacting the device's breakdown voltage capability and without compromising the solderability and wire bondability of the terminal. This approach deposits the mark on the terminal as a patterned layer of palladium, which offers good contrast with the base metal of the terminal and maintains the solderability and bondability of the terminal.

公开(公告)号：US20240204382A1

公开(公告)日：2024-06-20

申请号：US18082647

申请日：2022-12-16

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Nguyen Nguyen ,  Trong Phan ,  Duy Nguyen ,  Thanh Pham ,  Stefano D'Agostino ,  Wayne Kennan ,  William Allen

IPC分类号： H01P1/00 ,  H01P3/08 ,  H01P11/00

CPC分类号： H01P1/00 ,  H01P3/081 ,  H01P11/003

摘要： An enhanced electrical circuit can employ conductive fill components that can facilitate providing desirable resistive stabilization of the electrical circuit and other desirable circuit qualities without having to use a physical resistor. The electrical circuit can comprise a transmission line, which can be a microstrip line, that can have defined dimensions. The electrical circuit can comprise respective conductive fill components that can be in proximity to desired sides of the transmission line, wherein the respective conductive fill components can provide the desired resistive stabilization for the electrical circuit. The respective conductive fill components can be separated from, and not in contact with, each other based on respective gaps of a defined size(s) between respective adjacent conductive fill components. The respective conductive fill components can be across a single layer or multiple layers of conductive fill components.

公开(公告)号：US12015075B2

公开(公告)日：2024-06-18

申请号：US17325628

申请日：2021-05-20

申请人： Wolfspeed, Inc.

发明人： Kyle Bothe ,  Joshua Bisges

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/324 ,  H01L21/76 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/30612 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/7786 ,  H01L21/02252 ,  H01L21/26546 ,  H01L21/3245

摘要： A method of forming a high electron mobility transistor (HEMT) includes: providing a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate; forming a first insulating layer on the barrier layer; and forming a gate contact, a source contact, and a drain contact on the barrier layer. An interface between the first insulating layer and the barrier layer comprises a modified interface region on a drain access region and/or a source access region of the semiconductor structure such that a sheet resistance of the drain access region and/or the source access region is between 300 and 400 Ω/sq.

公开(公告)号：US20240194750A1

公开(公告)日：2024-06-13

申请号：US18582153

申请日：2024-02-20

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Shamit Som ,  Wayne Mack Struble ,  Jason Matthew Barrett ,  Nishant R. Yamujala ,  John Stephen Atherton

IPC分类号： H01L29/417 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778

CPC分类号： H01L29/41758 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

摘要： An example field effect transistor includes a substrate, a first source metal over the substrate, a second source metal over the substrate, and a drain metal positioned between the first source metal and the second source metal over a channel of the field effect transistor. The drain metal includes a drain metal body having a notched region between the first source metal and the second source metal over the channel, and the notched region defines a first projecting portion and a second projecting portion of the drain metal body. In one aspect, the first projecting portion and the second projecting portion are positioned on respective sides of the notched region. The notched region is a triangular-shaped notched region in one example.