公开(公告)号：US20050193942A1

公开(公告)日：2005-09-08

申请号：US11069117

申请日：2005-03-01

Applicant: Claudio Gorgoni ,  Burkhardt Speit ,  Ingo Koehler ,  Jaques Guinchard ,  Peter Blaum ,  Wolfram Beier

Inventor： Claudio Gorgoni ,  Burkhardt Speit ,  Ingo Koehler ,  Jaques Guinchard ,  Peter Blaum ,  Wolfram Beier

IPC: B28D5/00 ,  C30B29/20 ,  C30B33/00 ,  C30B33/02 ,  H01L21/20 ,  C30B1/00 ,  C30B15/00

CPC classification number: C30B29/20 ,  C30B33/02

Abstract: A method for making a substrate wafer for a low-defect semiconductor component is described. In this method a single crystal having a [0001] surface perpendicular to a c-axis thereof is formed, subdivided into thin disks each with at least one disk surface to be coated, the at least one disk surface is smoothed and the thin disks are tempered at a temperature above 1770 K. Preferably the tempering occurs for at least 10 minutes at temperatures greater than 1770 K in a dust-poor atmosphere with a reduced oxygen partial pressure. Al2O3 is a preferred material for the single crystal.

Abstract translation: 描述了制造用于低缺陷半导体部件的衬底晶片的方法。 在该方法中，形成具有垂直于其c轴的[0001]表面的单晶，细分成具有至少一个待涂覆的盘表面的薄盘，至少一个盘表面被平滑，并且薄盘是 在高于1770K的温度下回火。优选地，在具有降低的氧分压的无尘气氛中，大于1770K的温度下回火至少10分钟。 Al 2 O 3是用于单晶的优选材料。