Abstract:
A transparent, polycrystalline ceramic is described. The ceramic comprises crystallites of the formula AxCuByDvEzFw, whereby A and C are selected from the group consisting of Li+, Na+, Be2+, Mg2+, Ca2+, Sr2+, Ba2+, Al3+, Ga3+, In3+, C4+, Si4+, Ge4+, Sn2+/4+, Sc3+, Ti4+, Zn2+, Zr4+, Mo6+, Ru4+, Pd2+, Ag2+, Cd2+, Hf4+, W4+/6+, Re4+, Os4+, Ir4+, Pt2+/4+, Hg2+ and mixtures thereof, B and D are selected from the group consisting of Li+, Na+, K+, Mg2+, Al3+, Ga3+, In3+, Si4+, Ge4+, Sn4+, Sc3+, Ti4+, Zn2+, Y3+, Zr4+, Nb3+, Ru3+, Rh3+, La3+, Lu3+, Gd3+ and mixtures thereof, E and F are selected mainly from the group consisting of the divalent anions of S, Se and O and mixtures thereof, x, u, y, v, z and w satisfy the following formulae 0.125
Abstract:
A transparent, polycrystalline ceramic is described. The ceramic comprises crystallites of the formula AxCuByDvEzFw, whereby A and C are selected from the group consisting of Li+, Na+, Be2+, Mg2+, Ca2+, Sr2+, Ba2+, Al3+, Ga3+, In3+, C4+, Si4+, Ge4+, Sn2+/4+, Sc3+, Ti4+, Zn2+, Zr4+, Mo6+, Ru4+, Pd2+, Ag2+, Cd2+, Hf4+W4+/6+, Re4+, Os4+, Ir4+,, Pt2+/4+, Hg2+ and mixtures thereof, B and D are selected from the group consisting of Li+, Na+, K+, Mg2+, Al3+, Ga3+, In3+, Si4+, Ge4+, Sn4+, Sc3+, Ti4+, Zn2+, Y3+, Zr4+, Nb3+, Ru3+, Rh3+, La3+, Lu3+, Gd3+ and mixtures thereof, E and F are selected mainly from the group consisting of the divalent anions of S, Se and O and mixtures thereof, x, u, y, v, z and w satisfy the following formulae 0.125
Abstract:
A transparent, polycrystalline ceramic is described. The ceramic comprises crystallites of the formula AxCuByDvEzFw, whereby A and C are selected from the group consisting of Li+, Na+, Be2+, Mg2+, Ca2+, Sr2+, Ba2+, Al3+, Ga3+, In3+, C4+, Si4+, Ge4+, Sn2+/4+, Sc3+, Ti4+, Zn2+, Zr4+, Mo6+, Ru4+, Pd2+, Ag2+, Cd2+, Hf4+, W4+/6+, Re4+, Os4+, Ir4+, Pt2+/4+, Hg2+ and mixtures thereof, B and D are selected from the group consisting of Li+, Na+, K+, Mg2+, Al3+, Ga3+, In3+, Si4+, Ge4+, Sn4+, Sc3+, Ti4+, Zn2+, Y3+, Zr4+, Nb3+, Ru3+, Rh3+, La3+, Lu3+, Gd3+ and mixtures thereof, E and F are selected mainly from the group consisting of the divalent anions of S, Se and O and mixtures thereof, x, u, y, v, z and w satisfy the following formulae 0.125
Abstract:
A method of preparing a textured glass ceramic is disclosed which comprises the steps of preparing a precursor glass, preparing a precursor glass body, placing the precursor glass body in a furnace in contact with a brick body having a larger or smaller thermal capacity than formed by the precursor glass body, and ceraming the precursor glass body within the furnace in contact with the brick body thereby effecting a temperature gradient across the precursor glass body for precipitating crystallites having a preferred direction of orientation.
Abstract:
A method of selecting poling parameters for poling a glass ceramic body comprising ferroelectric domains, by applying an electric field across the glass ceramic body at a certain poling temperature for a certain poling time comprises the steps of: determining an upper bound of poling temperature given by the maximum poling temperature at which uncontrolled heat-up (thermal runaway) is avoided; and selecting the poling temperature to be smaller than the upper bound, preferably close to the upper bound.
Abstract:
The invention relates to a color effect layer system, including: a carrier substrate selected from glass or glass-ceramics, at least one layer of spheres, particularly preferred at least 50 layers, more preferred 50 to 100 layers, including filled or not filled cavities/honeycombs, in the form of a porous material composite of a crystal-like superstructure or an inverse crystal-like superstructure having a three-dimensional periodic or substantially periodic configuration in the order of magnitude of the wavelength of visible light, wherein the sphere diameters and optionally the cavity/honeycomb diameters have a very strict distribution. In addition to the excellent optical properties, the coating systems also have sufficient mechanical stability.
Abstract:
A method for making a substrate wafer for a low-defect semiconductor component is described. In this method a single crystal having a [0001] surface perpendicular to a c-axis thereof is formed, subdivided into thin disks each with at least one disk surface to be coated, the at least one disk surface is smoothed and the thin disks are tempered at a temperature above 1770 K. Preferably the tempering occurs for at least 10 minutes at temperatures greater than 1770 K in a dust-poor atmosphere with a reduced oxygen partial pressure. Al2O3 is a preferred material for the single crystal.
Abstract translation:描述了制造用于低缺陷半导体部件的衬底晶片的方法。 在该方法中,形成具有垂直于其c轴的[0001]表面的单晶,细分成具有至少一个待涂覆的盘表面的薄盘,至少一个盘表面被平滑,并且薄盘是 在高于1770K的温度下回火。优选地,在具有降低的氧分压的无尘气氛中,大于1770K的温度下回火至少10分钟。 Al 2 O 3是用于单晶的优选材料。
Abstract:
The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm2, preferably less than 100 pit/cm2. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cm2 and moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.
Abstract translation:电子半导体部件具有具有有源面的晶片基板和涂覆有源面的半导体层。 为了使半导体层具有几个表面缺陷,晶片衬底是蓝宝石或碳化硅单晶,并且活性表面的凹坑密度小于500凹坑/ cm 2,优选小于100 凹坑/ cm 2。 用于获得具有这些凹坑密度的活性表面的抛光方法包括用抛光剂如硅悬浮液和抛光工具进行抛光,抛光工具以优选0.05-0.2kg / cm 2的压力压在活性表面上, SUP> 2并且在抛光期间在360°角度上统计均匀地分布抛光运动而在有源表面上移动。
Abstract:
A translucent piezoelectric glass ceramic is disclosed. The glass ceramic is prepared from a precursor glass by a ceraming process, using a temperature gradient to effect the precipitation of non-ferroelectric piezo-active crystallites from the precursor glass with a preferred direction of orientation and having an average crystal size of less than 1 micrometer. Alternatively, a translucent piezoelectric glass ceramic comprising ferroelectric crystallites may be prepared by poling. In this case the crystal size is controlled to be smaller than 90 nanometers but preferably larger than 10 nanometers.
Abstract:
A translucent piezoelectric glass ceramic is disclosed. The glass ceramic is prepared from a precursor glass by a ceraming process, using a temperature gradient to effect the precipitation of non-ferroelectric piezo-active crystallites from the precursor glass with a preferred direction of orientation and having an average crystal size of less than 1 micrometer. Alternatively, a translucent piezoelectric glass ceramic comprising ferroelectric crystallites may be prepared by poling. In this case the crystal size is controlled to be smaller than 90 nanometers but preferably larger than 10 nanometers.