公开(公告)号：US20090195941A1

公开(公告)日：2009-08-06

申请号：US12012667

申请日：2008-02-05

Applicant: Yuchen Zhou ,  Yimin Guo

Inventor： Yuchen Zhou ,  Yimin Guo

IPC: G11B5/127

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/091 ,  G11B5/3906 ,  G11B5/3925 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/325 ,  H01F10/3254 ,  H01F41/302

Abstract: A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. This side pattern absorbs external field flux, concentrating it to flow into the sensor's edges to promote larger MR sensor magnetization rotation.

Abstract translation: 描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。 传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。 该侧面图吸收外部磁场通量，将其集中流入传感器的边缘，以促进较大的MR传感器磁化旋转。

公开(公告)号：US09656271B2

公开(公告)日：2017-05-23

申请号：US11999171

申请日：2007-12-04

Applicant: Yuchen Zhou ,  Yimin Guo

Inventor： Yuchen Zhou ,  Yimin Guo

IPC: G01N1/36 ,  B03C1/033 ,  B03C1/034 ,  B03C1/28

CPC classification number: B03C1/033 ,  B03C1/034 ,  B03C1/288 ,  B03C2201/18 ,  B03C2201/26

Abstract: Presented herein is a method and devices for identifying biological molecules and cells labeled by small magnetic particles and by optically active dyes. The labeled molecules are typically presented in a biological fluid but are then magnetically guided into narrow channels by a sequential process of magnetically trapping and releasing the magnetic labels that is implemented by sequential synchronized reversing the magnetic fields of a regular array of patterned magnetic devices that exert forces on the magnetic particles. These devices, which may be bonded to a substrate, can be formed as parallel magnetic strips adjacent to current carrying lines or can be substantially of identical structure to trilayered MTJ cells. Once the magnetically labeled molecules have been guided into the appropriate channels, their optical labels can be detected by a process of optical excitation and de-excitation. The molecules are thereby identified and counted.

公开(公告)号：US08711524B2

公开(公告)日：2014-04-29

申请号：US12012667

申请日：2008-02-05

Applicant: Yuchen Zhou ,  Yimin Guo

Inventor： Yuchen Zhou ,  Yimin Guo

IPC: G11B5/33

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/091 ,  G11B5/3906 ,  G11B5/3925 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/325 ,  H01F10/3254 ,  H01F41/302

Abstract: A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. This side pattern absorbs external field flux, concentrating it to flow into the sensor's edges to promote larger MR sensor magnetization rotation.

Abstract translation: 描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。 传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。 该侧面图吸收外部磁场通量，将其集中流入传感器的边缘，以促进较大的MR传感器磁化旋转。

公开(公告)号：US20090139908A1

公开(公告)日：2009-06-04

申请号：US11999171

申请日：2007-12-04

Applicant: Yuchen Zhou ,  Yimin Guo

Inventor： Yuchen Zhou ,  Yimin Guo

IPC: B03C1/02

CPC classification number: B03C1/033 ,  B03C1/034 ,  B03C1/288 ,  B03C2201/18 ,  B03C2201/26

Abstract: Presented herein is a method and devices for identifying biological molecules and cells labeled by small magnetic particles and by optically active dyes. The labeled molecules are typically presented in a biological fluid but are then magnetically guided into narrow channels by a sequential process of magnetically trapping and releasing the magnetic labels that is implemented by sequential synchronized reversing the magnetic fields of a regular array of patterned magnetic devices that exert forces on the magnetic particles. These devices, which may be bonded to a substrate, can be formed as parallel magnetic strips adjacent to current carrying lines or can be substantially of identical structure to trilayered MTJ cells. Once the magnetically labeled molecules have been guided into the appropriate channels, their optical labels can be detected by a process of optical excitation and de-excitation. The molecules are thereby identified and counted.

Abstract translation: 本文提出的是用于鉴定由小磁性颗粒和光学活性染料标记的生物分子和细胞的方法和装置。 标记的分子通常呈现在生物流体中，然后通过磁捕获和释放磁性标签的顺序过程被磁性引导到窄通道中，磁性标记通过顺序同步反转正在施加的图案化磁性装置的规则阵列的磁场来实现 对磁性颗粒的力。 这些可以结合到衬底的器件可以形成为与载流线相邻的平行磁条，或者可以与三层MTJ电池基本上具有相同的结构。 一旦磁标记的分子被引导到适当的通道中，它们的光学标记可以通过光学激发和去激发的过程来检测。 因此鉴定和计数分子。

公开(公告)号：US20220278270A1

公开(公告)日：2022-09-01

申请号：US17187864

申请日：2021-02-28

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16

Abstract: A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction. Further, there is provided a toggle writing method of the perpendicular magnetoresistive element comprises: applying a first write pulse having a first voltage magnitude and a first pulse width to reverse the adjacent-bias layer magnetization direction to be anti-parallel to the free layer magnetization direction by spin-transfer-torque effect, and applying a second write pulse having a second voltage magnitude and a second pulse width to reverse the free layer magnetization direction to be parallel to the adjacent-bias layer magnetization direction by voltage-controlled magnetic anisotropy effect under the magnetic dipole bias field from the adjacent-bias layer.

公开(公告)号：US10937958B2

公开(公告)日：2021-03-02

申请号：US16686081

申请日：2019-11-15

Applicant: Yimin Guo

Inventor： Yimin Guo

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/14 ,  H01L43/06

Abstract: A method of forming a magnetoresistive element comprises of forming a novel Boron-absorbing cap layer provided on the top surface of an amorphous CoFeB (or CoB, FeB) ferromagnetic recording layer. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the novel Boron-absorbing cap layer. Removing the top portion of the Boron-absorbing cap layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin thermally stable portion of cap layer is remained on top of the recording layer with low damping constant. Accordingly, a reduced write current is achieved for spin-transfer torque MRAM application.

公开(公告)号：US10672977B2

公开(公告)日：2020-06-02

申请号：US14063204

申请日：2013-10-25

Applicant: Yimin Guo

Inventor： Yimin Guo

IPC: H01L43/10 ,  H01L43/08

Abstract: A perpendicular magnetoresistive element includes a novel recording layer being a multi-layer comprising a first Co-alloy layer including at least one of CoFeB, CoFeB/CoFe and CoFe/CoFeB, a second Co-alloy layer including at least one of CoFeB and CoB, an insertion layer provided between the first Co-alloy layer and the second Co-alloy layer and containing at least one element selected from Zr, Nb, W, Mo, Ru and having a thickness less than 0.5 nm, and a novel buffer layer having rocksalt crystal structure(s) interfacing to the recording layer with lattice parameter mismatch between 3% and 18%. The magnetoresistive element is annealed at an elevated temperature and both the first Co-alloy layer and the second Co-alloy layer are crystallized to form body-center cubic (bcc) CoFe or bcc Co grain having epitaxial growth with (100) plane parallel to substrate and with in-plane expansion and out-of-plane contraction.

公开(公告)号：US20160225982A1

公开(公告)日：2016-08-04

申请号：US14611083

申请日：2015-01-30

Applicant: Yimin Guo

Inventor： Yimin Guo

IPC: H01L43/14 ,  H01L27/22 ,  H01L43/06 ,  H01L43/04 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08 ,  H01L43/12

Abstract: A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

Abstract translation: 自旋转移 - 转矩磁阻存储器包括制造具有高导电性底部电极的三端子磁阻存储元件的装置和方法，其覆盖在MTJ堆叠外的区域中的SHE-金属层的顶部。 存储单元包括位于与多个磁阻存储元件中选定的磁阻存储元件相邻的位线，以在磁阻元件堆叠上提供读取电流，并且两个高度导电的底部电极重叠并电接触外部的SHE-金属层的顶部 并提供双向旋转霍尔效应记录电流，并因此切换记录层的磁化。 因此，通过施加低写入电流，记录层的磁化可以容易地根据沿着SHE-金属层的电流的方向切换或反向。

公开(公告)号：US09087983B2

公开(公告)日：2015-07-21

申请号：US14188699

申请日：2014-02-25

Applicant: Yimin Guo

Inventor： Yimin Guo

IPC: G11C11/00 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228

Abstract: A STT-MRAM comprises apparatus and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of a three-terminal magnetoresistive memory element having a voltage-gated recording. A bit line is coupled to the memory element through an upper electrode provided on the top surface of a reference layer, a select CMOS is coupled to the recording layer of the memory element through a middle second electrode and a VIA and a digital line is coupled to a voltage gate which is insulated from the recording layer by a dielectric layer and is used to adjust the switching write current. The fabrication includes formation of bottom digital line, formation of memory cell & VIA connection, formation of top bit line. Dual photolithography patterning and hard mask etch are used to form a small memory pillar. Ion implantation is used to convert a buried dielectric VIA into an electrical conducting path between middle memory cell and underneath CMOS device.

Abstract translation: STT-MRAM包括制造自旋转矩磁阻存储器的装置和方法以及具有电压门控记录的多个三端子磁阻存储元件。 位线通过设置在参考层的顶表面上的上电极耦合到存储器元件，选择CMOS通过中间第二电极和VIA耦合到存储元件的记录层，数字线耦合 通过电介质层与记录层绝缘的电压门，并用于调节开关写入电流。 该制造包括形成底部数字线，形成存储单元和VIA连接，形成顶部位线。 双光刻图案和硬掩模蚀刻用于形成小的记忆柱。 离子注入用于将埋入的电介质VIA转换成中间存储器单元和CMOS器件之下的导电路径。

公开(公告)号：US09054301B2

公开(公告)日：2015-06-09

申请号：US14251576

申请日：2014-04-12

Applicant: Yimin Guo

Inventor： Yimin Guo

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: A method to make magnetic random access memory (MRAM), or integrated device in general, is provided. Oxygen ion implantation is used to convert the photolithography exposed areas into metal oxide dielectric matrix. To confine the oxygen ions within the desired region, heavy metals with large atomic number, such as Hf, Ta, W, Re, Os, Ir, Pt, Au is used as ion mask and bottom ion-stopping layer. An oxygen gettering material, selected from Mg, Zr, Y, Th, Ti, Al, Ba is added above and below the active device region to effectively capture the impinging oxygen. After a high temperature anneal, a buried metal oxide layer with sharp oxygen boundaries across the active device region can be obtained.

Abstract translation: 提供了一种制造磁性随机存取存储器（MRAM）或一般的集成器件的方法。 氧离子注入用于将光刻曝光区域转换为金属氧化物介质基质。 为了将氧离子限制在所需区域内，使用原子序数大的重金属如Hf，Ta，W，Re，Os，Ir，Pt，Au作为离子掩模和底部离子停止层。 选自Mg，Zr，Y，Th，Ti，Al，Ba的吸氧材料加入到有源器件区域上方和下方，以有效捕获入射氧。 在高温退火之后，可以获得在有源器件区域上具有尖锐氧边界的掩埋金属氧化物层。